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Part Name(s) : K1069 2SK1069 SANYO
SANYO -> Panasonic
Description : LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS View

N-Channel Junction Silicon FET

Features
• Adoption of FBET process.
• Ultrasmall-sized package permitting 2SK1069-applied sets to be made smaller and slimmer.

APPLICATIONS
LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIERs.
• Ideal for use in variable resistors, analog switches, LOW-FREQUENCY AMPLIFIERs, and constant-current circuits.

Part Name(s) : 2SC3071 SANYO
SANYO -> Panasonic
Description : High hFE, LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS View

Features
· High DC current gain (hFE=500 to 2000).
· High breakdown voltage (VCEO≥100V).
· Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
· High VEBO(VEBO≥15V).

APPLICATIONS
· LOW-FREQUENCY, GENERAL-PURPOSE AMPLIFIER., various drivers, muting circuit.

Part Name(s) : 2SC3068 C3060 C3068 SANYO
SANYO -> Panasonic
Description : High hFE, LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS View

NPN Epitaxial Planar Silicon Transistor

Features
· High DC current gain (hFE=800 to 3200).
· Large current capacity.
· Low collector-to-emitter saturation voltage
   (VCE(sat)=0.5V max).
· High VEBO (VEBO≥15V).

APPLICATIONS
· LOW-FREQUENCY, GENERAL-PURPOSE AMPLIFIER., various drivers, muting circuit.

 

Part Name(s) : 2SA1688 A1688 SANYO
SANYO -> Panasonic
Description : High-Frequency GENERAL-PURPOSE AMPLIFIER APPLICATIONS View

High-Frequency GENERAL-PURPOSE AMPLIFIER APPLICATIONS

Features
· High power gain : PG=22dB typ (f=100MHz).
· Very small-sized package permitting 2SA1688-applied sets to be made small and slim.

APPLICATIONS
· Ideally suited for use in FM RF AMPLIFIERs, mixers, oscillators. converters, and IF AMPLIFIERs.


Part Name(s) : 2SC3808 C3808 SANYO
SANYO -> Panasonic
Description : NPN Epitaxial Planar Silicon Transistor / High hFE, LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS View

APPLICATIONS
· Low frequency GENERAL-PURPOSE AMPLIFIERs, drivers.

Features
· Large current capacity (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V).
· High VEBO(VEBO≥15V).

 

 

Part Name(s) : 2SC3807 C3807 SANYO
SANYO -> Panasonic
Description : High hFE, LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS / Large current capacity (IC=2A) View

APPLICATIONS
· Low frequency GENERAL-PURPOSE AMPLIFIERs, drivers.

Features
· Large current capacity (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
· High VEBO(VEBO≥15V).

Part Name(s) : K771 2SK771 SANYO
SANYO -> Panasonic
Description : LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS View

Features
• Adoption of FBET process.
• Ultrasmall-sized package permitting sets to be made smaller and slimmer.

APPLICATIONS
• Variable resistors, analog switches, AF AMPLIFIER, constant-current circuit.

Part Name(s) : 2SC3792 SANYO
SANYO -> Panasonic
Description : NPN Epitaxial Planar Silicon Transistor High hFE, Low Frequency GENERAL-PURPOSE Amp APPLICATIONS View

 NPN Epitaxial Planar Silicon Transistor High hFE, Low Frequency GENERAL-PURPOSE Amp APPLICATIONS

Part Name(s) : 2SA1881 2SC4983 A1881 C4983 SANYO
SANYO -> Panasonic
Description : LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS View

PNP/NPN Epitaxial Planar Silicon Transistor

Features
• AF power AMPLIFIER, medium-speed switching, small sized motor drivers and LED drivers.
• Large current capacity.
• Low collector-to-emitter saturation voltage.
• Very small-sized pakage permitting 2SA1881/2SC4983-appied set to be made smaller and slimmer.

 

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