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Part Name(s) : TPD1039S Toshiba
Toshiba
Description : LOW-SIDE SWITCH FOR MOTOR, SOLENOID AND LAMP DRIVE

TPD1039S is a monolithic power IC FOR LOW-SIDE SWITCH.
The IC has a vertical MOSFET output which can be directly DRIVEn from a CMOS or TTL logic circuit (e.g., an MPU). The IC offers intelligent self-protection functions.

Features
• A monolithic power IC with a new structure combining a
   control block AND a vertical power MOSFET (π-MOS) on a single chip.
• Can directly DRIVE a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage, overheat, AND overcurrent.
• Low ON-resistance: RDS (ON) = 0.25 Ω (max) (@VIN = 5 V, Tch = 25°C)
• Package TO-92 (MOD) can be packed in tape.

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Part Name(s) : TPD1030 TPD1030F Toshiba
Toshiba
Description : 2-IN-1 LOW-SIDE SWITCH FOR MOTOR, SOLENOID AND LAMP DRIVE

The TPD1030F is a 2-IN-1 LOW-SIDE SWITCH. The IC has a vertical MOSFET output which can be directly
DRIVEn from a CMOS or TTL logic circuit (e.g., an MPU). The IC is equipped with intelligent self-protection functions.

Features
•  Two built-in power IC chips with a new structure combining a control block AND a vertical power MOSFET (L2-π-MOS) on each chip.
•  Can directly DRIVE a power load from a CMOS or TTL logic.
•  Built-in protection circuits against overvoltage (active cLAMP),overtemperature (thermal shutdown), AND overcurrent (current limiter).
•  Low Drain-Source ON-resistance: RDS (ON) =0.6 Ω(max) (@VIN =5 V, ID =0.5 A, Tch =25°C)
•  Low Leakage Current: IDSS =10 μA (max) (@VIN =0 V, VDS =30 V, Tch =25°C)
•  Low Input Current: IIN =300 μA (max) (@VIN =5 V, Tch =25°C)
•  8-pin SOP package with embossed-tape packing.

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Part Name(s) : TPD1009S ETC
Unspecified
Description : High-Side Power SWITCH FOR MOTOR, SOLENOID AND LAMP DRIVE Applications

[IPD]

TPD1009S is a monolithic power IC FOR high-side SWITCHes. The IC has a vertical MOSFET output which can be directly DRIVEn from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent self-protection AND diagnostic functions.

Features
● A monolithic power IC with a new structure combining a control block (Bi-CMOS) AND a vertical power MOSFET (π-MOS) on a single chip.
● One side of load can be grounded to a high-side SWITCH.
● Can directly DRIVE a power load from a micriprocessor.
● Built-in protection against thermal shutdown AND load short circuiting.
● Incorporates a diagnosis function that allows diagnosis output to be read externally at load short circuiting, opening, or overtemperature.
● Up to –10 V of counterelectromotive FORce from an L load can be applied.
● Low ON-resistance: RON = 60 mΩ (max)
● Low operating current: IDD = 1 mA (typ.) (@ VDD = 12 V, VIN = 0 V)
● 5-pin TO-220 insulated package
● Three stANDard lead configurations

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Part Name(s) : INT202PFI1 INT202PFI2 INT202TFI1 INT202TFI2 INT202 Power-Integrations
Power Integrations, Inc
Description : LOW-SIDE DRIVE AND High-side Control FOR Simultaneous Conduction

Description
The INT202 LOW-SIDE DRIVEr IC provides gate DRIVE FOR an external LOW-SIDE MOSFET SWITCH AND high-side level shifting. When used in conjunction with the INT201 high-side DRIVEr, the INT202 provides a simple, cost-effective interface between low-voltage control logic AND high-voltage loads. The INT202 is designed to be used with rectified 110 V or 220 V supplies. Both high side AND low side SWITCHes can be controlled independently from ground-referenced 5 V logic inputs on the low side DRIVEr.

