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Part Name(s) : MRF151A MACOM
Tyco Electronics
Description : The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET View

The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET

Part Name(s) : 3N209 Motorola
Motorola => Freescale
Description : DUAL-GATE MOSFET, DUAL-GATE MOSFET UHF COMMUNICAIONS View

3N204, 3N205 - DUAL-GATE MOSFET

3N209 - DUAL-GATE MOSFET UHF COMMUNICAIONS

 

Part Name(s) : VEC2814 SANYO
SANYO -> Panasonic
Description : MOSFET : N-Channel Silicon MOSFET/SBD : Schottky Barrier Diode View

General-Purpose Switching Device Applications

Features
• DC / DC converter.
• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.

• [MOSFET]
• 1.8V drive.

• [SBD]
• Short reverse recovery time.
• Low forward voltage.

Part Name(s) : VEC2820 SANYO
SANYO -> Panasonic
Description : MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode View

General-Purpose Switching Device Applications

Features
• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one
package facilitating high-density mounting.

• [MOSFET]
• Low ON-resistance.
• 1.8V drive.

• [SBD]
• Short reverse recovery time.
• Low forward voltage.


Part Name(s) : VEC2811 SANYO
SANYO -> Panasonic
Description : MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode View

Features
• DC/DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.

• [MOSFET]
• Low ON-resistance.
• 4V drive.

• [SBD]
• Short reverse recovery time.
• Low forward voltage.

Part Name(s) : VEC2803 SANYO
SANYO -> Panasonic
Description : MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode View

General-Purpose Switching Device Applications

Features
• DC/DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.

[MOSFET]
• Low ON-resistance.
• 4V drive.

[SBD]
• Short reverse recovery time.
• Low forward voltage.

Part Name(s) : VEC2801 SANYO
SANYO -> Panasonic
Description : MOSFET : P-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode View

General-Purpose Switching Device Applications

Features
• The best suited for DC / DC converter.
• Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting.

[MOSFET]
• Low ON-resistance.
• 1.8V drive.

[SBD]
• Short reverse recovery time.
• Low forward voltage.

Part Name(s) : VEC2812 SANYO
SANYO -> Panasonic
Description : MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode View

General-Purpose Switching Device Applications

Features
• DC / DC converter.
• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.

• [MOSFET]
• Low ON-resistance.
• 1.8V drive.

• [SBD]
• Short reverse recovery time.
• Low forward voltage.

Part Name(s) : VEC2813 SANYO
SANYO -> Panasonic
Description : MOSFET : N-Channel Silicon MOSFET/ SBD : Schottky Barrier Diode View

General-Purpose Switching Device Applications

Features
• DC / DC converter.
• Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.

• [MOSFET]
• Low ON-resistance.
• 1.8V drive.

• [SBD]
• Short reverse recovery time.
• Low forward voltage.

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