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Part Name(s) : P16NS25 STP16NS25 STP16NS25FP ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 250V - 0.23? - 16A TO-220 / TO-220FP MESH OVERLAY? MOSFET View

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.

■ TYPICAL RDS(on) = 0.23 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
■ IDEAL FOR MONITOR’s B+ FUNCTION

 

Part Name(s) : P16NS25 STP16NS25 STP16NS25FP ETC
Unspecified
Description : N-CHANNEL 250V - 0.23? - 16A TO-220 / TO-220FP MESH OVERLAY? MOSFET View

[STMicroelectronics]

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.

■ TYPICAL RDS(on) = 0.23 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT
■ IDEAL FOR MONITOR’s B+ FUNCTION

 

Part Name(s) : STP8NS25 STP8NS25FP ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 250V - 0.38? - 8A TO-220/TO-220FP MESH OVERLAY? MOSFET View

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.

■ TYPICAL RDS(on) = 0.38 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-DC CONVERTERS FOR TELECOM,
   INDUSTRIAL, AND LIGHTING EQUIPMENT

Part Name(s) : IRF630M IRF630MFP ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 200V - 0.35?- 9A - TO-220 /TO-220FP MESH OVERLAY? Power MOSFET View

Description
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB’s.

■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Gate charge minimized

Applications
■ Switching application


Part Name(s) : IRF640 IRF640FP ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL 200V - 0.150? - 18A TO-220/TO-220FP MESH OVERLAY MOSFET View

DESCRIPTION
This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

■ TYPICAL RDS(on) = 0.150 Ω
■ EXTREMELY HIGH dV/dt CAPABILITY
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC/DC COVERTERS FOR TELECOM,
   INDUSTRIAL, AND LIGHTING EQUIPMENT.

Part Name(s) : IRF634 IRF634FP IRF634 IRF634FP ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 250V - 0.38? - 8A TO-220/TO-220FP MESH OVERLAY? Power MOSFET View

DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.

■ TYPICAL RDS(on) = 0.38 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-DC CONVERTERS FOR TELECOM,
   INDUSTRIAL, AND LIGHTING EQUIPMENT
■ IDEAL FOR MONITOR’s B+ FUNCTION

Part Name(s) : STB22NS25Z STP22NS25Z B22NS25Z P22NS25Z ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 250V - 0.13? - 22A - TO-220 / D2PAK Zener-protected MESH OVERLAY? Power MOSFET View

Description
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.

■ 100% avalanche tested
■ Extremely high dv/dt capability

Applications
■ Switching application

Part Name(s) : STP16NB25 STP16NB25FP ST-Microelectronics
STMicroelectronics
Description : N - CHANNEL 250V - 0.220? - 16A - TO-220/TO-220FP PowerMESH? MOSFET View

DESCRIPTION
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

■ TYPICAL RDS(on) = 0.220 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ UNINTERRUPTIBLE POWER SUPPLY (UPS)
■ DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT

Part Name(s) : IRF640T ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 200V - 0.15? - 15A - TO-220 MESH OVERLAY? Power MOSFET View

Description
This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources

General features
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances

Applications
■ Switching application

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