datasheetbank_Logo    Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site
Part Name  

P/N + Description + Content Search

Search Words :

Part Name(s) : STD110NH02L STD110NH02LT4 STD110NH02L STD110NH02LT4 D110NH02L ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 24V - 0.0044Ω - 80A - DPAK STRIPFETIII POWER MOSFET

DESCRIPTION
The STD110NH02L utilizes the latest advanced design rules of ST’s proprietary STRIPFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.
   
■ TYPICAL RDS(on) = 0.0044 Ω @ 10 V
■ TYPICAL RDS(on) = 0.0056 Ω @ 5 V
■ RDS(ON) * Qg INDUSTRY’s BENCHMARK
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ SURFACE-MOUNTING DPAK (TO-252)
    POWER PACKAGE IN TAPE & REEL
    (SUFFIX “T4")
   
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
    FOR HIGH EFFICIENCY DC/DC CONVERTES
   

View
Part Name(s) : STD50NH02L STD50NH02L-1 STD50NH02LT4 D50NH02L ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 24V - 0.0085Ω - 50A - DPAK/IPAK STRIPFETIII POWER MOSFET

Description
This device utilizes the latest advanced design rules of ST’s proprietary STRIPFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

General features
■ Logic level device
■ RDS(ON) * Qg Industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold drive

Applications
■ Switching application

View
Part Name(s) : D38NH02L STD38NH02L STD38NH02L-1 STD38NH02LT4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 24V - 0.011Ω - 38A - DPAK/IPAK STRIPFETIII POWER MOSFET

Description
This device utilizes the latest advanced design rules of ST’s proprietary STRIPFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

General features
■ Logic level device
■ RDS(ON) * Qg Industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold drive

Applications
■ Switching application

View
Part Name(s) : B80NF06 P80NF06 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 W80NF06 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.0065Ω- 80A TO-220/D² PAK/TO- 247 STRIPFET II™ POWER MOSFET

Description
This POWER MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
Type                VDSS              RDS(on)         ID
STB80NF06        60V               <0.008Ω       80A
STP80NF06        60V               <0.008Ω       80A
STW80NF06       60V               <0.008Ω       80A
■ 100% avalanche tested
■ Low threshold drive

Applications
■ Switching application

Type                VDSS              RDS(on)         ID
STB80NF06        60V               <0.008Ω       80A
STP80NF06        60V               <0.008Ω       80A
STW80NF06       60V               <0.008Ω       80A

View
Part Name(s) : STD90NH02L STD90NH02L-1 STD90NH02LT4 STD90NH02L STD90NH02LT4 STD90NH02L-1 D90NH02L ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 24V - 0.0052Ω - 60A - DPAK/IPAK STRIPFET™ II POWER MOSFET

DESCRIPTION
The STD90NH02L utilizes the latest advanced design rules of ST’s proprietary STRIPFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

■ TYPICAL RDS(on) = 0.0052 Ω @ 10 V
■ TYPICAL RDS(on) = 0.007 Ω @ 5 V
■ RDS(ON) * Qg INDUSTRY’s BENCHMARK
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ THROUGH-HOLE IPAK (TO-251) POWER
   PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252)
   POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES

View
Part Name(s) : B140NF55 P140NF55 STB140NF55 STB140NF55-1 STP140NF55 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 55V - 0.0065Ω- 80A - D²2PAK - I²PAK - TO-220 STRIPFET™ II POWER MOSFET

Description
This POWER MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.

General features
Type                                            VDSS  RDS(on)   ID(1)
STB140NF55                                  55V   <0.008Ω   80A
STB140NF55-1                               55V   <0.008Ω   80A
STP140NF55                                  55V   <0.008Ω   80A
1. Current limited by package

Applications
■ Motor control
■ High current, switching application

View
Part Name(s) : D70N02L STD70N02L STD70N02L-1 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 25V - 0.0068Ω- 60A - DPAK - IPAK STRIPFETIII POWER MOSFET

Description
This series of products utilizes the latest advanced design rules of ST’s proprietary STRIPFET™ technology. Thisis suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.

■ RDS(ON)* Qg industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device

Application
■ Switching applications
 

View
Part Name(s) : D90N02L STD90N02L STD90N02L-1 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 25V - 0.0052Ω - 60A - DPAK - IPAK STRIPFETIII POWER MOSFET

Description
This series of products utilizes the latest advanced design rules of ST’s proprietary STRIPFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.

FEATURES
■ RDS(ON) * Qg industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device
■ In compliance with the 2002/95/ec european directive

Application
■ Switching applications
 

View
Part Name(s) : STD100NH02L STD100NH02LT4 STD100NH02L-1 D100NH02L STD100NH02L STD100NH02L_06 STD100NH02LT4 STD100NH02L-1 D100NH02L ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 24V - 0.0042Ω - 60A - DPAK - IPAK STRIPFET™ II POWER MOSFET

DESCRIPTION
The STD100NH02L utilizes the latest advanced design rules of ST’s proprietary STRIPFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

■ TYPICAL RDS(on) = 0.0042 Ω @ 10 V
■ TYPICAL RDS(on) = 0.005 Ω @ 5 V
■ RDS(ON) * Qg INDUSTRY’s BENCHMARK
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES

View
Part Name(s) : D70N03L D70N03L-1 STD70N03L STD70N03L-1 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 30V - 0.0059Ω - 70A - DPAK / IPAK STRIPFETIII POWER MOSFET

Description
This product utilizes the latest advanced design rules of ST’s proprietary STRIPFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.

General features
■ RDS(ON) * Qg industry’s benchmark
■ Conduction losses reduced
■ Switching losses reduced
■ Low threshold device

Applications
■ Switching application

 

View

1

2345678910 Next

 

All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]