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Part Name(s) : 2SK699 K699	NEC => Renesas Technology
Description : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR	View
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

Part Name(s) : 2SK773 K773	NEC => Renesas Technology
Description : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR	View
N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

Part Name(s) : 2SK1348 K1348	Toshiba
Description : FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type(L2-?-MOS III)	View
FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type(L2-π-MOS III) High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications

Part Name(s) : 2SJ461	NEC => Renesas Technology
Description : P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING	View
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

Part Name(s) : 2SK2413 K2413	NEC => Renesas Technology
Description : MOS FIELD EFFECT TRANSISTOR / N-CHANNEL MOS FIELD EFFECT TRANSISTOR	View
The 2SK2413 is N-CHANNEL MOS FIELD EFFECT TRANSISTOR designed for high speed switching applications. • Low On-Resistance RDS(on)1= 70 mΩMAX. (@ VGS= 10 V, ID= 5.0 A) RDS(on)2= 95 mΩMAX. (@ VGS= 4 V, ID= 5.0 A) • Low CissCiss= 860 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings

Part Name(s) : 2SK2498 K2498	NEC => Renesas Technology
Description : N-CHANNEL MOS FIELD EFFECT TRANSISTOR	View
2SK2498 is N-CHANNEL MOS FIELD EFFECT TRANSISTOR designed for high current switching applications.

Part Name(s) : 2SK591	NEC => Renesas Technology
Description : N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR	View
The 2SK591 is N-CHANNEL MOS FIELD EFFECT Power TRANSISTOR designed for solenoid, motor and lamp driver.

Part Name(s) : 2SK3127 K3127	Toshiba
Description : FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type (?-MOS VI)	View
FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type (π-MOS VI) Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.) • High forward transfer admittance: \|Yfs\| = 38 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 30 V) • Enhancement-mode: Vth= 1.5 to 3.0 V (VDS= 10 V, ID= 1 mA)

Part Name(s) : 2SJ134	NEC => Renesas Technology
Description : MOS FIELD EFFECT TRANSISTOR	View
MOS FIELD EFFECT TRANSISTOR

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