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Part Name(s) : 2SJ424 2SJ425 2SJ426 2SK1177 2SK1178 2SK1179 2SK1180 2SK1181 2SK1183 2SK1184 2SK1185 2SK1186 2SK1187 2SK1188 2SK1189 2SK1190 2SK1191 2SK1192 2SK1193 2SK1367 2SK1368 2SK1369 2SK1370 2SK1711 2SK1712 SANKEN
Sanken Electric co.,ltd.
Description : MOS FET (2SK1177 THRU 2SK3460) View

Sanken / MOS FET ( 2SK1177 THRU 2SK3460)

Part Name(s) : UPA603T NEC
NEC => Renesas Technology
Description : P-CHANNEL MOS FET (6-PIN 2 CIRCUITS) View

P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)

The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.

FEATURES
• Two MOS FET circuits in package the same size as SC-59
• Complement to µPA602T
• Automatic mounting supported

Part Name(s) : K1484 NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FET FOR SWITCHING View

The 2SK1484, N-channel vertical type MOS FET, is a switching device which can be drvien directly by the output of ICs having a 5V power source.

 

As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators such as motors, relays, and solenoids.

 

Part Name(s) : 2SK1592-T K1592 NEC
NEC => Renesas Technology
Description : N-channel MOS FET View

The 2SK1592, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having 5V power source.

As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitble for driving actuators such as motors, relays, and solenoids.

 


Part Name(s) : J180 NEC
NEC => Renesas Technology
Description : P-Channel MOS FET / HIGH-SPEED SWITCHING View

The 2SJ180, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5V power source.

 

As the MOS FET has low on-state resistance and excellent switching characteristtics, it is suitable for driving actuators such as motors, relays, and solenoids.

 

Part Name(s) : UM6K1 UM6K1N UM6K1NTN ROHM
ROHM Semiconductor
Description : 2.5V Drive Nch+Nch MOS FET View

2.5V Drive Nch+Nch MOS FET

Features
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.

Structure
Silicon N-channel MOS FET

Applications
Interfacing, switching (30V, 100mA)

Part Name(s) : RSR025N03TL ROHM
ROHM Semiconductor
Description : 4V Drive Nch MOS FET View

4V Drive Nch MOS FET

Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3) .

Application
Power switching, DC / DC converter.

Structure
Silicon N-channel
MOS FET

Part Name(s) : RSR020P03 ROHM
ROHM Semiconductor
Description : 4V Drive Pch MOS FET View

4V Drive Pch MOS FET

Features
1) Low On-resistance
2) Space saving−small surface mount package (TSMT3)
3) 4V drive

Applications
Switching

Structure
Silicon P-channel MOS FET

Part Name(s) : RSR020P03 Twtysemi
TY Semiconductor
Description : 4V Drive Pch MOS FET View

4V Drive Pch MOS FET

Features
1) Low On-resistance
2) Space saving−small surface mount package (TSMT3)
3) 4V drive

Applications
Switching

Structure
TY P-channel MOS FET

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