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Part Name(s) : IRF510
IR
International Rectifier
Description : HEXFET Power MOSFET. VDSS = 100V, Rds(on) = 0.54 Ohm, ID = 5.6A

HEXFET Power MOSFET. VDSS = 100V, Rds(on) = 0.54 Ohm, ID = 5.6A

Part Name(s) : IRFIBE30G IRFIBE30
IR
International Rectifier
Description : HEXFET Power MOSFET. VDSS = 800V, Rds(on) = 3.0 Ohm, ID = 2.1A

HEXFET Power MOSFET. VDSS = 800V, Rds(on) = 3.0 Ohm, ID = 2.1A

IR
International Rectifier
Description : HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)

HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)

Part Name(s) : IRF3710L IRF3710S
IR
International Rectifier
Description : HEXFET Power MOSFET. VDSS = 100V, Rds(on) = 0.025 Ohm, ID = 57A

VDSS = 100V
Rds(on) = 23mΩ
ID = 57A

Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

Part Name(s) : IRFR9210 IRFU9210
IR
International Rectifier
Description : HEXFET Power MOSFET. VDSS = -200V, Rds(on) = 3.0 Ω, ID = -1.9A

DESCRIPTION
The HEXFET technology is the key to International Rectifiers advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210)
• Straight Lead (IRFU9210)
• Available in Tape and Reel
• P-Channel
• Fast Switching

Part Name(s) : IRF7809AV
IR
International Rectifier
Description : HEXFET Power MOSFET. VDS = 30V, Rds(on) = 7.0mΩ

Description
This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that Power the latest generation of microprocessors.

• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current applications
• 100% Tested for RG

 

Part Name(s) : IRF7809AVPBF
IR
International Rectifier
Description : HEXFET Power MOSFET. VDS = 30V, Rds(on) = 7.0mΩ

Description
This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that Power the latest generation of microprocessors.

• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current applications
• 100% Tested for Rg
• Lead-Free

 

Part Name(s) : IRFR9220 IRFU9220
IR
International Rectifier
Description : HEXFET Power MOSFET. VDSS = -200V, Rds(on) = 1.5 Ohm, ID = -3.6A

DESCRIPTION
The HEXFE technology is the key to International Rectifiers advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9220)
• Straight Lead (IRFUFU9220)
• Available in Tape & Reel
• P-Channel
• Fast Switching

Description : HEXFET Power MOSFET(VDSS= 40V Rds(on)= 3.7mΩ ID= 75A)

Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area.

Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free

Part Name(s) : IRF5803
IR
International Rectifier
Description : HEXFET® Power MOSFET

Description
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized leadframe produces a HEXFET® Power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. Its unique thermal design and Rds(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.

● Ultra Low On-Resistance
● P-Channel MOSFET
● Surface Mount
● Available in Tape & Reel
● Low Gate Charge

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