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Part Name(s) : 30G120ASW AP30G120ASW
Advanced Power Electronics Corp
Advanced Power Electronics Corp
Description : N-Channel INSULATED GATE BIPOLAR Transistor WITH FRD.

N-Channel INSULATED GATE BIPOLAR Transistor WITH FRD.

Features
▼ High Speed Switching
▼ Low Saturation Voltage
   VCE(sat)=2.9V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant

Part Name(s) : AP30G120ASW-HF
Advanced Power Electronics Corp
Advanced Power Electronics Corp
Description : N-Channel INSULATED GATE BIPOLAR Transistor WITH FRD.

N-Channel INSULATED GATE BIPOLAR Transistor WITH FRD.

Features
▼ High Speed Switching
▼ Low Saturation Voltage
   VCE(sat)=2.9V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant & Halogen-Free

Siemens AG
Siemens AG
Description : IGBT Transistor

IGBT Transistor

Preliminary Data
● VCE 1000 V
● I C 2.5 A
● N channel
● MOS input (voltage-controlled)
● High switch speed
● Very low tail current
● Latch-up free
● Suitable freewheeling diode BAX 280

Infineon Technologies
Infineon Technologies
Description : IGBT Transistor

IGBT Transistor

Preliminary Data
● VCE 1000 V
● I C 2.5 A
● N channel
● MOS input (voltage-controlled)
● High switch speed
● Very low tail current
● Latch-up free
● Suitable freewheeling diode BAX 280

Part Name(s) : GP500LSS06S
Dynex Semiconductor
Dynex Semiconductor
Description : Single Switch IGBT Module

The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The GP500LSS06S is a single switch 600V n channel enhancement mode insulated gate bipolar Transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

FEATURES
■ n - Channel
■ High Switching Speed
■ Low Forward Voltage Drop
■ Isolated Base

APPLICATIONS
■ PWM Motor Control
■ UPS

Part Name(s) : GP350MHB06S
Dynex Semiconductor
Dynex Semiconductor
Description : Half Bridge IGBT Module

The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A.
The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar Transistor (IGBT) module. The module is suitable for a variety of medium voltage applications in motor drives and power conversion.
The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications.

FEATURES
■ n - Channel
■ High Switching Speed
■ Low Forward Voltage Drop
■ Isolated Base

APPLICATIONS
■ PWM Motor Control
■ UPS

Part Name(s) : MGP20N14CL
ON Semiconductor
ON Semiconductor
Description : SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.

• Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability

Part Name(s) : MGP20N14CL
Motorola => Freescale
Motorola => Freescale
Description : SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.

• Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability

Part Name(s) : MGP20N40CL
Motorola => Freescale
Motorola => Freescale
Description : SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.

• Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability

ON Semiconductor
ON Semiconductor
Description : SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.

• Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability

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