General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES
• VDSS=600V, ID=11A
• Drain-Source ON Resistance :
RDS(ON)(Max)=0.38Ω @VGS=10V
• Qg(typ.)= 20nC
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.
FEATURES
• VDSS=600V, ID=11A
• Drain-Source ON Resistance : RDS(ON)(Max)=0.38Ω @VGS=10V
• Qg(typ.)= 20nC
MOS FIELD EFFECT TRANSISTOR
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2139 is N-CHANNEL Power MOS FIELD EFFECT TRANSISTOR designed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on)= 1.5 ΩMAX. (VGS= 10 V, ID= 2.5 A)
• Low CissCiss= 930 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 (MP-45F) Package
MOS FIELD EFFECT TRANSISTORS
DUAL MOS FIELD EFFECT TRANSISTORS WITH CHANNEL P
JUNCTION FIELD EFFECT TRANSISTORS WITH CHANNEL N FOR VERY HIGH SPEED CIRCUITS AND CHOPPERS
DESCRIPTION
This device is a special tangential FIELD difference sensor with two AMR (Anisotropic Magneto-Resistive) bridges for FIELD movement measurements or FIELD comparative measurements.
The ZMX40M contains two extremely sensitive magnetic sensor chips, mounted parallel to each other in an SM8 package, employing the magneto-resistive EFFECT of thin film permalloy. It allows the measurement of magnetic FIELDs or the detection of magnetic parts. The sensors each consist of a chip covered with thin film permalloy stripes which form a Wheatstone bridge, whose output voltage is proportional to the magnetic FIELD component Hy. A FIELD Hx, which is perpendicular to Hy, is necessary to suppress the hysteresis and to bias the sensors into the linear region. This FIELD Hx is provided by an internal permanent magnet.
FEATURES
• Output voltage proportional to magnetic FIELD Hy
across each chip
• Both chips are in the same orientation and chip
centres are 3mm apart in Y direction
• Magnetic FIELDs vertical to the chip level Hz are not
EFFECTive
• Disturbing FIELDs Hx up to 30 kA/m are allowed
• Extremely small chip distance from the top side of
package for accurate measurement
• Internal magnet each chip for creation of auxiliary
FIELD Hx
APPLICATIONS
• Linear position measurement for process control,
door interlocks, proximity detectors and precision
machine tools
• H-FIELD movement measurement for a magnetic
tape recognition
• High voltage isolated current measurement up to
many amps range by using a suitable current loop
over or under the IC
• Detection of rotating magnets in the presence of a
disturbing FIELD by comparisons of maximum
values of individual sensors
The 2SK2413 is N-CHANNEL MOS FIELD EFFECT TRANSISTOR designed for high speed switching applications.
• Low On-Resistance
RDS(on)1= 70 mΩMAX. (@ VGS= 10 V, ID= 5.0 A)
RDS(on)2= 95 mΩMAX. (@ VGS= 4 V, ID= 5.0 A)
• Low CissCiss= 860 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
INTRODUCTION
There are two types of FIELD-EFFECT TRANSISTORs, the Junction FIELD-EFFECT TRANSISTOR (JFET) and the “Metal-Oxide Semiconductor” FIELD-EFFECT TRANSISTOR (MOSFET), or Insulated-Gate FIELD-EFFECT TRANSISTOR (IGFET). The principles on which these devices operate (current controlled by an electric FIELD) are very similar — the primary difference being in the methods by which the control element is made. This difference, however, results in a considerable difference in device characteristics and necessitates variances in circuit design, which are discussed in this note.
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications
• Low drain-source ON resistance : P CHANNEL RDS (ON) = 25 mΩ (typ.)
N CHANNEL RDS (ON) = 20 mΩ (typ.)
• High forward transfer admittance : P CHANNEL |Yfs| = 12S (typ.)
N CHANNEL |Yfs| = 14S (typ.)
• Low leakage current : P CHANNEL IDSS = −10 μA (VDS = −30 V)
N CHANNEL IDSS = 10 μA (VDS = 30 V)
• Enhancement-mode
: P CHANNEL Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
N CHANNEL Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type (π-MOS VI)
Chopper Regulator, DC-DC Converter and Motor Drive Applications
• Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 38 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 30 V)
• Enhancement-mode: Vth= 1.5 to 3.0 V (VDS= 10 V, ID= 1 mA)
FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type(L2-π-MOS III)
High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications
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