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Part Name(s) : 2N2757 2N2758 2N2759 2N2760 2N2761 2N2762 2N2763 2N2764 2N2765 2N2766 2N2767 2N2768 2N2769 2N2770 2N2771 2N2772 2N2773 2N2774 2N2775 2N2776 2N2777 2N2778 NJSEMI
New Jersey Semiconductor
Description : JOINT ELECTRON DEVICE ENGINEERING COUNCIL REGISTRATION DATA SILICON POWER TRANSISTOR POWER SWITCHING

General Description
This TRANSISTOR is a NPN SILICON POWER TRANSISTOR designed primarily for high POWER SWITCHING applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

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Part Name(s) : ST13003 Semtech-Electronics
Semtech Electronics LTD.
Description : HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

NPN SILICON Epitaxial Planar TRANSISTOR 
for POWER SWITCHING and ELECTRON rectifier applications.
The TRANSISTOR is subdivided into one group according to its DC current gain. 

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Part Name(s) : BSR18A CDIL
Continental Device India Limited
Description : SILICON LOW–POWER SWITCHING TRANSISTORS

SILICON LOW–POWER SWITCHING TRANSISTORS

P–N–P SILICON TRANSISTOR

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Part Name(s) : CP10C60 APOLLOELECTRON
Apollo Electron Co., Ltd.
Description : Standard Gate SILICON Controlled Rectifiers

General Description
Apollo Electron’s SCR is suitable for the application where requiring high bidirectional blocking voltage capability and also suit able for over voltage protection, motor control circuit in POWER tool, inrush current limit circuit and heating control system.

Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 12 A )
◆ ISOLATED TYPE

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Part Name(s) : EC2612 EC2612-99F EC2612-99F/00 UMS
United Monolithic Semiconductors
Description : 40GHz Super Low Noise PHEMT Pseudomorphic High ELECTRON Mobility TRANSISTOR

Description
The EC2612 is based on a 0.15µm gate pseudomorphic high ELECTRON mobility TRANSISTOR (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The DEVICE shows a very high transconductance which leads to very high frequency and low noise performances.

Main Features
0.8dB minimum noise figure @ 18GHz
1.5dB minimum noise figure @ 40GHz
12dB associated gain @ 18GHz
9.5dB associated gain @ 40GHz

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Part Name(s) : CSL13003 CSL13003A CSL13003B CSL13003C CSL13003F CSL13003E CDIL
Continental Device India Limited
Description : NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

NPN SILICON PLANAR EPITAXIAL, HIGH SPEED, HIGH VOLTAGE SWITCHING TRANSISTOR

Applications
   Suitable for Lighting, SWITCHING Regulator and Motor Control

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Part Name(s) : BD707 CDIL
Continental Device India Limited
Description : NPN SILICON PLANAR POWER TRANSISTOR

NPN SILICON PLANAR POWER TRANSISTOR

For use in POWER Linear and SWITCHING Applications

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Part Name(s) : TP3420AV309 National-Semiconductor
National ->Texas Instruments
Description : ENGINEERING Project Manager

ENGINEERING Project Manager

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Part Name(s) : TP3054WMX National-Semiconductor
National ->Texas Instruments
Description : ENGINEERING Project Manager

ENGINEERING Project Manager

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Part Name(s) : MMBT4403K Fairchild
Fairchild Semiconductor
Description : PNP Epitaxial SILICON TRANSISTOR SWITCHING TRANSISTOR

PNP Epitaxial SILICON TRANSISTOR

SWITCHING TRANSISTOR

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