P/N + Description + Content Search
Advanced Power Electronics Corp
N-Channel INSULATED GATE BIPOLAR Transistor WITH FRD.
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat)=2.9V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant
Advanced Power Electronics Corp
N-Channel INSULATED GATE BIPOLAR Transistor WITH FRD.
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat)=2.9V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant & Halogen-Free
Siemens AG
IGBT Transistor
Preliminary Data
● VCE 1000 V
● I C 2.5 A
● N channel
● MOS input (voltage-controlled)
● High switch speed
● Very low tail current
● Latch-up free
● Suitable freewheeling diode BAX 280
Infineon Technologies
IGBT Transistor
Preliminary Data
● VCE 1000 V
● I C 2.5 A
● N channel
● MOS input (voltage-controlled)
● High switch speed
● Very low tail current
● Latch-up free
● Suitable freewheeling diode BAX 280
Dynex Semiconductor
The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The GP500LSS06S is a single switch 600V n channel enhancement mode insulated gate bipolar Transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.
FEATURES
■ n - Channel
■ High Switching Speed
■ Low Forward Voltage Drop
■ Isolated Base
APPLICATIONS
■ PWM Motor Control
■ UPS
Dynex Semiconductor
The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar Transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.
FEATURES
■ n - Channel
■ High Switching Speed
■ Low Forward Voltage Drop
■ Isolated Base
APPLICATIONS
■ PWM Motor Control
■ UPS
ON Semiconductor
SMARTDISCRETES Internally Clamped, N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability
Motorola => Freescale
SMARTDISCRETES Internally Clamped, N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability
Motorola => Freescale
SMARTDISCRETES Internally Clamped, N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability
ON Semiconductor
SMARTDISCRETES Internally Clamped, N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability
|
|