Product Highlights
5 V CMOS Compatible Control Inputs
• Combines logic inputs FOR low AND high-side DRIVEs
• Schmidt-triggered inputs FOR noise immunity

Built-in High-voltage Level Shifters
• Integrated level shifters simplify high-side interface
• Can withstAND up to 800 V FOR direct interface to the INT201 high-side DRIVEr
• Pulsed high-voltage level shifters reduce power consumption

Gate DRIVE Output FOR an External MOSFET
• Provides 300 mA sink/150 mA source current
• Can DRIVE MOSFET gate at up to 15 V
• External MOSFET allows flexibility in design FOR various MOTOR sizes

Built-in Protection Features
• UV lockout

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Part Name(s) : INT200 INT200PFI1 INT200TFI1 INT200PFI2 INT200TFI2 Power-Integrations
Power Integrations, Inc
Description : LOW-SIDE DRIVE AND High-side Control with Simultaneous Conduction Lockout

Description
The INT200 LOW-SIDE DRIVEr IC provides gate DRIVE FOR an external LOW-SIDE MOSFET SWITCH AND high-side level shifting. When used in conjunction with the INT201 high-side DRIVEr, the INT200 provides a simple, cost-effective interface between low-voltage control logic AND high-voltage loads. The INT200 is designed to be used with rectified 110 V or 220 V supplies. Both high-side AND LOW-SIDE SWITCHes can be controlled independently from ground-referenced 5 V logic inputs on the low side DRIVEr.

Product Highlights
5 V CMOS Compatible Control Inputs
• Combines logic inputs FOR low AND high-side DRIVEs
• Schmidt-triggered inputs FOR noise immunity

Built-in High-voltage Level Shifters
• Integrated level shifters simplify high-side interface
• Can withstAND up to 800 V FOR direct interface to the INT201 high-side DRIVEr
• Pulsed high-voltage level shifters reduce power consumption

Gate DRIVE Output FOR an External MOSFET
• Provides 300 mA sink/150 mA source current
• Can DRIVE MOSFET gate at up to 15 V
• External MOSFET allows flexibility in design FOR various MOTOR sizes

Built-in Protection Features
• Simultaneous conduction lockout protection
• UV lockout

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Part Name(s) : INT100 INT100S Power-Integrations
Power Integrations, Inc
Description : LOW-SIDE AND High-side DRIVE with Simultaneous Conduction Lockout

Description
The INT100 half-bridge DRIVEr IC provides gate DRIVE FOR external LOW-SIDE AND high-side MOSFET SWITCHes. The INT100 provides a simple, cost-effective interface between low-voltage control logic AND high-voltage loads. The INT100 is designed to be used with rectified 110 V or 220 V supplies. Both high side AND LOW-SIDE SWITCHes can be controlled independently from ground-referenced 5 V logic inputs.
Built-in protection logic prevents both SWITCHes from turning on at the same time AND shorting the high voltage supply. Pulsed internal level shifting saves power AND provides enhanced noise immunity. The circuit is powered from a nominal 15 V supply to provide adequate gate DRIVE FOR external N-channel MOSFETs. A floating high-side supply is derived from the low-voltage rail by using a simple bootstrap technique.
Applications FOR the INT100 include MOTOR DRIVEs, electronic ballasts, AND uninterruptible power supplies. Multiple devices can also be used to implement full-bridge AND multi-phase configurations.

Product Highlights
5 V CMOS Compatible Control Inputs
• Combines logic inputs FOR low AND high-side DRIVEs
• Schmidt-triggered inputs FOR noise immunity

Built-in High-voltage Level Shifters
• Can withstAND up to 800 V FOR direct interface to the HV referenced high-side SWITCH
• Pulsed internal high-voltage level shifters reduce power consumption

Gate DRIVE Outputs FOR External MOSFETs
• Provides 300 mA sink/150 mA source current
• Can DRIVE MOSFET gates at up to 15 V
• External MOSFET allows flexibility in design FOR various MOTOR sizes

Built-in Protection Features
• Simultaneous conduction lockout protection
• Undervoltage lockout

 

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Part Name(s) : FAN73901 FAN73901M FAN73901MX Fairchild
Fairchild Semiconductor
Description : High- AND LOW-SIDE, Gate-DRIVE IC

Description
The FAN73901 is a monolithic high- AND LOW-SIDE gate DRIVE IC, which can DRIVE high-speed MOSFETs AND IGBTs that operate up to +600V. It has a buffered output stage with all NMOS transistors designed FOR high pulse current driving capability AND minimum cross-conduction.

