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Part Name(s) : PIC18F65J50_09 PIC18F66J50_09 PIC18F66J55_09 PIC18F67J50_09 PIC18F85J50_09 PIC18F86J50_09 PIC18F86J55_09 PIC18F87J50_09 Microchip
Microchip Technology
Description : PIC18F87J50 FAMILY Silicon Errata and DATA SHEET Clarification View

The PIC18F87J50 FAMILY devices that you have received conform functionally to the current Device DATA SHEET (DS39775B), except for the anomalies described in this document.
The silicon issues discussed in the following pages are for silicon revisions with the Device and Revision IDs listed in Table 1. The silicon issues are summarized in Table 2.
The errata described in this document will be addressed in future revisions of the PIC18F87J50 FAMILY silicon.
DATA SHEET clarifications and corrections start on page 5, following the discussion of silicon issues.
The silicon revision level can be identified using the current version of MPLAB® IDE and Microchip’s programmers, debuggers, and emulation tools, which are available at the Microchip corporate web site (DATA-cke-saved-href="//www.microchip.com">www.microchip.com).

For example, to identify the silicon revision level using MPLAB IDE in conjunction with MPLAB ICD 2 or PICkit™ 3:
1. Using the appropriate interface, connect the device to the MPLAB ICD 2 programmer/debugger or PICkit™ 3.
2. From the main menu in MPLAB IDE, select Configure>Select Device, and then select the target part number in the dialog box.
3. Select the MPLAB hardware tool (Debugger>Select Tool).
4. Perform a “Connect” operation to the device (Debugger>Connect). Depending on the devel opment tool used, the part number and Device Revision ID value appear in the Output window.

Part Name(s) : 25LC010A 25LC010A-H 25LC010A-H/SN 25LC010AT-H 25LC010AT-H/SN 25LC020A 25LC020A-H 25LC020A-H/SN 25LC020AT-H 25LC020AT-H/SN 25LC040A-H 25LC040A-H/SN 25LC040AT-H 25LC040AT-H/SN Microchip
Microchip Technology
Description : 1K-4K SPI SERIAL EEPROM HighTemp FAMILY DATA SHEET View

Description:
Microchip Technology Inc. 25LCXXXA* devices are low-density 1 through 4 Kbit SERIAL Electrically Erasable PROMs (EEPROM). The devices are organized in blocks of x8-bit memory and support the SERIAL Peripheral Interface (SPI) compatible SERIAL bus architecture. Byte-level and page-level functions are supported.

Features:
• Max. Clock 5 MHz
• Low-Power CMOS Technology:
- Max. Write Current: 5 mA at 5.5V, 5 MHz
- Read Current: 5 mA at 5.5V, 5 MHz
- Standby Current: 10 μA at 5.5V
• 128 x 8 through 512 x 8-bit Organization
• Byte and Page-level Write Operations
• Self-Timed Erase and Write Cycles (6 ms max.)
• Block Write Protection:
- Protect none, 1/4, 1/2 or all of array
• Built-in Write Protection:
- Power-on/off DATA protection circuitry
- Write enable latch
- Write-protect pin
• Sequential Read
• High Reliability:
- Endurance: >1M erase/write cycles
- DATA retention: > 200 years
- ESD protection: > 4000V
• Temperature Range Supported:
- Extended (H): -40°C to +150°C
• Package is Pb-Free and RoHS Compliant
 

Part Name(s) : BR24E08F BR24C08 BR24C08F BR24C08FJ BR24C08FV BR24C16 BR24C16F BR24C16FJ BR24C16FV BR24E16 BR24E16F BR24E16FJ BR24E16FV ROHM
ROHM Semiconductor
Description : I2C BUS compatible SERIAL EEPROM View

The BR24C08, BR24C16 and BR24E16 series are 2-wire (I2C BUS type) SERIAL EEPROMs which are electrically programmable.

Features
1) 1k x 8 bits SERIAL EEPROM. (BR24C08 / F / FJ / FV) 2k x 8 bits SERIAL EEPROM. (BR24C16 / F / FJ / FV, BR24E16 / F / FJ / FV)
2) Two wire SERIAL interface. (2Byte Address : BR24E16)
3) Operating voltage range : 2.7V∼5.5V
4) Low current consumption
    Active (at 5V) : 2.0mA (Typ.)
    Standby (at 5V) : 1.0µA (Typ.)
5) Auto erase and auto complete functions can be used during write operations.
6) Page write function : 16byte
7) DATA security Write protect feature Inhibit to WRITE at low Vcc
8) Noise filters at SCL and SDA pins.
9) Address can be incremented automatically during read operations.
10) Compact packages.
11) Rewriting possible up to 100,000 times.
12) DATA can be stored for ten years without corruption.

Part Name(s) : BR24C01A-W BR24C01AF-W BR24C01AFJ-W BR24C01AFV-W BR24C02-W BR24C02F-W BR24C02FJ-W BR24C02FV-W BR24C04-W BR24C04F-W BR24C04FJ-W BR24C04FV-W ROHM
ROHM Semiconductor
Description : I2C BUS compatible SERIAL EEPROM View

The BR24C01A-W, BR24C02-W, and BR24C04-W series are 2-wire (I2C BUS type) SERIAL EEPROMs which are electrically programmable.

