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Description : High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)

High-voltage Switching Transistor (-400V, -0.5A)

Features
1) High breakdown voltage, BVCEO= -400V.
2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA.
3) High Switching speed, typically tf : 1μs at IC = -100mA.
4) Wide SOA (safe operating area).

ROHM
ROHM Semiconductor
Description : High-voltage Switching Transistor (Telephone power supply)(-400V, -0.5A)


Part Name(s) : A1807 A1862
ROHM
ROHM Semiconductor
Description : High-voltage Switching Transistor (Telephone power supply)

2SA1807 : -600V, -1A

2SA1826 : -400V, -2A

Description : High-voltage Switching Transistor (-400V, -0.5A)

Features
1) High breakdown voltage, BVCEO= -400V.
2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA.
3) High Switching speed, typically tf : 1μs at IC = -100mA.
4) Wide SOA (safe operating area).

Part Name(s) : IRFF330
NJSEMI
New Jersey Semiconductor
Description : 3.5A, 400V, 1.000 Ohm, N-Channel power MOSFET

3.5A, 400V, 1.000 Ohm, N-Channel power MOSFET

This N-Channel enhancement mode silicon gate power field effect Transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as Switching regulators, Switching converters, motor drivers, relay drivers, and drivers for high power bipolar Switching Transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 3.5A, 400V
• rDS(0N)= 1.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

Part Name(s) : IRFF320
Intersil
Intersil
Description : 2.5A, 400V, 1.800 Ohm, N-Channel power MOSFET

2.5A, 400V, 1.800 Ohm, N-Channel power MOSFET

This N-Channel enhancement mode silicon gate power field effect Transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as Switching regulators, Switching convertors, motor drivers, relay drivers, and drivers for high power bipolar Switching Transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 2.5A, 400V
• rDS(ON) = 1.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Part Name(s) : IRFF330
Intersil
Intersil
Description : 3.5A, 400V, 1.000 Ohm, N-Channel power MOSFET

3.5A, 400V, 1.000 Ohm, N-Channel power MOSFET

This N-Channel enhancement mode silicon gate power field effect Transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as Switching regulators, Switching convertors, motor drivers, relay drivers, and drivers for high power bipolar Switching Transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 3.5A, 400V
• rDS(ON) = 1.000Ω
• Single Pulse Avalanche Energy Rated
• SOA is power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Part Name(s) : 2SA1759 2SC4620
ROHM
ROHM Semiconductor
Description : High-voltage Switching Transistor

(Camera strobes and Telephone, power supply) (−400V, −0.1A)

Features
1) High breakdown voltage. (BVCEO = −400V)
2) Lowsaturation voltage, typically VCE(sat)= −0.2V at IC/ IB = −20mA/ −2mA.
3) High Switching speed, typicallytf=1µs at Ic =100mA.
4) Wide SOA(safe operating area).
5) Complements the 2SA4505.

Part Name(s) : BUZ351 C67078-A3103-A2
Siemens
Siemens AG
Description : 11.5A, 400V, 0.400 Ohm, N-Channel power MOSFET

11.5A, 400V, 0.400 Ohm, N-Channel power MOSFET

Part Name(s) : BUZ60B
Intersil
Intersil
Description : 4.5A, 400V, 1.500 Ohm, N-Channel power MOSFET

This is an N-Channel enhancement mode silicon gate power field effect Transistor designed for applications such as Switching regulators, Switching converters, motor drivers, relay drivers, and drivers for high power bipolar Switching Transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Features
• 4.5A, 400V
• rDS(ON) = 1.500Ω
• SOA is power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount
        Components to PC Boards”

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