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Part Name(s) : EFA072A
Excelics
Excelics Semiconductor, Inc.
Description : Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

• +25.0dBm TYPICAL OUTPUT Power
• 10.0dB TYPICAL Power GAIN AT 12GHz
• 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH Power EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 15mA PER BIN RANGE

Part Name(s) : EFA120A
Excelics
Excelics Semiconductor, Inc.
Description : Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

• +28.0dBm TYPICAL OUTPUT Power
• 9.5dB TYPICAL Power GAIN AT 12GHz
• 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH Power EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 20mA PER BIN RANGE

Part Name(s) : EFA080A
Excelics
Excelics Semiconductor, Inc.
Description : Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

• +26.0dBm TYPICAL OUTPUT Power
• 10.0dB TYPICAL Power GAIN AT 12GHz
• 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH Power EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 15mA PER BIN RANGE

Part Name(s) : EFA160A
Excelics
Excelics Semiconductor, Inc.
Description : Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

• +29.0dBm TYPICAL OUTPUT Power
• 9.0dB TYPICAL Power GAIN AT 12GHz
• 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH Power EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 30mA PER BIN RANGE

Part Name(s) : EFA040A
Excelics
Excelics Semiconductor, Inc.
Description : Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

• +23.0dBm TYPICAL OUTPUT Power
• 10.5 dB TYPICAL Power GAIN AT 12GHz
• 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH Power EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 10mA PER BIN RANGE

Part Name(s) : EFA072A
ETC
Unspecified
Description : Low Distortion GaAs Power FET

[Excelics]

Low Distortion GaAs Power FET

• +25.0dBm TYPICAL OUTPUT Power
• 10.0dB TYPICAL Power GAIN AT 12GHz
• 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH Power EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 15mA PER BIN RANGE

Part Name(s) : EFA080A
ETC
Unspecified
Description : Low Distortion GaAs Power FET

[Excelics]

Low Distortion GaAs Power FET

• +26.0dBm TYPICAL OUTPUT Power
• 10.0dB TYPICAL Power GAIN AT 12GHz
• 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH Power EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 15mA PER BIN RANGE

Part Name(s) : EFA960B
Excelics
Excelics Semiconductor, Inc.
Description : Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

• +36.5dBm TYPICAL OUTPUT Power
• 16.0dB TYPICAL Power GAIN AT 2GHz
• 0.5 X 9600 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH Power EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 160mA PER BIN RANGE

Part Name(s) : EFA480C
Excelics
Excelics Semiconductor, Inc.
Description : Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

• +34.0dBm TYPICAL OUTPUT Power
• 18.0dB TYPICAL Power GAIN AT 2GHz
• 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH Power EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 80mA PER BIN RANGE

Part Name(s) : EFA720A
Excelics
Excelics Semiconductor, Inc.
Description : Low Distortion GaAs Power FET

Low Distortion GaAs Power FET

• +35.5dBm TYPICAL OUTPUT Power
• 17.5dB TYPICAL Power GAIN AT 2GHz
• 0.5 X 7200 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION AND PLATED HEAT SINK
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH Power EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 120mA PER BIN RANGE

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