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Part Name(s) : NM24C02UEM8X NM24C02UFDICE NM24C02UFLEM8X NM24C02UFLM8X NM24C02UFLMT8X NM24C02UFM8X NM24C02ULEM8X NM24C02ULM8X NM24C02ULMT8X NM24C02UM8X NM24C02UMT8X NM24C02UVM8X NM24C03 NM24C03UEM8X NM24C03UFLM8X NM24C03UFM8X NM24C03ULEM8X NM24C03ULFM8 NM24C03ULM8X NM24C03ULMT8X NM24C03UM8X Fairchild
Fairchild Semiconductor
Description : 2K-Bit STANDARD 2-WIRE BUS INTERFACE SERIAL EEPROM

General Description
The NM24C02/03 devices are 2048 bits of CMOS non-volatile electrically erasable memory. These devices conform to all specifications in the STANDARD IIC 2-WIRE protocol and are designed to minimize device pin count, and simplify PC board layout requirements.
The upper half (upper 1Kbit) of the memory of the NM24C03 can be write protected by connecting the WP pin to VCC. This section of memory then becomes unalterable unless WP is switched to VSS.
This communications protocol uses CLOCK (SCL) and DATA I/O (SDA) lines to synchronously clock data between the master (for example a microprocessor) and the slave EEPROM device(s). The STANDARD IIC protocol allows for a maximum of 16K of EEPROM memory which is supported by the Fairchild FAMILY in 2K, 4K, 8K, and 16K devices, allowing the user to configure the memory as the application requires with any combination of EEPROMs. In order to implement higher EEPROM memory densities on the IIC BUS, the Extended IIC protocol must be used. (Refer to the NM24C32 or NM24C65 datasheets for more infor mation.)
Fairchild EEPROMs are designed and tested for applications requiring high endurance, high reliability and low power consumption.

Features
■ Extended operating voltage 2.7V – 5.5V
■ 400 KHz clock frequency (F) at 2.7V - 5.5V
■ 200µA active current typical
   10µA standby current typical
   1µA standby current typical (L)
   0.1µA standby current typical (LZ)
■ IIC compatible INTERFACE
   – Provides bi-directional data transfer protocol
■ Schmitt trigger inputs
■ Sixteen byte page write mode
   – Minimizes total write time per byte
■ Self timed write cycle
   Typical write cycle time of 6ms
■ Hardware Write Protect for upper half (NM24C03 only)
■ Endurance: 1,000,000 data changes
■ Data retention greater than 40 years
■ Packages available: 8-pin DIP, 8-pin SO, and 8-pin TSSOP
■ Available in three temperature ranges
   - Commercial: 0° to +70°C
   - Extended (E): -40° to +85C
   - Automotive (V): -40° to +125°C

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Part Name(s) : HN58X2408FPI HN58X2408I HN58X2408TI HN58X2416FPI HN58X2416I HN58X2416TI HN58X2432FPI HN58X2432I HN58X2432TI HN58X2464FPI HN58X2464I HN58X2464TI Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM(8-kword × 8-bit)

Description
HN58X24xxI series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 32-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
- Standby: 3 µA(max)
- Active (Read): 1 mA(max)
- Active (Write): 3 mA(max)
• Automatic page write: 32-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: TSSOP-8pin and SOP-8pin
• Shipping tape and reel
- TSSOP 8-pin: 3,000 IC/reel
- SOP 8-pin: 2,500 IC/reel
• Temperature range: –40 to +85°C

 

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Part Name(s) : HN58X2408FPIE HN58X2408I HN58X2408TIE HN58X2416FPIE HN58X2416I HN58X2416TIE HN58X2432FPIE HN58X2432I HN58X2432TIE HN58X2464FPIE HN58X2464I HN58X2464TIE Renesas
Renesas Electronics
Description : Two-wire SERIAL INTERFACE 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM (8-kword × 8-bit)

Description
HN58X24xxI series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 32-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
- Standby: 3 µA (max)
- Active (Read): 1 mA (max)
- Active (Write): 3 mA (max)
• Automatic page write: 32-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: TSSOP-8pin , SOP-8pin
• Shipping tape and reel
- TSSOP 8-pin: 3,000 IC/reel
- SOP 8-pin: 2,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free products.

