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Part Name(s) : 2SK699 K699 NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR View

N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

Part Name(s) : 2SK773 K773 NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR View

N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

Part Name(s) : 2SK1348 K1348 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type(L2-?-MOS III) View

FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type(L2-π-MOS III)

High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

Part Name(s) : 2SJ461 NEC
NEC => Renesas Technology
Description : P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING View

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING


Part Name(s) : 2SK2413 K2413 NEC
NEC => Renesas Technology
Description : MOS FIELD EFFECT TRANSISTOR / N-CHANNEL MOS FIELD EFFECT TRANSISTOR View

The 2SK2413 is N-CHANNEL MOS FIELD EFFECT TRANSISTOR designed for high speed switching applications.

 

• Low On-Resistance
  RDS(on)1= 70 mΩMAX. (@ VGS= 10 V, ID= 5.0 A)
  RDS(on)2= 95 mΩMAX. (@ VGS= 4 V, ID= 5.0 A)

• Low CissCiss= 860 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

Part Name(s) : 2SK2498 K2498 NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FIELD EFFECT TRANSISTOR View

2SK2498 is N-CHANNEL MOS FIELD EFFECT TRANSISTOR designed for high current switching applications.

Part Name(s) : 2SK591 NEC
NEC => Renesas Technology
Description : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR View

The 2SK591 is N-CHANNEL MOS FIELD EFFECT Power TRANSISTOR designed for solenoid, motor and lamp driver.

 

Part Name(s) : 2SK3127 K3127 Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type (?-MOS VI) View

FIELD EFFECT TRANSISTOR   Silicon N CHANNEL MOS Type (π-MOS VI)
Chopper Regulator, DC-DC Converter and Motor Drive Applications

• Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 38 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 30 V)
• Enhancement-mode: Vth= 1.5 to 3.0 V (VDS= 10 V, ID= 1 mA)

Part Name(s) : 2SJ134 NEC
NEC => Renesas Technology
Description : MOS FIELD EFFECT TRANSISTOR View

MOS FIELD EFFECT TRANSISTOR

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