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Part Name(s) : STD2NB80-1 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800V - 4.6 ? - 1.9A - IPAK/DPAK POWERMESH? MOSFET View

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 4.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ FOR SMD DPAK VERSION CONTACT SALES OFFICE

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Part Name(s) : STD19NE06 STD19NE06-1 STD19NE06-T4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.042 ? - 19A IPAK/DPAK STripFET? POWER MOSFET View

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.042 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ 175 oC OPERATING TEMPERATURE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL(SUFFIX “T4")

APPLICATIONS
■ DC MOTOR CONTROL
■ DC-DC & DC-AC CONVERTERS
■ SYNCHRONOUS RECTIFICATION

Part Name(s) : STD19NE06L STD19NE06L-1 STD19NE06L-T4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.038 ? - 19A IPAK/DPAK STripFET? POWER MOSFET View

DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.038 Ω
■ 100% AVALANCHE TESTED
■ LOW GATE CHARGE
■ THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1")
■ SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RALAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS

Part Name(s) : STD2NB80 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800V - 4.6 ? - 1.9A - IPAK/DPAK POWERMESH? MOSFET View

DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 4.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL (2500 UNITS)

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Part Name(s) : STD6NC40 STD6NC40-1 STD6NC40-T4 STD6NC40T4 STD6NC401 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 400V - 0.75? - 5A - DPAK / IPAK POWERMESH?II MOSFET View

DESCRIPTION
The POWERMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

■ TYPICAL RDS(on) = 0.75Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
■ ADD SUFFIX “-1” FOR ORDERING IN IPAK

APPLICATIONS
■ SWITH MODE LOW POWER SUPPLIES (SMPS)
■ CFL

Part Name(s) : NTD4806N NTD4806N-1G NTD4806N-35G NTD4806NT4G ON-Semiconductor
ON Semiconductor
Description : Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK View

Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices

Applications
• CPU Power Delivery
• DC--DC Converters
• Low Side Switching

Part Name(s) : NTD4808N NTD4808N-1G NTD4808N-35G NTD4808NT4G ON-Semiconductor
ON Semiconductor
Description : Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK View

Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK

Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices

Applications
• CPU Power Delivery
• DC--DC Converters
• Low Side Switching

Part Name(s) : STD4NB40 STD4NB40-1 STD4NB40T4 STD4NB40 STD4NB40-1 STD4NB40T4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 400V - 1.47? - 4A DPAK/IPAK POWERMESH? MOSFET View

N - CHANNEL ENHANCEMENT MODE POWERMESH MOSFET

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 1.47 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
   EQUIPMENT AND UNINTERRUPTIBLE
   POWER SUPPLIES AND MOTOR DRIVE

Part Name(s) : STD2NC60 STD2NC60-1 STD2NC60T4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 3.3? - 2A DPAK / IPAK POWERMESH?II MOSFET View

DESCRIPTION
The POWERMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

■ TYPICAL RDS(on) = 3.3Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS

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