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Part Name(s) : J180 NEC
NEC => Renesas Technology
Description : P-Channel MOS FET / HIGH-SPEED SWITCHING View

The 2SJ180, P-channel vertical type MOS FET, is a SWITCHING device which can be driven directly by the output of ICs having a 5V power source.

 

As the MOS FET has low on-state resistance and excellent SWITCHING characteristtics, it is suitable FOR driving actuators such as motors, relays, and solenoids.

 

Part Name(s) : K1274 NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING View

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

Part Name(s) : 2SJ174 Hitachi
Hitachi -> Renesas Electronics
Description : SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING View

SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

Part Name(s) : 2SK296 K296 Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING View

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING


Part Name(s) : 2SK1273-T1 2SK1273-T2 NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING View

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

Part Name(s) : 2SJ184-T 2SJ184-T/JM 2SJ184/JM J184 NEC
NEC => Renesas Technology
Description : P-Channel MOS FET / HIGH-SPEED SWITCHING View

The 2SJ184, P-channel vertical type MOS FET, is a SWITCHING device which can be dricen by 2.5V power supply.

 

As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable FOR appliances including VTR camera and headphone stereos which need power saving.

Part Name(s) : 2SK3215 K3215 Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N Channel MOS FET High Speed SWITCHING View

Silicon N Channel MOS FET High Speed SWITCHING

Features
•  Low on-resistance
   RDS=350mΩtyp.
•  High speed SWITCHING
•  4V gate drive device can be driven from 5V source

Part Name(s) : 2SK2927 K2927 Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N Channel MOS FET High Speed Power SWITCHING View

Silicon N Channel MOS FET High Speed Power SWITCHING

Features
•  Low on-resistance
   RDS=0.055 Ω typ.
•  High speed SWITCHING
•  4V gate drive device can be driven from 5V source

Part Name(s) : 2SK2928 Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N Channel MOS FET High Speed Power SWITCHING View

Silicon N Channel MOS FET High Speed Power SWITCHING

Features
•  Low on-resistance
    RDS(on)= 0.040Ω typ.
•  4V gate drive devices.
•  High speed SWITCHING

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