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Part Name(s) : HD14503B Hitachi
Hitachi -> Renesas Electronics
Description : HEX NON-INVERTING 3-STATE BUFFER View

HEX NON-INVERTING 3-STATE BUFFER

Part Name(s) : HEF40097 HEF40097B HEF40097BD HEF40097BF HEF40097BN HEF40097BP HEF40097BT Philips
Philips Electronics
Description : 3-STATE HEX NON-INVERTING BUFFER View

DESCRIPTION
The HEF40097B is a HEX NON-INVERTING BUFFER WITH 3-STATE OUTPUTS. The 3-STATE OUTPUTS are controlled by two enable inputs (EO4andEO2). A HIGH onEO4causes four of the six BUFFER elements to assume a high impedance or OFF-STATE, regardless of the other input conditions and a HIGH onEO2causes the OUTPUTS of the remaining two
BUFFER elements to assume a high impedance or OFF-STATE, regardless of the other input conditions.

 

Part Name(s) : MC54HC366 MC74HC366 MC54HC366J MC74HC366N Motorola
Motorola => Freescale
Description : HEX 3-STATE INVERTING BUFFER WITH Common Enables View

HEX 3-STATE INVERTING BUFFER WITH Common Enables   
High–Performance Silicon–Gate CMOS
   
The MC54/74HC366 is identical in pinout to the LS366. The device inputs are compatible WITH standard CMOS OUTPUTS; WITH pullup resistors, they are compatible WITH LSTTL OUTPUTS.
This device is a high–speed HEX BUFFER WITH 3–STATE OUTPUTS and two common active–low Output Enables. When either of the enables is high, the BUFFER OUTPUTS are placed into high–impedance STATEs. The HC366 has INVERTING OUTPUTS.
   
• Output Drive Capability: 15 LSTTL Loads
OUTPUTS Directly Interface to CMOS, NMOS, and TTL
• Operating Voltage Range: 2 to 6 V
• Low Input Current: 1 µA
• High Noise Immunity Characteristic of CMOS Devices
• In Compliance WITH the Requirements Defined by JEDEC Standard
    No. 7A
• Chip Complexity: 78 FETs or 19.5 Equivalent Gates
   

Part Name(s) : M74HC365 M74HC365B1R M74HC365M1R M74HC365RM13TR M74HC365TTR STMICROELECTRONICS
STMicroelectronics
Description : HEX BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTING) View

DESCRIPTION
The 74HC365 is an advanced high-speed CMOS HEX BUS BUFFER (3-STATE) fabricated WITH silicon gate C2MOS technology.

■ HIGH SPEED: tPD = 10ns (TYP.) at VCC = 6V
■ LOW POWER DISSIPATION: ICC = 4µA(MAX.) at TA=25°C
■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 % VCC (MIN.)
■ SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 6mA (MIN)
■ BALANCED PROPAGATION DELAYS: tPLH ≅ tPHL
■ WIDE OPERATING VOLTAGE RANGE: VCC (OPR) = 2V to 6V
■ PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 365


Part Name(s) : MC54F367J MC54F367 MC54F368J MC54F368 MC74F367D MC74F367 MC74F367N MC74F368D MC74F368 MC74F368N Motorola
Motorola => Freescale
Description : HEX BUFFER/DRIVER 4-BIT PLUS 2-BIT, NONINVERTING AND INVERTING, 3-STATE View

F367 HEX BUFFER/DRIVER 4-BIT PLUS 2-BIT, NONINVERTING 3-STATE

F368 HEX BUFFER/DRIVER 4-BIT PLUS 2-BIT, INVERTING 3-STATE FAST SCHOTTKY TTL

Part Name(s) : HEC40098BDB HEF40098B HEF40098BD HEF40098BDB HEF40098BDF HEF40098BF HEF40098BN HEF40098BP HEF40098BPB HEF40098BPN HEF40098BT HEF40098BTD HEF40098BU Philips
Philips Electronics
Description : 3-STATE HEX INVERTING BUFFER View

DESCRIPTION
The HEF40098B is a HEX INVERTING BUFFER WITH 3-STATE OUTPUTS. The 3-STATE OUTPUTS are controlled by two enable inputs (EO4 and EO2). A HIGH on EO4 causes four of the six BUFFER elements to assume a high impedance or OFF-STATE regardless of the other input conditions and a HIGH on EO2 causes the OUTPUTS of the remaining two BUFFER elements to assume a high impedance or OFF-STATE regardless of the other input conditions.

Part Name(s) : MC14503BF ON-Semiconductor
ON Semiconductor
Description : HEX NON-INVERTING 3-STATE BUFFER View

The MC14503B is a HEX NONINVERTING BUFFER WITH 3–STATE OUTPUTS, and a high current source and sink capability. The 3–STATE OUTPUTS make it useful in common BUSsing applications. Two disable controls are provided. A high level on the Disable A input causes the OUTPUTS of BUFFERs 1 through 4 to go into a high impedance STATE and a high level on the Disable B input causes the OUTPUTS of BUFFERs 5 and 6 to go into a high impedance STATE.

• 3–STATE OUTPUTS
• TTL Compatible — Will Drive One TTL Load Over Full
   Temperature Range
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Two Disable Controls for Added Versatility
• Pin for Pin Replacement for MM80C97 and 340097

Part Name(s) : MC14503BF ONSEMI
ON Semiconductor
Description : HEX NON?INVERTING 3?STATE BUFFER View

The MC14503B is a HEX NONINVERTING BUFFER WITH 3–STATE OUTPUTS, and a high current source and sink capability. The 3–STATE OUTPUTS make it useful in common BUSsing applications. Two disable controls are provided. A high level on the Disable A input causes the OUTPUTS of BUFFERs 1 through 4 to go into a high impedance STATE and a high level on the Disable B input causes the OUTPUTS of BUFFERs 5 and 6 to go into a high impedance STATE.

• 3–STATE OUTPUTS
• TTL Compatible — Will Drive One TTL Load Over Full
   Temperature Range
• Supply Voltage Range = 3.0 Vdc to 18 Vdc
• Two Disable Controls for Added Versatility
• Pin for Pin Replacement for MM80C97 and 340097

Part Name(s) : MC74VHCT240A MC74VHCT240AM MC74VHCT240ADW MC74VHCT240ADT Motorola
Motorola => Freescale
Description : Octal BUS BUFFER/Line Driver INVERTING WITH 3-STATE OUTPUTS View

Octal BUS BUFFER/Line Driver INVERTING WITH 3-STATE OUTPUTS

The MC74VHCT240A is an advanced high speed CMOS octal BUS BUFFER fabricated WITH silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The MC74VHCT240A is an INVERTING 3–STATE BUFFER, and has two active–low output enables. This device is designed to be used WITH 3–STATE memory address drivers, etc.

• High Speed: tPD = 5.6ns (Typ) at VCC = 5V
• Low Power Dissipation: ICC = 4µA (Max) at TA = 25°C
• TTL–Compatible Inputs: VIL = 0.8V; VIH = 2.0V
• Power Down Protection Provided on Inputs and OUTPUTS
• Balanced Propagation Delays
• Designed for 4.5V to 5.5V Operating Range
• Low Noise: VOLP = 1.1V (Max)
• Pin and Function Compatible WITH Other Standard Logic Families
• Latchup Performance Exceeds 300mA
• ESD Performance: HBM > 2000V; Machine Model > 200V
• Chip Complexity: 110 FETs or 27.5 Equivalent Gates

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