datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name  

P/N + Description + Content Search

Search Words :

Part Name(s) : BF1102 BF1102 BF1102R Philips
Philips Electronics
Description : Dual N-CHANNEL dual gate MOS-FETS

DESCRIPTION
The BF1102 is a combination of two equal dual gate MOS-FETS with shared source and gate 2 leads. The source and substrate are interconnected. An internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package.
   
FEATURES
• Two low noise gain controlled amplifiers in a single
    package
• Specially designed for 5 V applications
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance
    ratio.
   
APPLICATIONS
• Gain controlled low noise amplifier for VHF and UHF
    applications such as television tuners and professional
    communications equipment.
   

View
Part Name(s) : BF1102,115 BF1102 BF1102R NXP
NXP Semiconductors.
Description : Dual N-CHANNEL dual gate MOS-FETS

DESCRIPTION
The BF1102 and BF1102R are both two equal dual gate MOS-FETS which have a shared source pin and a shared gate 2 pin. Both devices have interconnected source and substrate; an internal bias circuit enables DC stabilization and a very good cross-modulation performance at 5 V supply voltage; integrated diodes between the gates and source protect against excessive input voltage surges. Both devices have a SOT363 micro-miniature plastic package.
   
FEATURES
• Two low noise gain controlled amplifiers in a single
    package
• Specially designed for 5 V applications
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance
    ratio.
   
APPLICATIONS
    Gain controlled low noise amplifier for VHF and UHF
    applications such as television tuners and professional
    communications equipment.
   

View
Part Name(s) : BF909 BF909R Philips
Philips Electronics
Description : N-CHANNEL dual gate MOS-FETS

DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

FEATURES
• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.

APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

View
Part Name(s) : BF904 BF904R NXP
NXP Semiconductors.
Description : N-CHANNEL dual gate MOS-FETS

DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
  
FEATURES
• Specially designed for use at 5 V supply voltage
• Short channel transistor with high transfer admittance to
    input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.  

APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage
    such as television tuners and professional
    communications equipment.

View
Part Name(s) : BF904 BF904R Philips
Philips Electronics
Description : N-CHANNEL dual gate MOS-FETS

DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143B and SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.
  
FEATURES
• Specially designed for use at 5 V supply voltage
• Short channel transistor with high transfer admittance to
    input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.
APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage
    such as television tuners and professional
    communications equipment.
  

View
Part Name(s) : BF909AWR BF909AWR,115 NXP
NXP Semiconductors.
Description : N-CHANNEL dual gate MOS-FETS

DESCRIPTION
Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC.

FEATURES
• Specially designed for use at 5 V supply voltage
• High forward transfer admittance
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Superior cross-modulation performance during AGC.

APPLICATIONS
• VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment.

View
Part Name(s) : BF1109 BF1109R BF1109WR Philips
Philips Electronics
Description : N-CHANNEL DUAL-GATE MOS-FETS

DESCRIPTION
Enhancement type N-CHANNEL field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

APPLICATIONS
• VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment.

View
Part Name(s) : BF1105 BF1105R BF1105WR NXP
NXP Semiconductors.
Description : N-CHANNEL DUAL-GATE MOS-FETS

DESCRIPTION
Enhancement type N-CHANNEL field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.
• Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

APPLICATIONS
• VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment.

View
Part Name(s) : BF1109 BF1109R BF1109WR NXP
NXP Semiconductors.
Description : N-CHANNEL DUAL-GATE MOS-FETS

DESCRIPTION
Enhancement type N-CHANNEL field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz
• Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

APPLICATIONS
• VHF and UHF applications with 9 V supply voltage, such as television tuners and professional communications equipment.

View
Part Name(s) : SD1137 SD1137BD SD1137CHP TN0106 TN0106N3 TN0106ND TN0110 TN0110N3 TN0110ND ETC1
Unspecified
Description : N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR]

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

View

1

2345678910 Next

 

All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]