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Part Name(s) : IRFIBE30G IRFIBE30 IR
International Rectifier
Description : ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>. VDSS = 800V, ONt color="FF003B">RDSONt>(ON) = 3.0 Ohm, ID = 2.1A

ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>. VDSS = 800V, ONt color="FF003B">RDSONt>(ON) = 3.0 Ohm, ID = 2.1A

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Part Name(s) : IRF510 IR
International Rectifier
Description : ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>. VDSS = 100V, ONt color="FF003B">RDSONt>(ON) = 0.54 Ohm, ID = 5.6A

ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>. VDSS = 100V, ONt color="FF003B">RDSONt>(ON) = 0.54 Ohm, ID = 5.6A

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Part Name(s) : IRFB1010 IRFBC40LC IRFBC40LCPBF IRFBG30PBF IR
International Rectifier
Description : ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>(Vdss=600V/ ONt color="FF003B">RDSONt>(ON)=1.2ohm/ Id=6.2A)

ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>(Vdss=600V/ ONt color="FF003B">RDSONt>(ON)=1.2ohm/ Id=6.2A)

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Part Name(s) : IRFR9210 IRFU9210 IR
International Rectifier
Description : ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>. VDSS = -200V, ONt color="FF003B">RDSONt>(ON) = 3.0 Ω, ID = -1.9A

DESCRIPTION
The ONt color="FF003B">HEXFETONt> technology is the key to InternatiONal Rectifiers advanced line of ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt> transistors. The efficient geometry and unique processing of the ONt color="FF003B">HEXFETONt> design achieve very low ON-state resistance combined with high transcONductance and extreme device ruggedness.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead versiON (IRFU series) is for through-hole mounting applicatiONs. ONt color="FF003B">POWERONt> dissipatiON levels up to 1.5 W are possible in typical surface mount applicatiONs.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210)
• Straight Lead (IRFU9210)
• Available in Tape and Reel
• P-Channel
• Fast Switching

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Part Name(s) : IRF3710L IRF3710S IR
International Rectifier
Description : ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>. VDSS = 100V, ONt color="FF003B">RDSONt>(ON) = 0.025 Ohm, ID = 57A

VDSS = 100V
ONt color="FF003B">RDSONt>(ON) = 23mΩ
ID = 57A

DescriptiON
Advanced ONt color="FF003B">HEXFETONt>® ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>s from InternatiONal Rectifier utilize advanced processing techniques to achieve extremely low ON-resistance per silicON area. This benefit, combined with the fast switching speed and ruggedized device design that ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>s are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applicatiONs.

Advanced Process Technology
Ultra Low ON-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

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Part Name(s) : IRFR9220 IRFU9220 IR
International Rectifier
Description : ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>. VDSS = -200V, ONt color="FF003B">RDSONt>(ON) = 1.5 Ohm, ID = -3.6A

DESCRIPTION
The HEXFE technology is the key to InternatiONal Rectifiers advanced line of ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt> transistors. The efficient geometry and unique processing of the ONt color="FF003B">HEXFETONt> design achieve very low ON-state resistance combined with high transcONductance and extreme device ruggedness.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9220)
• Straight Lead (IRFUFU9220)
• Available in Tape & Reel
• P-Channel
• Fast Switching

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Part Name(s) : IRF7809AV IR
International Rectifier
Description : ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>. VDS = 30V, ONt color="FF003B">RDSONt>(ON) = 7.0mΩ

DescriptiON
This new device employs advanced ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt> technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced cONductiON and switching losses make it ideal for high efficiency DC-DC cONverters that ONt color="FF003B">POWERONt> the latest generatiON of microprocessors.

• N-Channel ApplicatiON-Specific ONt color="FF003B">MOSFETONt>s
• Ideal for CPU Core DC-DC CONverters
• Low CONductiON Losses
• Low Switching Losses
• Minimizes Parallel ONt color="FF003B">MOSFETONt>s for high current applicatiONs
• 100% Tested for RG

 

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Part Name(s) : IRF7809AVPBF IR
International Rectifier
Description : ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>. VDS = 30V, ONt color="FF003B">RDSONt>(ON) = 7.0mΩ

DescriptiON
This new device employs advanced ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt> technology to achieve an unprecedented balance of ON-resistance and gate charge. The reduced cONductiON and switching losses make it ideal for high efficiency DC-DC cONverters that ONt color="FF003B">POWERONt> the latest generatiON of microprocessors.

• N-Channel ApplicatiON-Specific ONt color="FF003B">MOSFETONt>s
• Ideal for CPU Core DC-DC CONverters
• Low CONductiON Losses
• Low Switching Losses
• Minimizes Parallel ONt color="FF003B">MOSFETONt>s for high current applicatiONs
• 100% Tested for Rg
• Lead-Free

 

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Part Name(s) : IRF1404ZLPBF IRF1404ZPBF IRF1404ZSPBF IRF1404ZSTRRPBF IRF1404ZSTRLPBF IR
International Rectifier
Description : ONt color="FF003B">HEXFETONt> ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>(VDSS= 40V ONt color="FF003B">RDSONt>(ON)= 3.7mΩ ID= 75A)

DescriptiON
Specifically designed for Automotive applicatiONs, this ONt color="FF003B">HEXFETONt>® ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt> utilizes the latest processing techniques to achieve extremely low ON resistance per silicON area.

Features
 Advanced Process Technology
 Ultra Low ON-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free

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Part Name(s) : IRF5803 IR
International Rectifier
Description : ONt color="FF003B">HEXFETONt>® ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>

DescriptiON
These P-channel ONt color="FF003B">HEXFETONt>® ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt>s from InternatiONal Rectifier utilize advanced processing techniques to achieve the extremely low ON-resistance per silicON area. This benefit provides the designer with an extremely efficient device for use in battery and load management applicatiONs.
The TSOP-6 package with its customized leadframe produces a ONt color="FF003B">HEXFETONt>® ONt color="FF003B">POWERONt> ONt color="FF003B">MOSFETONt> with ONt color="FF003B">RDSONt>(ON) 60% less than a similar size SOT-23. This package is ideal for applicatiONs where printed circuit board space is at a premium. Its unique thermal design and ONt color="FF003B">RDSONt>(ON) reductiON enables a current-handling increase of nearly 300% compared to the SOT-23.

● Ultra Low ON-Resistance
● P-Channel ONt color="FF003B">MOSFETONt>
● Surface Mount
● Available in Tape & Reel
● Low Gate Charge

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