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Part Name(s) : BFY180 Q97111419 Q97301013 BFY180P BFY180H BFY180S BFY180ES Infineon
Infineon Technologies
Description : HIREL NPN SILICON RF Transistor

HIREL NPN SILICON RF Transistor

HIREL Discrete and Microwave Semiconductor
• For low power amplifiers at collector currents from 0,2 mA to 2,5 mA.
• Hermetically sealed microwave package
• fT= 6,5 GHz F = 2.6 dB at 2 GHz
• eesa Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 01

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Part Name(s) : BFY193C BFY193CP BFY193CES Infineon
Infineon Technologies
Description : HIREL NPN SILICON RF Transistor

HIREL NPN SILICON RF Transistor

HIREL Discrete and Microwave Semiconductor
• For low noise, high-gain amplifiers up to 2GHz.
• For linear broadband amplifiers
• Specified 1/f Noise
• Hermetically sealed microwave package
• fT= 8 GHz
    F = 2.3 dB at 2 GHz
• eesa Space Qualified
    ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 08

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Part Name(s) : Q62702X143 Q62702X168 Infineon
Infineon Technologies
Description : HIREL SILICON PIN DIODE

HIREL Discrete and Microwave Semiconductor
• PIN DIODE for high speed switching of RF signals
• Very low capacitance
• Hermetically sealed microwave package
• eesa Space Qualified
   ESA/SCC Detail Spec. No.: 5513/017
   Type Variant No.s 01 to 02

 

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Part Name(s) : BFY182P BFY182H BFY182S BFY182ES BFY182 Q62702F1608 Q62702F1714 Infineon
Infineon Technologies
Description : HIREL NPN SILICON RF Transistor

HIREL NPN SILICON RF Transistor

HIREL Discrete and Microwave Semiconductor
• For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA.
• Hermetically sealed microwave package
• fT= 8 GHz
    F = 2.4 dB at 2 GHz
• eesa Space Qualified
    ESA/SCC Detail Spec. No.: 5611/006
    Type Variant No. 04

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Part Name(s) : BAS70 BAS70-T1 BAS70-T1ES BAS70-T1H BAS70-T1P BAS70-T1S Q62702A1173 Q62702A674 Siemens
Siemens AG
Description : HIREL SILICON SCHOTTKY DIODE

Features
HIREL Discrete and Microwave Semiconductor
• General-purpose DIODEs for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• Hermetically sealed microwave package
• eesa qualified
• ESA/SCC Detail Spec. No.: 5512/020

 

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Part Name(s) : BXY43P BXY43P-FP Q62702X164 Q62702X167 Siemens
Siemens AG
Description : HIREL SILICON PIN DIODE

Features
HIREL Discrete and Microwave Semiconductor
• Current controlled RF resistor for RF attenuators and switches
• High reverse voltage
• Matched DIODE - pair
• Hermetically sealed microwave package
• eesa qualified
• ESA/SCC Detail Spec. No.: 5513/030

 

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Part Name(s) : BFY183 BFY183ES BFY183H BFY183P BFY183S BFY183 BFY183ES BFY183H BFY183P BFY183S Q62702F1609 Q62702F1713 Infineon
Infineon Technologies
Description : HIREL NPN SILICON RF Transistor

HIREL NPN SILICON RF Transistor

HIREL Discrete and Microwave Semiconductor
● For low noise, high-gain broadband amplifiers at collector currents from 2mA to 30mA.
● Hermetically sealed microwave package
● fT= 8 GHz F = 2.3 dB at 2 GHz
● eesa Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 05

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Part Name(s) : BXY42 BXY42-T BXY42-T1 BXY42-T1ES BXY42-T1H BXY42-T1P BXY42-T1S BXY42-TES BXY42-TH BXY42-TP BXY42-TS Q62702X143 Q62702X168 Siemens
Siemens AG
Description : HIREL SILICON PIN DIODE

Features
HIREL Discrete and Microwave Semiconductor
• PIN DIODE for high speed switching of RF signals
• Very low capacitance
• Hermetically sealed microwave package
• eesa qualified
• ESA/SCC Detail Spec. No.: 5513/017

 

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Part Name(s) : BAS40 BAS40-T1 Q62702A1176 BAS140W BAS40 BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07 BAS40-07W BAS140W BAS40 BAS40-02L BAS40-04 BAS40-05 BAS40-05W BAS40-06 BAS40-06W BAS40-07 BAS40-07W BAS140W BAS40 Infineon
Infineon Technologies
Description : SILICON SCHOTTKY DIODE

HIREL SILICON SCHOTTKY DIODE

HIREL Discrete and Microwave
   Semiconductor
• General-purpose DIODEs for high-speed
   switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• Hermetically sealed microwave package
• eesa Space Qualification Expected 1998
   ESA/SCC Detail Spec. No.: 5512/020
   Type Variant No. 03 (tbc.)

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Part Name(s) : BFY193P BFY193H BFY193S BFY193ES BFY193 BFY193 BFY193ES BFY193H BFY193P BFY193S Q62702F1701 Q62702F1610 Infineon
Infineon Technologies
Description : HIREL NPN SILICON RF Transistor

HIREL NPN SILICON RF Transistor

HIREL Discrete and Microwave Semiconductor
• For low noise, high-gain amplifiers up to 2GHz.
• For linear broadband amplifiers
• Hermetically sealed microwave package
• fT= 8 GHz
    F = 2.3 dB at 2 GHz
• eesa Space Qualified
    ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 06

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