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Part Name(s) : STD2NM60 STD2NM60-1 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 2.8? - 2A DPAK/IPAK ZENER-PROTECTED MDMESH? POWER MOSFET View

DESCRIPTION
The MDMESH™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s POWERMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
   
■ TYPICAL RDS(on) = 2.8 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ 100% AVALANCHE TESTED
■ LOW INPUT CAPACITANCE AND GATE
    CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
    MANUFACTORING YIELDS
   
APPLICATIONS
    The MDMESH™ family is very suitable for increase
    the POWER density of high voltage converters allowing
    system miniaturization and higher efficiencies.
   

Part Name(s) : STD2HNK60Z-1 D2HNK60Z STQ2HNK60ZR-AP Q2HNK60ZR STF2HNK60Z F2HNK60Z D2HNK60Z F2HNK60Z Q2HNK60ZR STD2HNK60Z STD2HNK60Z-1 STF2HNK60Z STQ2HNK60ZR-AP ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 4.4? - 2A - TO-92/TO-220FP/DPAK/IPAK ZENER-PROTECTED SuperMESH? POWER MOSFET View

N-CHANNEL 600V - 4.4Ω - 2.0A TO-92/TO-220FP/IPAK ZENER-PROTECTED SuperMESH™ MOSFET

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based POWERMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs in cluding revolutionary MDMESH™ products.

■ TYPICAL RDS(on) = 4.4Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ ESD IMPROVED CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ AC ADAPTORS AND BATTERY CHARGERS
■ SWITH MODE POWER SUPPLIES (SMPS)

Part Name(s) : STD3NM60 STP4NM60 P4NM60 STD3NM60T4 STD3NM60-1 D3NM60 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 1.3? - 3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH? POWER MOSFET View

DESCRIPTION
The MDMESH™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s POWERMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
   
■ TYPICAL RDS(on) = 1.3 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ IMPROVED ESD CAPABILITY
■ LOW INPUT CAPACITANCE AND GATE
    CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
    MANUFACTORING YIELDS
   
APPLICATIONS
    The MDMESH™ family is very suitable for increase
    the POWER density of high voltage converters allowing
    system miniaturization and higher efficiencies.
   

Part Name(s) : STD3NM50 STD3NM50-1 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 550V @ Tjmax- 2.5? - 3A DPAK/IPAK ZENER-PROTECTED MDMESH? MOSFET View

DESCRIPTION
The MDMESH™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s POWERMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
   
■ TYPICAL RDS(on) = 2.5 Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ IMPROVED ESD CAPABILITY
■ LOW INPUT CAPACITANCE AND GATE
    CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL AND HIGH
    MANUFACTORING YIELDS
   
APPLICATIONS
    The MDMESH™ family is very suitable for increase
    the POWER density of high voltage converters allowing
    system miniaturization and higher efficiencies.
   


Part Name(s) : STB4NK60ZT4 STD4NK60ZT4 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V-1.76?-4A TO-220/FP/DPAK/IPAK/D2PAK/I2PAK ZENER-PROTECTED SuperMESH? POWER MOSFET View

DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip based POWERMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs in cluding revolutionary MDMESH™ products.

■ TYPICAL RDS(on) = 1.76 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING

Part Name(s) : STW26NM60 W26NM60 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 0.125? - 26A TO-247 ZENER-PROTECTED MDMESH? POWER MOSFET View

DESCRIPTION
The MDMESH™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s POWERMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

■ TYPICAL RDS(on) = 0.125Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ IMPROVED ESD CAPABILITY
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE

APPLICATIONS
   The MDMESH™ family is very suitable for increasing
   POWER density of high voltage converters allowing
   system miniaturization and higher efficiencies.

Part Name(s) : STE70NM60 E70NM60 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600V - 0.050? - 70A ISOTOP ZENER-PROTECTED MDMESH? POWER MOSFET View

DESCRIPTION
The MDMESH™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s POWERMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

■ TYPICAL RDS(on) = 0.050Ω
■ HIGH dv/dt AND AVALANCHE CAPABILITIES
■ IMPROVED ESD CAPABILITY
■ LOW INPUT CAPACITANCE AND GATE CHARGE
■ LOW GATE INPUT RESISTANCE
■ TIGHT PROCESS CONTROL
■ INDUSTRY’S LOWEST ON-RESISTANCE

APPLICATIONS
    The MDMESH™ family is very suitable for increasing POWER density of high voltage converters allowing system miniaturization and higher efficiencies.

Part Name(s) : STB10N60M2 STD10N60M2 STP10N60M2 STU10N60M2 10N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.550 ? typ., 7.5 A MDMESH II Plus? low Qg POWER MOSFETs in DPAK, DPAK, TO-220 and IPAK packages View

Description
These devices are N-CHANNEL POWER MOSFETs developed using a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
ZENER-PROTECTED

Applications
• Switching applications

Part Name(s) : STD7N80K5 STP7N80K5 STU7N80K5 7N80K5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800 V, 0.95 ? typ., 6 A ZENER-PROTECTED SuperMESH? 5 POWER MOSFETs in DPAK, TO-220 and IPAK packages View

Description
These N-CHANNEL ZENER-PROTECTED POWER MOSFETs are designed using ST’s revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology, based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior POWER density and high efficiency.

Features
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
ZENER-PROTECTED

Applications
• Switching applications

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