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Part Name(s) : 2SK681 2SK681A
NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

The 2SK681A, N-CHANNEL vertical type MOS FET, is a SWITCHING device which can be driven directly by the output of ICs having a 5 V power source.
The MOS FET has excellent SWITCHING characteristic and is suitable FOR use as a HIGH-SPEED SWITCHING device in digital circuits.

Part Name(s) : K1274
NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

Part Name(s) : 2SK296 K296
Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N-CHANNEL MOS FET HIGH SPEED SWITCHING

Silicon N-CHANNEL MOS FET HIGH SPEED SWITCHING

Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

Part Name(s) : 2SK383
Hitachi
Hitachi -> Renesas Electronics
Description : SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET

HIGH SPEED POWER SWITCHING

NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

Part Name(s) : 2SK1273-T1 2SK1273-T2
NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

Part Name(s) : 2SK2928
Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N Channel MOS FET High Speed Power SWITCHING

Silicon N Channel MOS FET High Speed Power SWITCHING

Features
•  Low on-resistance
    RDS(on)= 0.040Ω typ.
•  4V gate drive devices.
•  High speed SWITCHING

Part Name(s) : 2SK3215 K3215
Hitachi
Hitachi -> Renesas Electronics
Description : Silicon N Channel MOS FET High Speed SWITCHING

Silicon N Channel MOS FET High Speed SWITCHING

Features
•  Low on-resistance
   RDS=350mΩtyp.
•  High speed SWITCHING
•  4V gate drive device can be driven from 5V source

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