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Part Name(s) : TC5816BFT
Toshiba
Toshiba
Description : 16 MBIT (2M x 8 BITS) CMOS NAND Flash E2PROM

16 MBIT (2M x 8BITS) CMOS NAND Flash E2PROM

DESCRIPTION
The TC5816 device is a single 5.0-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND Flash EEPROM) with spare 64K X 8 bits. The device is oranized as 264 byte X 16 pages X 512 blocks.

Part Name(s) : KMKYL000VM-B603
Samsung
Samsung
Description : eMMC Chip - NAND Flash Memory Storage

Galaxy note - BGA162

16GB EMMC Chip NAND Flash Memory Storage IC KMKYL000VM-B603 for Samsung Galaxy S II HD LTE SHV-E120L

Part Name(s) : STEVAL-CCM007V2
ST-Microelectronics
STMicroelectronics
Description : STM32-based NAND Flash driver demonstration board (with TFT MB785/P)

Description
The STEVAL-CCM007V2 is a demonstration board for a NAND Flash driver based on the STM32F205ZET6 microcontroller.
It supports 512 byte and 2 kilobyte page SLC NAND Flash, and dynamic detection of NAND Flash based on “Device ID”.
The firmware automatically detects which NAND Flash is mounted on the PCB, and functions accordingly.

Features
• Designed for 512 byte and 2 kilobyte page size NAND Flash interfacing using the FSMC interface of the STM32
• Supports both the FAT (ELM_FS) file system and USB mass storage device mode
• Supports garbage collection, wear leveling, bad block management & ECC check
• Displays BMP images stored in NAND Flash on MB785 TFT
• RoHS compliant

Part Name(s) : STEVAL-CCM006V1
ST-Microelectronics
STMicroelectronics
Description : STM32-based NAND Flash driver evaluation board (without TFT)

Description
The STEVAL-CCM006V1 is a product evaluation board for a NAND Flash driver based on the STM32F103ZET6 microcontroller.
It supports 512 byte and 2 kilobyte page SLC NAND Flash, and dynamic detection of NAND Flash based on “Device ID”.
The firmware automatically detects which NAND Flash is mounted on the PCB, and functions accordingly.

Features
• Designed for 512 byte and 2 kilobyte page size NAND Flash interfacing using the FSMC interface of the STM32
• Supports both FAT (ELM_FS) file system and USB mass storage device mode
• Supports garbage collection, wear leveling, bad block management & ECC check
• RoHS compliant

Part Name(s) : STEVAL-CCM006V2
ST-Microelectronics
STMicroelectronics
Description : STM32-based NAND Flash driver evaluation board (without TFT)

Description
The STEVAL-CCM006V1 is a product evaluation board for a NAND Flash driver based on the STM32F103ZET6 microcontroller.
It supports 512 byte and 2 kilobyte page SLC NAND Flash, and dynamic detection of NAND Flash based on “Device ID”.
The firmware automatically detects which NAND Flash is mounted on the PCB, and functions accordingly.

Features
• Designed for 512 byte and 2 kilobyte page size NAND Flash interfacing using the FSMC interface of the STM32
• Supports both FAT (ELM_FS) file system and USB mass storage device mode
• Supports garbage collection, wear leveling, bad block management & ECC check
• RoHS compliant

Description : NAND Flash Memory(SLC Middle Capacity)

Product list of NAND Flash Memory SLC Middle Capacity.

Part Name(s) : HY27UAXXX
Hynix
Hynix Semiconductor
Description : 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

DESCRIPTION
The HYNIX HY27(U/S)A(08/16)1G1M series is a family of non-volatile Flash memories that use NAND cell technology. The devices operate 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x8 or x16 Input/ Output bus.
This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

Each block can be programmed and erased over 100,000 cycles. To extend the lifetime of NAND Flash devices it is strongly recommended to implement an Error Correction Code (ECC). A Write Protect pin is available to give a hardware protection against program and erase operations.

The devices feature an open-drain Ready/Busy output that can be used to identify if the Program/ Erase/Read (PER) Controller is currently active. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor.

A Copy Back command is available to optimize the management of defective blocks. When a Page Program operation fails, the data can be programmed in another page without having to resend the data to be programmed.

