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Description : NPN Silicon General Purpose Amplifier Transistor

NPN Silicon General Purpose Amplifier Transistor

This NPN transistor is designed for General Purpose Amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium.

Features
• Reduces Board Space
• High hFE, 210−460 (typical)
• Low VCE(sat), < 0.5 V
• ESD Performance: Human Body Model;  2000 V,
                                 Machine Model;  200 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
• These are Pb−Free Devices

Part Name(s) : 2SC4617 C4617
Motorola
Motorola => Freescale
Description : NPN General Purpose Amplifier TRANSISTORS SURFACE MOUNT

NPN Silicon General Purpose Amplifier Transistor

This NPN transistor is designed for General Purpose Amplifier applications.
This device is housed in the SOT-416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium.

• Reduces Board Space
• High hFE, 210–460 (typical)
• Low VCE(sat), < 0.5 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel

Description : NPN Silicon General Purpose Amplifier Transistor

NPN Silicon General Purpose Amplifier Transistor

This NPN transistor is designed for General Purpose Amplifier applications. This device is housed in the SC−75/SOT-416 package which is designed for low power surface mount applications, where board space is at a premium.

Features
• Reduces Board Space
• High hFE, 210−460 (typical)
• Low VCE(sat), < 0.5 V
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
   Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant*

Part Name(s) : FTC5658
FS
First Silicon Co., Ltd
Description : NPN Silicon General Purpose Amplifier Transistor

NPN Silicon General Purpose Amplifier Transistor

This NPN transistor is designed for General Purpose Amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium.

Features
• Reduces Board Space
• High hFE, 210−460 (typical)
• Low VCE(sat) < 0.5 V
• ESD Performance: Human Body Model; > 2000 V,
                                 Machine Model; > 200 V

Part Name(s) : 2SC5658M3T5G
VAISH
Vaishali Semiconductor
Description : NPN Silicon General Purpose Amplifier Transistor

NPN Silicon General Purpose Amplifier Transistor

This NPN transistor is designed for General Purpose Amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium.

• Reduces Board Space
• High hFE, 210−460 (typical)
• Low VCE(sat), < 0.5 V
• ESD Performance: Human Body Model; > 2000 V,
                                 Machine Model; > 200 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
• This is a Pb−Free Device

LRC
Leshan Radio Company,Ltd
Description : NPN Silicon General Purpose Amplifier Transistor

NPN Silicon General Purpose Amplifier Transistor

This NPN transistor is designed for General Purpose Amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium.

Features
• Reduces Board Space
• High hFE, 210−460 (typical)
• Low VCE(sat), < 0.5 V
• ESD Performance: Human Body Model; > 2000 V,
                                 Machine Model; > 200 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
• These are Pb−Free Devices

Part Name(s) : EMX2DXV6T5 EMX2DXV6T5G
ON-Semiconductor
ON Semiconductor
Description : Dual NPN General Purpose Amplifier Transistor

Dual NPN General Purpose Amplifier Transistor

This NPN transistor is designed for General Purpose Amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.

Features
• Reduces Board Space
• High hFE, 210−460 (Typical)
• Low VCE(sat), < 0.5 V
• These are Pb−Free Devices

Description : Dual NPN General Purpose Amplifier Transistor

Dual NPN General Purpose Amplifier Transistor

This NPN transistor is designed for General Purpose Amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.

Features
• Reduces Board Space
• High hFE, 210−460 (Typical)
• Low VCE(sat), < 0.5 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
   Compliant

HP
HP => Agilent Technologies
Description : General Purpose, Low Current NPN Silicon Bipolar Transistor

Description
Agilent’s AT-41532 is a General Purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery powered applications in cellular/PCS and other wireless markets. The AT-41532 uses the miniature 3-lead SOT-323 (SC-70) plastic package.

Features
General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz
• Performance (5 V, 5 mA) 0.9 GHz: 1 dB NF, 15.5 dB GA 1.8 GHz: 1.4 dB NF, 10.5 dB GA 2.4 GHz: 1.9 dB NF, 9 dB GA
• Characterized for 3, 5, and 8 V Use
• Miniature 3-lead SOT-323 (SC-70) Plastic Package
• High Breakdown Voltage (can be operated up to 10 V)

Applications
• LNA, Oscillator, Driver Amplifier, Buffer Amplifier, and Down Converter for Cellular and PCS Handsets and Cordless Telephones
• LNA, Oscillator, Mixer, and Gain Amplifier for Pagers
• Power Amplifier and Oscillator for RF-ID Tag
• LNA and Gain Amplifier for GPS
• LNA for CATV Set-Top Box

Fairchild
Fairchild Semiconductor
Description : NPN General Purpose Amplifier

NPN General Purpose Amplifier

This device is designed as a General Purpose Amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an Amplifier. Sourced from Process 23. See 2N3904 for characteristics.

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