NPN Silicon Epitaxial Planar TRANSISTOR
HIGH VOLTAGE fast switching POWER TRANSISTOR
DESCRIPTION
The BUH715 is manufactured using Multiepitaxial Mesa technology for cost-effective HIGH performance and uses a Hollow Emitter structure to enhanceswitching speeds. .
■ SGS-THOMSON PREFERRED SALESTYPE
■ HIGH VOLTAGE CAPABILITY
■ U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
APPLICATIONS:
■ HORIZONTAL DEFLECTION FOR MONITORS
■ SWITCH MODE POWER SUPPLIES
DESCRIPTION
The UTC MJE13005D is a HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. It is characterized by HIGH breakdown VOLTAGE, HIGH current capability, HIGH switching speed and HIGH reliability.
The UTC MJE13005Dis intended to be used in energy-saving light, electronic ballast, HIGH frequency switching POWER supply, HIGH frequency POWER transform or common POWER amplifier, etc.
FEATURES
* HIGH Breakdown VOLTAGE
* HIGH Current Capability
* HIGH Switching Speed
* HIGH Reliability
* RoHS-Compliant Product
Description
The device is manufactured using HIGH VOLTAGE Multi-Epitaxial Planar technology for HIGH switching speeds and medium VOLTAGE capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
General features
■ NPN TRANSISTOR
■ HIGH VOLTAGE capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very HIGH switching speed
■ In compliance with the 2002/93/EC European Directive
Applications
■ Electronic ballast for fluorescent lighting
■ Dedicated for PFC solution in HF ballast half bridge VOLTAGE fed
DESCRIPTION
The BUL742 is manufactured using HIGH VOLTAGE Multi Epitaxial Planar technology for HIGH switching speeds and HIGH VOLTAGE capability.
■ HIGH VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ LARGE RBSOA
APPLICATIONS
■ ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUF420A is manufactured using HIGH VOLTAGE Multi Epitaxial Planar technology for HIGH switching speeds and HIGH VOLTAGE capacity. It use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in HIGH-frequency POWER supplies and motor control applications.
■ STMicroelectronics PREFERRED SALESTYPE
■ HIGH VOLTAGE CAPABILITY
■ VERY HIGH SWITCHING SPEED
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
■ SWITCH MODE POWER SUPPLIES
■ MOTOR CONTROL
DESCRIPTION
The BUH515 is manufactured using Multiepitaxial Mesa technology for cost-effective HIGH performance and uses a Hollow Emitter structure to enhance switching speeds.
The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
■ HIGH VOLTAGE CAPABILITY
■ U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N)).
APPLICATIONS:
■ HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
■ SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL381 and BUL382 manufactured using HIGH VOLTAGE Multiepitaxial Mesa technology for
cost-effective HIGH performance. They use a Hollow Emitter structure to enhance switching
speeds. The BUL series is designed for use in lighting applications and low cost switch-mode POWER supplies.
■ STM PREFERRED SALESTYPES
■ HIGH VOLTAGE CAPABILITY
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ FULLY CHARACTERISED AT 125oC
APPLICATIONS
■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL39D is manufactured using HIGH VOLTAGE Multi Epitaxial Planar technology to enhance switching speeds while maintaining wide RBSOA. The BUL series is designed for use in electronics transformers for halogen lamps.
■ NPN TRANSISTOR
■ HIGH VOLTAGE CAPABILITY
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ HIGH RUGGEDNESS
APPLICATIONS
■ ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS
■ SWITCH MODE POWER SUPPLIES
Description
The device is manufactured using HIGH VOLTAGE multi-epitaxial planar technology for HIGH switching speeds and medium VOLTAGE capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode POWER supplies.
Features
■ HIGH VOLTAGE capability
■ Minimum lot-to-lot spread for reliable operation
■ Very HIGH switching speed
Applications
■ Electronic ballast for fluorescent lighting
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