 

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Part Name(s) : HN58X24512FPI HN58X24512I Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 512k EEPROM (64-kword × 8-bit)

Description
HN58X24512I is the two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM).
It realizes high speed, low power consumption and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and low voltage circuitry technology.  It also has a 128-
byte page programming function to make it’s write operation faster.

Features
• Single supply:  1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency:  1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 2.5 V)
• Power dissipation:
 Standby:  3 µA (max)
 Active (Read):  2 mA (max)
 Active (Write):  5 mA (max)
• Automatic page write:  128-byte/page
• Write cycle time:  10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 2.5 V)
• Endurance:  105 Cycles (Page write mode)
• Data retention:  10 Years

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Part Name(s) : HN58X24512FPIE HN58X24512I Renesas
Renesas Electronics
Description : Two-wire SERIAL INTERFACE 512k EEPROM (64-kword × 8-bit)

Description
HN58X24512I is the two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. It also has a 128-byte page programming function to make it’ s write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 5.5 V)
• Power dissipation:
 Standby: 3 µA (max)
 Active (Read): 2 mA (max)
 Active (Write): 5 mA (max)
• Automatic page write: 128-byte/page
• Write cycle time: 10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 5.5 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: SOP-8pin (200 mil-wide)
• Shipping tape and reel: 1,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free products.

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Part Name(s) : HN58X24128FPI HN58X24128I HN58X24128TI HN58X24256FPI HN58X24256I HN58X24256TI Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit)

Description
HN58X24xxx series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 64-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
- Standby: 3 µA (max)
- Active (Read): 1 mA (max)
- Active (Write): 5 mA (max)
• Automatic page write: 64-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15 ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: SOP-8pin, TSSOP-14pin
• Shipping tape and reel
- TSSOP 14-pin: 2,000 IC/reel
- SOP 8-pin: 2,500 IC/reel
• Temperature range: –40 to +85°C

 

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Part Name(s) : NM24C16DICE NM24C16DWF NM24C16EM NM24C16EM8 NM24C16EM8X NM24C16EN NM24C16FDICE NM24C16FEM8X NM24C16FEN NM24C16FM8 NM24C16FM8X NM24C16FN NM24C16FVM8 NM24C16LEM NM24C16LEM8X NM24C16LEN NM24C16LM NM24C16LM8 NM24C16LM8X NM24C16LN NM24C16LVN NM24C16LZEM8 NM24C16LZEM8X NM24C16LZM8 NM24C16LZM8X National-Semiconductor
National ->Texas Instruments
Description : NM24CXX - STANDARD 2-WIRE BUS INTERFACE SERIAL EEPROM FAMILY

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Part Name(s) : TUSB2046 TUSB2046VF TI
Texas Instruments
Description : 4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE

description
The TUSB2046 is a 3.3 V CMOS hub device that provides one upstream port and four downstream ports in compliance with the 1.1 Universal SERIAL BUS (USB) specification. Because this device is implemented with a digital state machine instead of a microcontroller, no firmware programming is required. Fully compliant USB transceivers are integrated into the ASIC for all upstream and downstream ports. The downstream ports support both full-speed and low-speed devices by automatically setting the slew rate according to the speed of the device attached to the ports. The configuration of the BUSPWR pin selects either the  BUS-powered or the self-powered mode.

 Universal SERIAL BUS (USB) Version 1.1 Compliant
 32-Pin TQFP Package With a 0.8 mm Pin Pitch
 3.3-V Low Power ASIC Logic
 Integrated USB Transceivers
 State Machine Implementation Requires No Firmware Programming
 One Upstream Port and Four Downstream Ports
 All Downstream Ports Support Full-Speed and Low-Speed Operations
 Two Power Source Modes
    – Self-Powered Mode
    – BUS-Powered Mode
 Power Switching and Over-current Reporting is Provided Ganged or Per Port
 Supports Suspend and Resume Operations
 Supports Programmable Vendor ID and Product ID With External SERIAL EEPROM
 3-State EEPROM INTERFACE Allows EEPROM Sharing
 Push-Pull Outputs for PWRON Eliminate the Need for External Pullup Resistors
 Noise Filtering on OVRCUR Provides Immunity to Voltage Spikes
 Package Pinout Allows 2-Layer PCB
 Low EMI Emission Achieved by a 6-MHz Crystal Input
 Migrated From Proven TUSB2040 Hub
 Lower Cost Than the TUSB2040 Hub

