datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Words :

Part Name(s) : STB13N80K5_13 STF13N80K5_13 STP13N80K5_13 13N80K5_13 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800 V, 0.37 ?, 12 A ZENER-PROTECTED SUPERMESH? 5 POWER MOSFET IN DPAK, TO-220FP and TO-220 packages View

Description
These devices are N-CHANNEL ZENER-PROTECTED POWER MOSFETs realized IN SUPERMESH™ 5, a revolutionary avalanche-rugged very high voltage POWER MOSFET technology based on an INnovative proprietary vertical structure. The result is a drastic reduction IN on-resistance and ultra low gate charge for applications which require superior POWER density and high efficiency.

Features
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
ZENER-PROTECTED

Applications
• SwitchINg applications

Part Name(s) : 8N80K5 STF8N80K5 STFI8N80K5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800 V, 0.8? typ., 6 A ZENER-PROTECTED SUPERMESH? 5 POWER MOSFET IN TO-220FP and I2PAKFP packages View

Description
These N-CHANNEL ZENER-PROTECTED POWER MOSFETs are designed usINg ST’s revolutionary avalanche-rugged very high voltage SUPERMESH™ 5 technology, based on an INnovative proprietary vertical structure. The result is a dramatic reduction IN on-resistance, and ultra-low gate charge for applications which require superior POWER density and high efficiency.

• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
ZENER-PROTECTED

Applications
• SwitchINg applications

Part Name(s) : STP12NK80Z STB12NK80Z STW12NK80Z NJSEMI
New Jersey Semiconductor
Description : N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 ZENER-PROTECTED SUPERMESH? POWER MOSFET View

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 ZENER-PROTECTED SUPERMESHPOWER MOSFET

■ TYPICAL Ros(on) = 0.65 Q
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIE

Part Name(s) : STD2HNK60Z-1 D2HNK60Z STQ2HNK60ZR-AP Q2HNK60ZR STF2HNK60Z F2HNK60Z D2HNK60Z F2HNK60Z Q2HNK60ZR STD2HNK60Z STD2HNK60Z-1 STF2HNK60Z STQ2HNK60ZR-AP ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 4.4? - 2A - TO-92/TO-220FP/DPAK/IPAK ZENER-PROTECTED SUPERMESH? POWER MOSFET View

N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK ZENER-PROTECTED SUPERMESHMOSFET

DESCRIPTION
The SUPERMESH™ series is obtaINed through an extreme optimization of ST’s well established strip-based POWERMESH™ layout. IN addition to pushINg on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demandINg applications. Such series complements ST full range of high voltage MOSFETs IN cludINg revolutionary MDmesh™ products.

■ TYPICAL RDS(on) = 4.4Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ESD IMPROVED CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ AC ADAPTORS AND BATTERY CHARGERS
■ SWITH MODE POWER SUPPLIES (SMPS)


Part Name(s) : STD7N80K5 STP7N80K5 STU7N80K5 7N80K5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800 V, 0.95 ? typ., 6 A ZENER-PROTECTED SUPERMESH? 5 POWER MOSFETs IN DPAK, TO-220 and IPAK packages View

Description
These N-CHANNEL ZENER-PROTECTED POWER MOSFETs are designed usINg ST’s revolutionary avalanche-rugged very high voltage SUPERMESH™ 5 technology, based on an INnovative proprietary vertical structure. The result is a dramatic reduction IN on-resistance, and ultra-low gate charge for applications which require superior POWER density and high efficiency.

Features
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
ZENER-PROTECTED

Applications
• SwitchINg applications

Part Name(s) : B13NK60Z P13NK60Z P13NK60ZFP STB13NK60ZT4 STP13NK60Z STP13NK60ZFP STW13NK60Z W13NK60Z ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.48 ?, 13 A, TO-220, TO-220FP, D2PAK TO-247 ZENER-PROTECTED SUPERMESH? POWER MOSFET View

Description
The SUPERMESH™ series is obtaINed through an extreme optimization of ST’s well established strip-based POWERMESH™ layout. IN addition to pushINg on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demandINg applications.

Features
■ Gate charge mINimized
■ Very low INtrINsic capacitances
■ Very good manufacturINg repeatability

Application
■ SwitchINg applications

Part Name(s) : STB6NK90Z STP6NK90Z P6NK90Z STP6NK90ZFP P6NK90ZFP STB6NK90ZT4 B6NK90Z ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 900V - 1.56? - 5.8A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH?POWER MOSFET View

DESCRIPTION
The SUPERMESH™ series is obtaINed through an extreme optimization of ST’s well established stripbased POWERMESH™ layout. IN addition to pushINg on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demandINg applications. Such series complements ST full range of high voltage MOSFETs INcludINg revolutionary MDmesh™ products.

■ TYPICAL RDS(on) = 1.56 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING

Part Name(s) : B4NK60Z_11 D4NK60Z_11 P4NK60Z_11 P4NK60ZFP_11 STB4NK60Z_11 STB4NK60Z-1_11 STD4NK60Z_11 STD4NK60Z-1_11 STP4NK60Z_11 STP4NK60ZFP_11 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 1.76 ?, 4 A SUPERMESH? POWER MOSFET IN DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP View

Description
These devices are N-CHANNEL ZENER-PROTECTED POWER MOSFETs developed usINg STMicroelectronics SUPERMESH™ technology, achieved through optimization of STs well established strip-based POWERMESH™ layout. IN addition to a significant reduction IN on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demandINg applications.

Features
■ 100% avalanche tested
■ Very low INtrINsic capacitances

Applications
■ SwitchINg applications

Part Name(s) : B11NK50Z P11NK50Z P11NK50ZFP STB11NK50ZT4 STP11NK50Z STP11NK50ZFP STB11NK50Z STB11NK50Z STB11NK50ZT4 B11NK50Z STP11NK50ZFP P11NK50ZFP STP11NK50Z P11NK50Z ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 500 V, 0.48 ? , 10 A TO-220, TO-220FP, D2PAK ZENER-PROTECTED SUPERMESH? POWER MOSFET View

DESCRIPTION
The SUPERMESH™ series is obtaINed through an extreme optimization of ST’s well established strip-based POWERMESH™ layout. IN addition to pushINg on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demandINg applications. Such series complements ST full range of high voltage MOSFETs INcludINg revolutionary MDmesh™ products.

■ TYPICAL RDS(on) = 0.48 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (D2PAK VERSION)

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING

1

2345678910 Next

All Rights Reserved © datasheetbank.com 2014 - 2020 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]