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Part Name(s) : KP11N60 KP11N60F
KEC
KEC
Description : N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

FEATURES
• VDSS=600V, ID=11A
• Drain-Source ON Resistance :
   RDS(ON)(Max)=0.38Ω @VGS=10V
• Qg(typ.)= 20nC

Part Name(s) : KP11N60D
KEC
KEC
Description : N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

FEATURES
• VDSS=600V, ID=11A
• Drain-Source ON Resistance : RDS(ON)(Max)=0.38Ω @VGS=10V
• Qg(typ.)= 20nC

Part Name(s) : 2K2139 K2139
NEC
NEC => Renesas Technology
Description : MOS FIELD EFFECT TRANSISTOR

MOS FIELD EFFECT TRANSISTOR
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION
The 2SK2139 is N-CHANNEL Power MOS FIELD EFFECT TRANSISTOR designed for high voltage switching applications.

FEATURES
• Low On-Resistance
  RDS(on)= 1.5 ΩMAX. (VGS= 10 V, ID= 2.5 A)
• Low CissCiss= 930 pF TYP.
• High Avalanche Capability Ratings
• Isolate TO-220 (MP-45F) Package

Description : MOS FIELD EFFECT TRANSISTORS

MOS FIELD EFFECT TRANSISTORS

DUAL MOS FIELD EFFECT TRANSISTORS WITH CHANNEL P

JUNCTION FIELD EFFECT TRANSISTORS WITH CHANNEL N FOR VERY HIGH SPEED CIRCUITS AND CHOPPERS

Zetex
Zetex => Diodes
Description : DUAL MAGNETIC FIELD SENSOR

DESCRIPTION
This device is a special tangential FIELD difference sensor with two AMR (Anisotropic Magneto-Resistive) bridges for FIELD movement measurements or FIELD comparative measurements.
The ZMX40M contains two extremely sensitive magnetic sensor chips, mounted parallel to each other in an SM8 package, employing the magneto-resistive EFFECT of thin film permalloy. It allows the measurement of magnetic FIELDs or the detection of magnetic parts. The sensors each consist of a chip covered with thin film permalloy stripes which form a Wheatstone bridge, whose output voltage is proportional to the magnetic FIELD component Hy. A FIELD Hx, which is perpendicular to Hy, is necessary to suppress the hysteresis and to bias the sensors into the linear region. This FIELD Hx is provided by an internal permanent magnet.

FEATURES
• Output voltage proportional to magnetic FIELD Hy
   across each chip
• Both chips are in the same orientation and chip
   centres are 3mm apart in Y direction
• Magnetic FIELDs vertical to the chip level Hz are not
   EFFECTive
• Disturbing FIELDs Hx up to 30 kA/m are allowed
• Extremely small chip distance from the top side of
   package for accurate measurement
• Internal magnet each chip for creation of auxiliary
   FIELD Hx

APPLICATIONS
• Linear position measurement for process control,
   door interlocks, proximity detectors and precision
   machine tools
• H-FIELD movement measurement for a magnetic
   tape recognition
• High voltage isolated current measurement up to
   many amps range by using a suitable current loop
   over or under the IC
• Detection of rotating magnets in the presence of a
   disturbing FIELD by comparisons of maximum
   values of individual sensors

Part Name(s) : K2413
NEC
NEC => Renesas Technology
Description : MOS FIELD EFFECT TRANSISTOR / N-CHANNEL MOS FIELD EFFECT TRANSISTOR

The 2SK2413 is N-CHANNEL MOS FIELD EFFECT TRANSISTOR designed for high speed switching applications.

 

• Low On-Resistance
  RDS(on)1= 70 mΩMAX. (@ VGS= 10 V, ID= 5.0 A)
  RDS(on)2= 95 mΩMAX. (@ VGS= 4 V, ID= 5.0 A)

• Low CissCiss= 860 pF TYP.

• Built-in G-S Gate Protection Diodes

• High Avalanche Capability Ratings

Part Name(s) : AN211A
Motorola
Motorola => Freescale
Description : Fifeld EFFECT TRANSISTORs in Theory and Practice

INTRODUCTION
There are two types of FIELD-EFFECT TRANSISTORs, the Junction FIELD-EFFECT TRANSISTOR (JFET) and the “Metal-Oxide Semiconductor” FIELD-EFFECT TRANSISTOR (MOSFET), or Insulated-Gate FIELD-EFFECT TRANSISTOR (IGFET). The principles on which these devices operate (current controlled by an electric FIELD) are very similar — the primary difference being in the methods by which the control element is made. This difference, however, results in a considerable difference in device characteristics and necessitates variances in circuit design, which are discussed in this note.

Part Name(s) : TPC8405
Toshiba
Toshiba
Description : TOSHIBA FIELD EFFECT TRANSISTOR Silicon N, P CHANNEL MOS Type (P CHANNEL U−MOS IV/N CHANNEL U-MOS III)

Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications

• Low drain-source ON resistance : P CHANNEL RDS (ON) = 25 mΩ (typ.)
                                                         N CHANNEL RDS (ON) = 20 mΩ (typ.)
• High forward transfer admittance : P CHANNEL |Yfs| = 12S (typ.)
                                                         N CHANNEL |Yfs| = 14S (typ.)
• Low leakage current : P CHANNEL IDSS = −10 μA (VDS = −30 V)
                                      N CHANNEL IDSS = 10 μA (VDS = 30 V)
• Enhancement-mode
   : P CHANNEL Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
     N CHANNEL Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Part Name(s) : 2SK3127 K3127
Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type (π-MOS VI)

FIELD EFFECT TRANSISTOR   Silicon N CHANNEL MOS Type (π-MOS VI)
Chopper Regulator, DC-DC Converter and Motor Drive Applications

• Low drain-source ON resistance: RDS (ON)= 9.5 mΩ(typ.)
• High forward transfer admittance: |Yfs| = 38 S (typ.)
• Low leakage current: IDSS= 100 μA (max) (VDS= 30 V)
• Enhancement-mode: Vth= 1.5 to 3.0 V (VDS= 10 V, ID= 1 mA)

Part Name(s) : 2SK1348 K1348
Toshiba
Toshiba
Description : FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type(L2-π-MOS III)

FIELD EFFECT TRANSISTOR Silicon N CHANNEL MOS Type(L2-π-MOS III)

High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications


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