 

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Part Name(s) : TUSB2046A TUSB2046AVF TI
Texas Instruments
Description : 4-PORT HUB FOR THE UNIVERSAL SERIAL BUS WITH OPTIONAL SERIAL EEPROM INTERFACE

description
The TUSB2046A is a 3.3-V CMOS hub device that provides one upstream port and four downstream ports in compliance with the 1.1 Universal SERIAL BUS (USB) specification. Because this device is implemented with a digital state machine instead of a microcontroller, no firmware programming is required. Fully compliant USB transceivers are integrated into the ASIC for all upstream and downstream ports. The downstream ports support both full-speed and low-speed devices by automatically setting the slew rate according to the speed of the device attached to the ports. The configuration of the BUSPWR pin selects either the BUS-powered or the self-powered mode.

 Universal SERIAL BUS (USB) Version 1.1 Compliant
 32-Pin LQFP† Package With a 0.8 mm Pin Pitch
 3.3-V Low Power ASIC Logic
 Integrated USB Transceivers
 State Machine Implementation Requires No Firmware Programming
 One Upstream Port and Four Downstream Ports
 All Downstream Ports Support Full-Speed and Low-Speed Operations
 Two Power Source Modes
   – Self-Powered Mode
   – BUS-Powered Mode
 Power Switching and Over-current Reporting is Provided Ganged or Per Port
 Supports Suspend and Resume Operations
 Supports Programmable Vendor ID and Product ID With External SERIAL EEPROM
 3-State EEPROM INTERFACE Allows EEPROM Sharing
 Push-Pull Outputs for PWRON Eliminate the Need for External Pullup Resistors
 Noise Filtering on OVRCUR Provides Immunity to Voltage Spikes
 Package Pinout Allows 2-Layer PCB
 Low EMI Emission Achieved by a 6-MHz Crystal Input
 Migrated From Proven TUSB2040 Hub
 Lower Cost Than the TUSB2040 Hub
 Enhanced System ESD Performance

 

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Part Name(s) : FM34W02U FM34W02UE FM34W02UL FM34W02ULZ FM34W02UM8 FM34W02UMT8 FM34W02UEM8 FM34W02UEMT8 FM34W02ULM8 FM34W02ULMT8 FM34W02ULEM8 FM34W02ULEMT8 FM34W02ULZM8 FM34W02ULZMT8 FM34W02ULZEM8 FM34W02ULZEMT8 Fairchild
Fairchild Semiconductor
Description : 2K-Bit STANDARD 2-WIRE BUS INTERFACE SERIAL EEPROM with Full Array Write Protect

General Description
The FM34W02U is 2048 bits of CMOS non-volatile electrically erasable memory. This device is specifically designed to support SERIAL Presence Detect circuitry in memory modules. This communications protocol uses CLOCK (SCL) and DATA I/O (SDA) lines to synchronously clock data between the master (for example a microprocessor) and the slave EEPROM device(s).

Features
■ PC100/PC133 Compliant
■ Extended Operating Voltage: 2.7V-5.5V
■ Software Write-Protection for first 128 bytes
■ Hardware Write-Protection for entire memory array
■ 200 µA active current typical
    – 1.0 µA standby current typical (L)
    – 0.1 µA standby current typical (LZ)
■ IIC compatible INTERFACE
    – Provides bidirectional data transfer protocol
■ Sixteen byte page write mode
    – Minimizes total write time per byte
■ Self timed write cycle
    - Typical write cycle time of 6ms
■ Endurance: 1,000,000 data changes
■ Data retention greater than 40 years
■ Packages available: 8-pin TSSOP and 8-pin SO
■ Temperature Ranges: Commercial and Extended

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