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Part Name(s) : 27128 ST-Microelectronics
STMicroelectronics
Description : NMOS 128K 16K x 8 UV EPROM

The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by follow ing the programming procedure.

1. FAST ACCESS TIME: 200ns
2. EXTENDED TEMPERATURE RANGE
3. SINGLE 5 V SUPPLY VOLTAGE
4. LOW STANDBY CURRENT: 40mA max
5. TTL COMPATIBLE DURING READ and PROGRAM
6. FAST PROGRAMMING ALGORITHM
7. ELECTRONIC SIGNATURE
8. PROGRAMMING VOLTAGE: 12V

 

 

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Part Name(s) : NTE21128 NTE-Electronic
NTE Electronics
Description : Integrated Circuit NMOS, 128K (16K x 8) UV EPROM

Description:
The NTE21128 is a 131,072 bit UV erasable and electrically programmable memory EPROM in a 28–Lead DIP type package organized as 16,384 words by 8 bits. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

Features:
• Access Time: 250ns
• Single 5V Supply Voltage
• Low Standby Current: 40mA Max
• TTL Compatible During Read and Program
• Fast Programming Algorithm
• Programming Voltage: 12V Typ

 

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Part Name(s) : M27128A M27128A-20F1 M27128A-20F6 M27128A-25F1 M27128A-25F6 M27128A-2F1 M27128A-2F6 M27128A-30F1 M27128A-30F6 M27128A-3F1 M27128A-3F6 M27128A-4F1 M27128A-4F6 ST-Microelectronics
STMicroelectronics
Description : NMOS 128K (16K x 8) UV EPROM

DESCRIPTION
The M27128A is a 131,072 bit UV erasable and electrically programmable memory EPROM. It is organized as 16,384 words by 8 bits. The M27128A is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The trans parent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5 V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 40mA max
TTL COMPATIBLE DURING READ and PROGRAM
FAST PROGRAMMING ALGORITHM
ELECTRONIC SIGNATURE
PROGRAMMING VOLTAGE: 12V

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Part Name(s) : M2716 M2716-1F1 M2716-1F6 M2716F1 M2716F6 M27128AF1 M27128AF6 M27128A-1F1 M27128A-1F6 ST-Microelectronics
STMicroelectronics
Description : NMOS 16K (2K x 8) UV EPROM

DESCRIPTION
The M2716 is a 16,384 bit UV erasable and electrically programmable memory EPROM, ideally suited for applications where fast turn around and pattern experimentation are important requirements.
The M2716 is housed in a 24 pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

■ 2048 x 8 ORGANIZATION
■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER
■ ACCESS TIME:
    – M2716-1 is 350ns
    – M2716 is 450ns
■ SINGLE 5V SUPPLY VOLTAGE
■ STATIC-NO CLOCKS REQUIRED
■ INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM MODES
■ THREE-STATE OUTPUT with TIED-OR-CAPABILITY
■ EXTENDED TEMPERATURE RANGE
■ PROGRAMMING VOLTAGE: 25V

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Part Name(s) : 27128 M27128A Intel
Intel
Description : Advanced 128K 16K x 8 UV EPROM

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Part Name(s) : M2716 M2716M Intel
Intel
Description : 16K (2K x 8) UV ERASABLE PROM

16K (2K x 8) UV ERASABLE PROM

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Part Name(s) : M2732A M2732A-20F1 M2732A-20F6 M2732A-25F1 M2732A-25F6 M2732A-2F1 M2732A-2F6 M2732A-3F1 M2732A-3F6 M2732A-4F1 M2732A-4F6 M2732A-F1 M2732A-F6 M2732AF1 M2732AF6 ST-Microelectronics
STMicroelectronics
Description : NMOS 32K (4K x 8) UV EPROM

DESCRIPTION
The M2732A is a 32,768 bit UV erasable and electrically programmable memory EPROM. It is organized as 4,096 words by 8 bits. The M2732A with its single 5V power supply and with an access time of 200 ns, is ideal suited for applications where
fast turn around and pattern experimentation one important requirements.

FAST ACCESS TIME: 200ns
EXTENDED TEMPERATURE RANGE
SINGLE 5V SUPPLY VOLTAGE
LOW STANDBY CURRENT: 35mA max
INPUTS and OUTPUTS TTL COMPATIBLE
DURING READ and PROGRAM
COMPLETELY STATIC

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Part Name(s) : 27512 M27512 M27512-20F1 M27512-20F6 M27512-25F1 M27512-25F6 M27512-2F1 M27512-2F6 M27512-3F1 M27512-3F6 M27512F1 M27512F6 M27512-F1 M27512-F6 ST-Microelectronics
STMicroelectronics
Description : NMOS 512 Kbit (64Kb x 8) UV EPROM

DESCRIPTION
The M27512 is a 524,288 bit UV erasable and electrically programmable memory EPROM. It is organized as 65,536 words by 8 bits. The M27512 is housed in a 28 Pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

■ FAST ACCESS TIME: 200ns
■ EXTENDED TEMPERATURE RANGE
■ SINGLE 5V SUPPLY VOLTAGE
■ LOW STANDBY CURRENT: 40mA max
■ TTL COMPATIBLE DURING READ and PROGRAM
■ FAST PROGRAMMING ALGORITHM
■ ELECTRONIC SIGNATURE
■ PROGRAMMING VOLTAGE: 12V

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Part Name(s) : NTE2708 NTE-Electronic
NTE Electronics
Description : Integrated Circuit NMOS, 8K UV EPROM, 450ns

Description:
The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–gate technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including program data inputs) can be driven by Series 74 TTL circuits without the use of external pull–up resistors. Each output can drive one Series 74 or 74LS TTL circuit without external resistors. The data outputs for the NTE2708 are three–state for OR tying multiple devices on a common bus.
This EPROM is designed for high–density fixed memory applications where fast turn arounds and/or program changes are required. This device is designed for operation from 0° to +70°C and is supplied in a 24–Lead DIP package for insertion in mounting–hole rows on 600–mil (15.2 mm) centers.

Features:
• 1024 X 8 Organization
• All Inputs and Outputs Fully TTL Compatible
• Static Operation (No Clocks, No Refresh)
• Performance Ranges:
   Max Access: 450ns
   Min Cycle: 450ns
• 3–State Outputs for OR–Ties
• 8–Bit Output
• Plug–Compatible Pin–Outs Allowing Interchangeability

 

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Part Name(s) : M27256 M27256-1F1 M27256-1F6 M27256-20F1 M27256-20F6 M27256-25F1 M27256-25F6 M27256-2F1 M27256-2F6 M27256-3F1 M27256-3F6 M27256-4F1 M27256-4F6 M27256-F1 M27256-F6 M27256F1 M27256F6 ST-Microelectronics
STMicroelectronics
Description : NMOS 256 Kbit (32Kb x 8) UV EPROM

DESCRIPTION
The M27256 is a 262,144 bit UV erasable and electrically programmable memory EPROM. It is organized as 32.768 words by 8 bits. The M27256 is housed in a 28 pin Window Ceramic Frit-Seal Dual-in-Line package. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written to the device by following the programming procedure.

■FAST ACCESS TIME: 170ns
■EXTENDED TEMPERATURE RANGE
■SINGLE 5V SUPPLY VOLTAGE
■LOW STANDBY CURRENT: 40mA max
■TTL COMPATIBLE DURING READ and PROGRAM
■FAST PROGRAMMING ALGORITHM
■ELECTRONIC SIGNATURE
■PROGRAMMING VOLTAGE: 12V

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