datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Words :

Part Name(s) : STD9N60M2 STP9N60M2 STU9N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.72 ? typ., 5.5 A MDMESH II Plus? low Qg POWER MOSFET in DPAK, TO-220 and IPAK packages View

Description
These devices are N-CHANNEL POWER MOSFETs developed using a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
ZENER-PROTECTED

Applications
• Switching applications

Part Name(s) : STD3NM60 STP4NM60 P4NM60 STD3NM60T4 STD3NM60-1 D3NM60 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 1.3? - 3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH? POWER MOSFET View

DESCRIPTION
The MDMESH™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s POWERMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
   
■ TYPICAL RDS(on) = 1.3 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ IMPROVED ESD CAPABILITY
■ LOW INPUT CAPACITANCE AND GATE
    CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
    MANUFACTORING YIELDS
   
APPLICATIONS
    The MDMESH™ family is very suitable for increase
    the POWER density of high voltage converters allowing
    system miniaturization and higher efficiencies.
   

Part Name(s) : 10NM60N STD10NM60N STF10NM60N STP10NM60N STU10NM60N ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.53 ?, 10 A, DPAK, TO-220, TO-220FP, IPAK MDMESH? II POWER MOSFET View

Description
These devices are N-CHANNEL 600 V POWER MOSFET realized using the second generation of MDMESH™ technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics.

■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

Application
Switching applications

 

Part Name(s) : STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 10N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.550 ? typ., 7.5 A MDMESH II Plus? low Qg POWER MOSFETs in DPAK, DPAK, TO-220 and IPAK packages View

Description
These devices are N-CHANNEL POWER MOSFETs developed using a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
ZENER-PROTECTED

Applications
• Switching applications


Part Name(s) : STD2NM60 STD2NM60-1 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 2.8? - 2A DPAK/IPAK ZENER-PROTECTED MDMESH? POWER MOSFET View

DESCRIPTION
The MDMESH™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s POWERMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
   
■ TYPICAL RDS(on) = 2.8 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
    CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
    MANUFACTORING YIELDS
   
APPLICATIONS
    The MDMESH™ family is very suitable for increase
    the POWER density of high voltage converters allowing
    system miniaturization and higher efficiencies.
   

Part Name(s) : STD3NM50 STD3NM50-1 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 550V @ Tjmax- 2.5? - 3A DPAK/IPAK ZENER-PROTECTED MDMESH? MOSFET View

DESCRIPTION
The MDMESH™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s POWERMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
   
■ TYPICAL RDS(on) = 2.5 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ IMPROVED ESD CAPABILITY
■ LOW INPUT CAPACITANCE AND GATE
    CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
    MANUFACTORING YIELDS
   
APPLICATIONS
    The MDMESH™ family is very suitable for increase
    the POWER density of high voltage converters allowing
    system miniaturization and higher efficiencies.
   

Part Name(s) : 18N55M5 STB18N55M5 STD18N55M5 STF18N55M5 STP18N55M5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 550 V, 0.18 ?, 13 A, MDMESH? V POWER MOSFET in DPAK, DPAK, TO-220FP and TO-220 View

Description
The devices are N-CHANNEL MDMESH™ V POWER MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based POWER MOSFETs, making it especially suitable for applications which require superior POWER density and outstanding efficiency.

Features
DPAK worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested

Application
  Switching applications

 

Part Name(s) : STD7N80K5 STP7N80K5 STU7N80K5 7N80K5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800 V, 0.95 ? typ., 6 A ZENER-PROTECTED SuperMESH? 5 POWER MOSFETs in DPAK, TO-220 and IPAK packages View

Description
These N-CHANNEL ZENER-PROTECTED POWER MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior POWER density and high efficiency.

Features
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
ZENER-PROTECTED

Applications
• Switching applications

Part Name(s) : STB18N60M2 STP18N60M2 STW18N60M2 18N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.255 ? typ., 13 A MDMESH II Plus? low Qg POWER MOSFET in D2PAK, TO-220 and TO-247 packages View

Description
These devices are N-CHANNEL POWER MOSFETs developed using a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
ZENER-PROTECTED

Applications
• Switching applications
• LLC converters, resonant converters

1

2345678910 Next

All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]