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Part Name(s) : EMH2302 SANYO
SANYO -> Panasonic
Description : P-Channel SILICON MOSFET General-Purpose Switching Device Applications

P-Channel SILICON MOSFET
General-Purpose Switching Device Applications

Features
• The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
• 4V drive.

 

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Part Name(s) : 2SK1013-01 Fuji
Fuji Electric
Description : N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

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Part Name(s) : BF2000 Q62702-F1771 Siemens
Siemens AG
Description : SILICON N Channel MOSFET Tetrode

SILICON N Channel MOSFET Tetrode

Target data sheet
• Short-channel transistor with high S/C quality factor
• For low-noise, gain-controlled input stages up to 1 GHz

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Part Name(s) : BF2000W Q62702-F1772 Siemens
Siemens AG
Description : SILICON N Channel MOSFET Tetrode

SILICON N Channel MOSFET Tetrode

Target data sheet
• Short-channel transistor with high S/C quality factor
• For low-noise, gain-controlled input stages up to 1 GHz

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Part Name(s) : 2SK1270 K1270 Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING

SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING

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Part Name(s) : BF999 BF999E6327 Infineon
Infineon Technologies
Description : SILICON N-CHANNEL MOSFET Triode

SILICON N-CHANNEL MOSFET Triode

For high-frequency stages up to 300 MHz preferably in FM applications

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Part Name(s) : BF999 Q62702-F1132LB Siemens
Siemens AG
Description : SILICON N Channel MOSFET Triode

SILICON N-CHANNEL MOSFET Triode

For high-frequency stages up to 300 MHz preferably in FM applications

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Part Name(s) : ALD1115 ALD1115PAL ALD1115SAL ALD
Advanced Linear Devices
Description : COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET

GENERAL DESCRIPTION
The ALD1115 is a monolithic complementary N-CHANNEL and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS SILICON gate CMOS process. It consists of a N-CHANNEL MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.

FEATURES
• Thermal tracking between N-CHANNEL and P-channel
• Low threshold voltage of 0.7V for both N-CHANNEL and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 1013Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Single N-CHANNEL MOSFET and single P-channel MOSFET in one package

APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete analog switches
• Analog signal choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
• CMOS inverter stage
• Diode clamps
• Source followers

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Part Name(s) : 2SK2926S K2926S Twtysemi
TY Semiconductor
Description : N-CHANNEL SILICON MOSFET

N-CHANNEL SILICON MOSFET

Features
Low on-resistance
RDS=0.042Ω typ.
High speed switching

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Part Name(s) : 2SK2926S K2926S TYSEMI
TY Semiconductor
Description : N-CHANNEL SILICON MOSFET

N-CHANNEL SILICON MOSFET

Features
Low on-resistance
RDS=0.042Ω typ.
High speed switching

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