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Part Name(s) : FDH3595 Fairchild
Fairchild Semiconductor
Description : HIGH CONDUCTANCE LOW LEAKAGE DIODE

HIGH CONDUCTANCE LOW LEAKAGE DIODE

Sourced from Process 1M. See MMBD1501-1505 for characteristics.

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Part Name(s) : MMBD1701 MMBD1703 MMBD1704 MMBD1705 MMBD1701A MMBD1703A MMBD1704A MMBD1705A Twtysemi
TY Semiconductor
Description : HIGH CONDUCTANCE LOW LEAKAGE DIODE

HIGH CONDUCTANCE LOW LEAKAGE DIODE

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Part Name(s) : MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1704A MMBD1705 MMBD1705A Kexin
KEXIN Industrial
Description : HIGH CONDUCTANCE LOW LEAKAGE DIODE

HIGH CONDUCTANCE LOW LEAKAGE DIODE

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Part Name(s) : MMBD1701 MMBD1703 MMBD1704 MMBD1705 MMBD1701A MMBD1703A MMBD1704A MMBD1705A Fairchild
Fairchild Semiconductor
Description : HIGH CONDUCTANCE LOW LEAKAGE DIODE

HIGH CONDUCTANCE LOW LEAKAGE DIODE

Sourced from Process 1T.

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Part Name(s) : 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A National-Semiconductor
National ->Texas Instruments
Description : HIGH CONDUCTANCE LOW LEAKAGE DIODE

HIGH CONDUCTANCE LOW LEAKAGE DIODE

Sourced from Process 1M.

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Part Name(s) : FLLD261 Fairchild
Fairchild Semiconductor
Description : HIGH CONDUCTANCE LOW LEAKAGE DIODE

HIGH CONDUCTANCE LOW LEAKAGE DIODE

PD . . . .350 mW @ TA = 25 Deg C
BV . . . .200 V (MIN) @ IR = 5 uA

ABSOLUTE MAXIMUM RATINGS (NOTE 1)
TEMPERATURES
   Storage Temperature -55 to +150 Degrees C
   Operating Junction Temperature -55 to +150 Degrees C

POWER DISSIPATION (NOTES 2 & 3)
   Total Device Dissipation at TA = 25 Deg C 350 mW
   Derating Factor per Degree C 2.8 mW

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Part Name(s) : MMBD1501 MMBD1503 MMBD1504 MMBD1505 MMBD1503A MMBD1504A MMBD1505A MMBD1501A MCC
Micro Commercial Components
Description : HIGH CONDUCTANCE LOW LEAKAGE DIODE 350mW

Features
LOW LEAKAGE
● Surface Mount Package Ideally Suited for Automatic Insertion
● 150°C Junction Temperature
HIGH CONDUCTANCE

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Part Name(s) : MMBD1501A MMBD1503A MMBD1504A MMBD1505A DSK
Diode Semiconductor Korea
Description : HIGH CONDUCTANCE LOW LEAKAGE DIODE

FEATURES
● Two element incorporated into one package.
   (Emitter-coupled transistors)
● Reduction of the mounting area and assembly cost by one half.

APPLICATIONS
● For general application.

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Part Name(s) : MMBD1501A MMBD1503A MMBD1504A MMBD1505A BILIN
Galaxy Semi-Conductor
Description : HIGH CONDUCTANCE LOW LEAKAGE DIODE

FEATURES
● Two element incorporated into one package.
   (Emitter-coupled transistors)
● Reduction of the mounting area and assembly cost by one half.

APPLICATIONS
● For general application.

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Part Name(s) : MMBD1501A MMBD1503A MMBD1504A MMBD1505A Willas
Willas Electronic Corp.
Description : HIGH CONDUCTANCE LOW LEAKAGE DIODE

FEATURES
● Two element incorporated into one package.
   (Emitter-coupled transistors)
● Reduction of the mounting area and assembly cost by one half.
● RoHS product for packing code suffix "G",
   Halogen free product for packing code suffix "H".

APPLICATIONS
● For general application.

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