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Part Name(s) : MRF151A
MACOM
Tyco Electronics
Description : The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

Part Name(s) : NTE222
NTE-Electronic
NTE Electronics
Description : Field Effect Transistor Dual Gate N–Channel MOSFET

Field Effect Transistor Dual Gate N–Channel MOSFET

ALD
Advanced Linear Devices
Description : COMPLEMENTARY N-Channel AND P-CHANNEL MOSFET

GENERAL DESCRIPTION
The ALD1115 is a monolithic complementary N-Channel and P-channel Transistor pair intended for a broad range of analog applications. These enhancement-mode Transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of a N-Channel MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.

FEATURES
• Thermal tracking between N-Channel and P-channel
• Low threshold voltage of 0.7V for both N-Channel and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 1013Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Single N-Channel MOSFET and single P-channel MOSFET in one package

APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete analog switches
• Analog signal choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
• CMOS inverter stage
• Diode clamps
• Source followers

ALD
Advanced Linear Devices
Description : COMPLEMENTARY N-Channel AND P-CHANNEL MOSFET

GENERAL DESCRIPTION
The ALD1115 is a monolithic complementary N-Channel and  P-channel Transistor pair intended for a broad range of analog applications.  These enhancement-mode Transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process.  It consists of a N-Channel MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.

FEATURES
• Thermal tracking between N-Channel and P-channel
• Low threshold voltage of 0.7V for both N-Channel and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 1013Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Single N-Channel MOSFET and single P-channel MOSFET in one package

APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete analog switches
• Analog signal choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
• CMOS inverter stage
• Diode clamps
• Source followers

ALD
Advanced Linear Devices
Description : DUAL N-Channel AND DUAL P-CHANNEL MATCHED MOSFET PAIR

GENERAL DESCRIPTION
The ALD1103 is a monolithic dual N-Channel and dual P-channel matched Transistor pair intended for a broad range of analog applications. These enhancement-mode Transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process. It consists of an ALD1101 N-Channel MOSFET pair and an ALD1102 P-channel MOSFET pair in one package.

FEATURES
• Thermal tracking between N-Channel and P-channel pairs
• Low threshold voltage of 0.7V for both N-Channel & P-channel MOSFETS
• Low input capacitance
• Low Vos -- 10mV
• High input impedance -- 1013 Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Matched N-Channel and matched P-channel in one package
• RoHS compliant

ALD
Advanced Linear Devices
Description : DUAL N-Channel AND DUAL P-CHANNEL MATCHED PAIR MOSFET

GENERAL DESCRIPTION
The ALD1105 is a monolithic dual N-Channel and dual P-channel complementary matched Transistor pair intended for a broad range of analog applications.  These enhancement-mode Transistors are manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process.  It consists of an ALD1116 N-Channel MOSFET pair and an ALD1117  P-channel MOSFET pair in one package. The ALD1105 is a low drain current, low leakage  current version of the ALD1103.

FEATURES
• Thermal tracking between N-Channel and P-channel pairs
• Low threshold voltage of 0.7V for both N-Channel & P-channel MOSFETs
• Low input capacitance
• Low Vos -- 10mV
• High input impedance -- 1013 Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 109
• Matched N-Channel pair and matched P-channel pair in one package

Part Name(s) : 2N7218 IRFM140
Semelab
Semelab - > TT Electronics plc
Description : N-Channel POWER MOSFET

N-Channel POWER MOSFET

• Low RDS(on) MOSFET Transistor In A Isolated Hermetic Metal Package
• Designed For Switching, Power Supply, Motor Control and Amplifier Applications
• Screening Options Available

Part Name(s) : BF2000 Q62702-F1771
Siemens
Siemens AG
Description : Silicon N Channel MOSFET Tetrode

Silicon N Channel MOSFET Tetrode

Target data sheet
• Short-channel Transistor with high S/C quality factor
• For low-noise, gain-controlled input stages up to 1 GHz

Part Name(s) : BF2000W Q62702-F1772
Siemens
Siemens AG
Description : Silicon N Channel MOSFET Tetrode

Silicon N Channel MOSFET Tetrode

Target data sheet
• Short-channel Transistor with high S/C quality factor
• For low-noise, gain-controlled input stages up to 1 GHz

Part Name(s) : 2N6784
Semelab
Semelab - > TT Electronics plc
Description : N-Channel MOSFET in a Hermetically sealed TO39 Metal Package

N-Channel MOSFET in a Hermetically sealed TO39 Metal Package.

N-Channel MOSFET.
    VDSS = 200V
    ID = 2.25A
    RDS(ON) = 1.5Ω

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