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N - CHANNEL 900V - 0.25Ω - 26A - ISOTOP FAST power MOSFET

■ TYPICAL RDS(on) = 0.25 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ LOW INTRINSIC CAPACITANCE
■ GATE CHARGE MINIMIZED
■ REDUCED VOLTAGE SPREAD

APPLICATIONS
■ high CURRENT, high speed SWITCHING
■ SWITCH MODE power SUPPLY (SMPS)
■ DC-AC CONVERTER for WELDING EQUIPMENT AND UNINTERRUPTABLE power SUPPLY AND MOTOR DRIVE

SILICON N-channel MOSFET high speed power SWITCHING

General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies..

Features
• 5.2A, 900V, RDS(on) = 1.55Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
• 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V
• Low gate charge ( typically 24 nC)
• Low Crss ( typically 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
• 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V
• Low gate charge ( typically 24 nC)
• Low Crss ( typically 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Features
• 2.2A, 900V, RDS(on) = 7.2Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high speed switching and general purpose applications.

Features
● VDS = 250V
● ID = 10.2A
● RDS(ON) ≤ 0.28Ω @ VGS = 10V

Applications
● power Supply
● Motor Control
● high Current, high speed Switching

high-speed SWITCHING USE

● VDSS ............................................................................... 900V
● rDS (ON) (MAX) ................................................................ 7.3Ω
● ID ........................................................................................... 2A
● Viso ................................................................................2000V

APPLICATION
SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.

General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 6.4A, 900V, RDS(on) = 1.9Ω @VGS = 10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability