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Part Name(s) : STP12NK80Z STB12NK80Z STW12NK80Z NJSEMI
New Jersey Semiconductor
Description : N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH? Power MOSFET View

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET

■ TYPICAL Ros(on) = 0.65 Q
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIE

Part Name(s) : STW7NB80 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800V - 1.6? - 6.5A - TO-247 POWERMESH? MOSFET View

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 1.6 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Part Name(s) : STW9NB80 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800V - 0.85?- 9.3A - TO-247 POWERMESH MOSFET View

DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on)= 0.85Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ±30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Part Name(s) : STW11NB80 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800V - 0.65? - 11A - T0-247 POWERMESH? MOSFET View

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.65 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

 


Part Name(s) : STW8NC80Z ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800V - 1.3 ? - 6.7A TO-247 Zener-Protected POWERMESH?III MOSFET View

DESCRIPTION
The third generatio- of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur passed on-resistance per unit area while integrating back-to-back Zener diodes betwee- gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as request ed by a large variety of single-switch applications.

- TYPICAL RDS(on) = 1.3 Ω
- EXTREMELY HIGH dv/dt CAPABILITY GATE TO-SOURCE ZENER DIODES
- 100% AVALANCHE TESTED
- VERY LOW INTRINSIC CAPACITANCES
- GATE CHARGE MINIMIZED

APPLICATIONS
- SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
- WELDING EQUIPMENT

 

Part Name(s) : STW9NC80Z W9NC80Z ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800V - 0.82? - 9.4A TO-247 Zener-Protected POWERMESH?III MOSFET View

The third generation of MESH OVERLAY Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

TYPICAL RDS(on) = 0.82Ω
EXTREMELY HIGH dv/dt CAPABILITY
GATE-TO-SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED

Part Name(s) : FQAF7N80 Fairchild
Fairchild Semiconductor
Description : 800V N-CHANNEL MOSFET View

800V N-CHANNEL MOSFET

Part Name(s) : STH6NA80FI STW6NA80 ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL 800V - 1.8? - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR View

N - CHANNEL 800V - 1.8Ω - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR

■ TYPICAL RDS(on)= 1.8 Ω
■ AVALANCE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW GATE CHARGE
■ VERY HIGH CURRENT CAPABILITY
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

Part Name(s) : STN1NB80 ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL 800V - 16 ? - 0.2A - SOT-223 POWERMESH? MOSFET View

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 16
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ AC ADAPTORS AND BATTERY CHARGERS FOR HANDHELD EQUIPMENT

 

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