Features
1) 128×8bits (1k) SERIAL EEPROM.
   (BR24C01A-W / AF-W / AFJ-W / AFV-W)
      256×8bits (2k) SERIAL EEPROM.
   (BR24C02-W / F-W / FJ-W / FV-W)
      512×8bits (4k) SERIAL EEPROM.
   (BR24C04-W / F-W / FJ-W / FV-W)
2) Two wire SERIAL interface.
3) Operating voltage range : 2.7V∼5.5V
4) Low current consumption
   Active (at 5V) : 1.5mA (Typ.)
   Standby (at 5V) : 0.1µA (Typ.)
5) Auto erase and auto complete functions can be used
   during write operations.
6) Page write function.
   BR24C01A-W / AF-W / AFJ-W / AFV-W : 8 bytes
   BR24C02-W / F-W / FJ-W / FV-W : 8 bytes
   BR24C04-W / F-W / FJ-W / FV-W : 16 bytes
7) DATA security
   Write protect feature
   Inhibit to WRITE at low VCC
8) Noise filters at SCL and SDA pins.
9) Address can be incremented automatically during
   read operations.
10) Compact packages.
11) Rewriting possible up to 100,000 times
12) DATA can be stored for ten years without corruption.

Applications
   VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches


Part Name(s) : RX7000 NTE-Electronic
NTE Electronics
Description : MATERIAL SAFETY DATA SHEET View

MATERIAL SAFETY DATA SHEET

Part Name(s) : CAT24C256WI-GT3 CAT24C256WI-G ETC
Unspecified
Description : 256 kb I2C CMOS SERIAL EEPROM View

[ON-Semiconductor]

Description
The CAT24C256 is a 256 kb SERIAL CMOS EEPROM, internally organized as 32,768 words of 8 bits each.
It features a 64−byte page write buffer and supports both the Standard (100 kHz) as well as Fast (400 kHz) I2C protocol.
Write operations can be inhibited by taking the WP pin High (this protects the entire memory).
External address pins make it possible to address up to eight CAT24C256 devices on the same bus.

Features
• Supports Standard and Fast I2C Protocol
• 1.8 V to 5.5 V Supply Voltage Range
• 64−Byte Page Write Buffer
• Hardware Write Protection for Entire Memory
• Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs
   (SCL and SDA)
• Low Power CMOS Technology
• 1,000,000 Program/Erase Cycles
• 100 Year DATA Retention
• Industrial and Extended Temperature Range
• PDIP, SOIC, TSSOP and TDFN 8−lead Packages
• This Device is Pb−Free, Halogen Free/BFR Free, and RoHS
   Compliant

Part Name(s) : BR34L02-W BR34L02FV-WE2 BR34L02FVT-WE2 ROHM
ROHM Semiconductor
Description : 2Kbit SERIAL I2C BUS EEPROM For SPD DRAM Memory Module View

●DESCRIPTION
BR34L02-W is 2Kbit SERIAL I2C BUS Electrically Erasable PROM (based on SERIAL Presence Detect) for DRAM Memory Module


●FEATURES
256×8 bit architecture SERIAL EEPROM
Wide operating voltage range (1.7V~5.5V)
Two wire SERIAL interface
High reliability connection of Au pad and Au wire
Self-Timed Erase and Write Cycle
Page Write Function(16byte)
Write Protect Mode
  Write Protect 1(Onetime Rom)  : 00h~7Fh
  Write Protect 2(Hardwire WP PIN)    :   00h~FFh
Low Power consumption
   Write  ( 5V )  :  1.2mA (Typ.)
   Read  ( 5V )  :  0.2mA(Typ.)
   Standby   ( 5V )  :  0.1μA(Typ.)
DATA security
  Write protect feature (WP pin)
  Inhibit to WRITE at low VCC
Small package ------ SSOP-B8/TSSOP-B8
High reliability fine pattern CMOS technology
Endurance : 1,000,000 erase / write cycles
DATA retention : 40 years
Filtered inputs in SCL / SDA for noise suppression
Initial DATA FFh in all address

Part Name(s) : ST24E64 ST25E64 ST-Microelectronics
STMicroelectronics
Description : SERIAL EXTENDED ADDRESSING COMPATIBLE WITH I2C BUS 64K (8K x 8) EEPROM View

DESCRIPTION
The ST24/25E64 are 64K bit electrically erasable programmable memories (EEPROM), organized as 8 blocks of 1024x 8 bits. The ST25E64operates with a power supply value as low as 2.5V. Both PlasticDual-in-Line and PlasticSmallOutline pack
ages are available.

COMPATIBLE with I2C EXTENDED ADDRESSING
TWO WIRE SERIAL INTERFACE, SUPPORTS 400kHz PROTOCOL
1 MILLION ERASE/WRITE CYCLES, OVER the FULL SUPPLY VOLTAGE RANGE
40 YEARS DATA RETENTION
SINGLE SUPPLY VOLTAGE
   – 4.5V to 5.5V for ST24E64 version
   – 2.5V to 5.5V for ST25E64 version
WRITE CONTROL FEATURE
BYTE and PAGE WRITE (up to 32 BYTES)
BYTE, RANDOM and SEQUENTIAL READ MODES
SELF TIMED PROGRAMING CYCLE
AUTOMATIC ADDRESS INCREMENTING
ENHANCED ESD/LATCH UP PERFORMANCES

Part Name(s) : 24CO25-P Microchip
Microchip Technology
Description : 2K 2.5V I2C SERIAL EEPROM View

The Microchip Technology Inc. 24AA024/24LC024/24AA025/24LC025 is a 2 Kbit SERIAL Electrically Erasable PROM with a voltage range of 1.7V to 5.5V.

The device is organized as a single block of 256 x 8-bit memory with a 2-wire SERIAL interface. Low current design permits operation with typical standby and active currents of only 1 μA and 1 mA, respectively.

The device has a page write capability for up to 16 bytes of DATA. Functional address lines allow the connection of up to eight 24AA024/24LC024/24AA025/24LC025 devices on the same bus for up to 16K bits of contiguous EEPROM memory. The device is available in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm), TSSOP, 2x3 DFN and TDFN and MSOP packages. The 24AA025/24LC025 is also available in the 6-lead SOT-23 package.
Package

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