Part Name(s) : HY27UV08BG5M
Hynix
Hynix Semiconductor
Description : 32Gb NAND Flash

SUMMARY DESCRIPTION
The HY27UV08BG(5/D/F)M is a 4096Mx8bit with spare 128Mx8 bit capacity. The device is offered in 3.3V Vcc Core Power Supply, 3.3V Input-Output Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The Memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

The device contains 16384 blocks, composed by 128 pages consisting in two NAND structures of 32 series connected Flash cells. Every cell holds two bits. Even pages are stored in the LSB of the cells and odd pages are stored in the MSB of the cells Memory array is split into 2 planes, each of them consisting of 8196 blocks. Like all other 2KB . page NAND Flash devices, a program operation allows to write the 2112-byte page in typical 800us and an erase operation can be performed in typical 2.5ms on a 256K-byte block. In addition to this, thanks to multiplane architecture, it is possible to program 2 pages a time (one per each plane) or to erase 2 blocks a time (again, one per each plane).

Part Name(s) : SM3257
ETC
Unspecified
Description : USB2.0 Flash Memory Controller

The SM3257 is the latest USB Flash Disk controller with highly compatibility, and best performance intended for supporting Single-Channel MLC and TLC NAND type Flash Memory in one chip.

Based on 0.152um fabricated technology and low power consumption consideration, SM3257 complies with USB power specification ver.2.0 for bus-powered devices. For USB2.0 Flash Disk application, SM3257 supports high capacity up to 4 data Flash banks, “Write Protect” function, PC boot-up from USB2.0 Flash Disk, Password protection, and Secured Partitioning functions.

Hynix
Hynix Semiconductor
Description : 4Gbit (512Mx8bit) NAND Flash Memory

1.SUMMARY DESCRIPTION
Hynix NAND HY27UF(08/16)4G2B Series have 512Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3 Vcc Power Supply, and with x8 and x16 I/O interface Its NAND cell provides the mostcost-effective solution for the solid state mass storage market. The Memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
The device contains 4096 blocks, composed by 64 pages. A program operation allows to write the 2112-byte page in typical 200us and an erase operation can be performed in typical 1.5ms on a 128K-byte block.
Data in the page can be read out at 25ns cycle time per byte(x8). The I/O pins serve as the ports for address and data input/output as wellas command input.

FEATURES SUMMARY
HIGH DENSITY NAND Flash MEMORIES
- Cost effective solutions for mass storage applications
MULTIPLANE ARCHITECTURE
- Array is split into two independent planes. Parallel Operations on both planes are available, halving Program and erase time.
NAND INTERFACE
- x8/x16 bus width.
- Address/ Data Multiplexing
- Pinout compatiblity for all densities
SUPPLY VOLTAGE
- 3.3V device : Vcc = 2.7 V ~3.6 V
Memory CELL ARRAY
- x8 : (2K + 64) bytes x 64 pages x 4096 blocks
- x16 : (1K + 32) words x 64 pages x 4096 blocks
PAGE SIZE
- (2K + 64 spare) Bytes
- (1K + 32 spare) Words
BLOCK SIZE
- (128K + 4Kspare) Bytes
- (64K + 2Kspare) Words
PAGE READ / PROGRAM
- Random access : 25us (max.)
- Sequential access : 25ns (min.)
- Page program time : 200us (typ.)
- Multi-page program time (2 pages) : 200us (Typ)
COPY BACK PROGRAM
- Automatic block download without latency time
FAST BLOCK ERASE
- Block erase time: 1.5ms (Typ)
- Multi-block erase time (2 blocks) : 1.5ms (Typ) STATUS REGISTER
- Normal Status Register (Read/Program/Erase)
- Extended Status Register (EDC)
ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code
- 2nd cycle : Device Code
- 3rd cycle : Internal chip number, Cell Type, Number of Simultaneously Programmed Pages.
- 4th cycle : Page size, Block size, Organization, Spare size
- 5th cycle : Multiplane information
CHIP ENABLE DON’T CARE
- Simple interface with microcontroller HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions. DATA RETENTION
- 100,000 Program/Erase cycles (with 1bit/528byte ECC)
- 10 years Data Retention
PACKAGE
- HY27UF(08/16)4G2B-T(P)
: 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27UF(08/16)4G2B-T (Lead)
- HY27UF(08/16)4G2B-TP (Lead Free)

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