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Part Name(s) : 2SA1727 2SA1727TL 2SA1727TLP 2SA1727TLQ 2SA1776 2SA1776TV2 2SA1776TV2P 2SA1776TV2Q 2SA1812 2SA1812T100 2SA1812T100P 2SA1812T100Q 2SA1727TLP 2SA1776TV2P 2SA1812T100P 2SA1727 2SA1727TL 2SA1727TLQ 2SA1776 2SA1776TV2 2SA1776TV2Q 2SA1812 2SA1812T100 2SA1812T100Q ROHM
ROHM Semiconductor
Description : HIGH-VOLTAGE SWITCHING TRANSISTOR (TELEPHONE POWER SUPPLY) (-400V, -0.5A)

HIGH-VOLTAGE SWITCHING TRANSISTOR (-400V, -0.5A)

Features
1) High breakdown voltage, BVCEO= -400V.
2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA.
3) High SWITCHING speed, typically tf : 1μs at IC = -100mA.
4) Wide SOA (safe operating area).

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Part Name(s) : A1807 A1862 ROHM
ROHM Semiconductor
Description : HIGH-VOLTAGE SWITCHING TRANSISTOR (TELEPHONE POWER SUPPLY)

2SA1807 : -600V, -1A

2SA1826 : -400V, -2A

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Part Name(s) : 2SA1727PQ 2SA1776PQ 2SA1812PQ A1727 A1776 A1812 ROHM
ROHM Semiconductor
Description : HIGH-VOLTAGE SWITCHING TRANSISTOR (TELEPHONE POWER SUPPLY)(-400V, -0.5A)


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Part Name(s) : 2SA1759 2SC4620 ROHM
ROHM Semiconductor
Description : HIGH-VOLTAGE SWITCHING TRANSISTOR

(Camera strobes and TELEPHONE, POWER SUPPLY) (−400V, −0.1A)

Features
1) High breakdown voltage. (BVCEO = −400V)
2) Lowsaturation voltage, typically VCE(sat)= −0.2V at IC/ IB = −20mA/ −2mA.
3) High SWITCHING speed, typicallytf=1µs at Ic =100mA.
4) Wide SOA(safe operating area).
5) Complements the 2SA4505.

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Part Name(s) : 2SC388 2SC388-C C388 Secos
Secos Corporation.
Description : 0.05A , 30V NPN Plastic-Encapsulated TRANSISTOR

0.05A , 30V NPN Plastic-Encapsulated TRANSISTOR

FEATURES
TV Final picture if amplifier applications

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Part Name(s) : 2SC5161 C5161 2SC5161TL C5161TL 2SC5161TLB C5161TLB ROHM
ROHM Semiconductor
Description : High voltage SWITCHING TRANSISTOR (400V, 2A)

Features
1) Low VCE(sat).
   VCE(sat)=0.15V (Typ.)
   (IC/IB=1A/0.2A)
2) High breakdown voltage.
   VCEO=400V
3) Fast SWITCHING.
   tf ≤1.0µs (IC=0.8A)

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Part Name(s) : 2SA1727_REVA 2SA1776_REVA 2SA1812_REVA A1727_REVA A1776_REVA A1812_REVA 2SA1727TL_REVA 2SA1776TV2_REVA 2SA1812T100_REVA ROHM
ROHM Semiconductor
Description : HIGH-VOLTAGE SWITCHING TRANSISTOR (-400V, -0.5A)

Features
1) High breakdown voltage, BVCEO= -400V.
2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA.
3) High SWITCHING speed, typically tf : 1μs at IC = -100mA.
4) Wide SOA (safe operating area).

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Part Name(s) : 2SC3320B NELLSEMI
Nell Semiconductor Co., Ltd
Description : Silicon NPN triple diffusion planar TRANSISTOR (High voltage SWITCHING TRANSISTOR) 15A/400V/150W

FEATURES
• High-speed SWITCHING
• High collector to base voltage, VCBO
• Satisfactory linearity of foward current transfer ratio hFE
• TO-3P package which can be installed to the heat sink with one screw

APPLICATIONS
SWITCHING regulator and general purpose
• Ultrasonic generators
• High frequency inverters
• General purpose POWER amplifiers

 

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Part Name(s) : 2SC2625B NELLSEMI
Nell Semiconductor Co., Ltd
Description : Silicon NPN triple diffusion planar TRANSISTOR (High voltage SWITCHING TRANSISTOR) 10A/400V/80W

FEATURES
• High collector to base voltage VCBO
• Satisfactory linearity of foward current transfer ratio hFE
• TO-3P package which can be installed to the heat sink
• High-speed SWITCHING with one screw

APPLICATIONS
SWITCHING regulator and general purpose
• Ultrasonic generators
• High frequency inverters

 

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Part Name(s) : FJA13009 NELLSEMI
Nell Semiconductor Co., Ltd
Description : Silicon NPN triple diffusion planar TRANSISTOR (High voltage SWITCHING TRANSISTOR) 12A/400V/130W

FEATURES
• High-speed SWITCHING
• High collector to base voltage VCBO
• Satisfactory linearity of foward current transfer ratio hFE
• TO-3P package which can be installed to the heat sink with one screw

APPLICATIONS
SWITCHING regulator and general purpose
• Ultrasonic generators
• High frequency inverters

 

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