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Part Name(s) : STE26NA90
ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL 900V - 0.25Ω - 26A - ISOTOP FAST power MOSFET

N - CHANNEL 900V - 0.25Ω - 26A - ISOTOP FAST power MOSFET

■ TYPICAL RDS(on) = 0.25 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ LOW INTRINSIC CAPACITANCE
■ GATE CHARGE MINIMIZED
■ REDUCED VOLTAGE SPREAD

APPLICATIONS
high CURRENT, high speed SWITCHING
■ SWITCH MODE power SUPPLY (SMPS)
■ DC-AC CONVERTER for WELDING EQUIPMENT AND UNINTERRUPTABLE power SUPPLY AND MOTOR DRIVE

Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N-channel MOSFET high speed power SWITCHING

SILICON N-channel MOSFET high speed power SWITCHING

Part Name(s) : FQAF7N90
Fairchild
Fairchild Semiconductor
Description : 900V N-channel MOSFET

General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies..

Features
• 5.2A, 900V, RDS(on) = 1.55Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : FQP4N90
Fairchild
Fairchild Semiconductor
Description : 900V N-channel MOSFET

General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
• 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V
• Low gate charge ( typically 24 nC)
• Low Crss ( typically 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : FQB4N90 FQI4N90
Fairchild
Fairchild Semiconductor
Description : 900V N-channel MOSFET

General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features
• 4.2A, 900V, RDS(on) = 3.3 Ω @ VGS = 10 V
• Low gate charge ( typically 24 nC)
• Low Crss ( typically 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : FQAF11N90
Fairchild
Fairchild Semiconductor
Description : 900V N-channel MOSFET

General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 7.2A, 900V, RDS(on) = 0.96 Ω @ VGS = 10 V
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : FQP2N90
Fairchild
Fairchild Semiconductor
Description : 900V N-channel MOSFET

Features
• 2.2A, 900V, RDS(on) = 7.2Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Part Name(s) : MDD14N25C MDD14N25CRH
Magnachip
MagnaChip Semiconductor
Description : N-channel MOSFET 250V, 10.2A, 0.28Ω

General Description
These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high speed switching and general purpose applications.

Features
● VDS = 250V
● ID = 10.2A
● RDS(ON) ≤ 0.28Ω @ VGS = 10V

Applications
power Supply
● Motor Control
high Current, high speed Switching

Part Name(s) : FS2KM-18A
Powerex
Powerex
Description : Nch power MOSFET high-speed SWITCHING USE

high-speed SWITCHING USE

● VDSS ............................................................................... 900V
● rDS (ON) (MAX) ................................................................ 7.3Ω
● ID ........................................................................................... 2A
● Viso ................................................................................2000V

APPLICATION
SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.

Part Name(s) : FQA6N90
Fairchild
Fairchild Semiconductor
Description : 900V N-channel MOSFET

General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 6.4A, 900V, RDS(on) = 1.9Ω @VGS = 10 V
• Low gate charge ( typical 40 nC)
• Low Crss ( typical 17 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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