Features
„Floating Channels FOR Bootstrap Operation to +600V
„Typically 2.5A/2.5A Sourcing/Sinking Current Driving Capability
„Common-Mode dv/dt Noise Canceling Circuit
„Built-in Under-Voltage Lockout FOR Both Channels
„Matched Propagation Delay FOR Both Channels
„3.3V AND 5V Input Logic Compatible
„Output In-Phase with Input

Applications
„Half-Bridge DRIVEr
„HID LAMP Ballast
„SMPS
„MOTOR DRIVEr

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Part Name(s) : TPD1008SA Toshiba
Toshiba
Description : High-side Power SWITCH FOR MOTORs, SOLENOIDs, AND LAMP DRIVErs

The TPD1008SA is a monolithic power IC FOR high-side SWITCHes. The IC has a vertical MOS FET output which can be directly DRIVEn from a CMOS or TTL logic circuit (e.g., an MPU). The device offers intelligent self-protection AND diagnostic functions.

Features
● A monolithic power IC with a new structure combining a control block (Bi–CMOS) AND a vertical power MOS FET (π–MOS) on a single chip
● One side of load can be grounded to a high-side SWITCH.
● Can directly DRIVE a power load from a microprocessor.
● Built–in protection against thermal shutdown AND load short circuiting
● Incorporates a diagnosis function that allows diagnosis output to be read externally at load short-circuiting, opening, or overtemperature.
● Up to −10V of counter-electromotive FORce from an L load can be applied.
● Low on-resistance : RDS (ON) = 200mΩ (max)
● Low operating current : IDD = 1mA (typ.) (@VDD = 12V, VIN = 0V)
● 5-pin TO−220 insulated package
● Three stANDard lead configurations

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Part Name(s) : TPD1033 TPD1033F Toshiba
Toshiba
Description : High-side Power SWITCH FOR MOTORs, SOLENOIDs, AND LAMP DRIVErs

The TPD1033F is a monolithic power IC FOR high-side SWITCHes. The IC has a vertical MOS FET output that can be directly DRIVEn from a CMOS or TTL logic circuit (e.g., an MPU). The device is equipped with intelligent self-protection AND diagnostic functions.

Features
A monolithic power IC with a new structure combining a control block (Bi-CMOS) AND a vertical power MOS FET (π-MOS) on a single chip
One side of load can be grounded to a high-side SWITCH
Can directly DRIVE a power load from a microprocessor.
Built-in protection against thermal shutdown AND load short-circuiting.
Incorporates a diagnosis function that allows diagnosis output to be read externally in the event of load short-circuiting, opening, or overheating.
Up to -10 V of counterelectromotive FORce from an L load can be applied.
Low on-resistance : RON = 220 mΩ (max)
Low operating current : IDD = 1 mA (typ.), (@VDD = 12 V, VIN = 0 V)
8-pin SOP package FOR surface mounting can be packed in tape.

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Part Name(s) : Q67006-A9206 TLE5216G TLE5226G Infineon
Infineon Technologies
Description : Smart Quad Channel LOW-SIDE SWITCH

Smart Quad Channel LOW-SIDE SWITCH

Features
• Overload protection
• Short circuit protection
• Cascadeable serial diagnostic interface
• Overvoltage protection
• µC compatible input
• Electrostaticdischarge (ESD) protection

Application
• All kinds of resistive AND inductive loads (relays, electromagnetic valves)
• µC compatible power SWITCH FOR 12 V applications
SOLENOID control SWITCH in automotive AND industrial control systems

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