GaAs infrared emitter
Lead (Pb) Free Product - RoHS Compliant
Features
• Very highly efficient GaAs-LED
• 5mm plastic package
• Peak Wavelength 950 nm
• Very narrow radiation Angle (± 4 Deg.)
• High radiant intensity
• High reliability
Applications
• IR remote control of hi-fi and TV-sets, video tape recorders, dimmers
• Remote control for steady and varying intensity
• Sensor technology
• Discrete interrupters
DESCRIPTION
The SFH 435 is a two-beam GaAs infrared emitting diode with one chip. The beams emerge diametrically from the diode in a half angle of 8 degrees.
The radiation is emitted in the near infrared range. It is excited by a current flowing in forward direction, dc as well as pulse operation with simultaneous modulation are possible.
The SFH 435 is especially suitable for application in dual photo interrupters, i.e., light reflection switches, tape and control.
Safety Advices
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471.
Features
• High Power infrared LED
• Peak wavelength typ. 850 nm
• Half angle SFH 4258: ± 15°
• Half angle SFH 4259: ± 25°
• High forward current allowed at high temperature
Applications
• infrared Illumination for CMOS cameras
• IR Data Transmission
• Optical sensors
Features
• GaAs infrared emitting diode
• Clear plastic package with lateral emission
• Low cost plastic package
• Long term stability
• Wide beam (± 30°)
• Matches phototransistor LPT 80 A
Applications
• For a variety of manufacturing and monitoring applications which require beam interruption
• Light barriers
infrared LED FOR PHOTOSENSORS
OPTO-ELECTRONIC SWITCHES EQUIPMENT USING infrared TRANSMISSION
● Wide half value angle : θ1/2 = ±31° (typ.)
● Excellent radiant-intensity linearilty and modulation by pulse operation and high frequency is possible.
● Highly reliable due to hermetic seal.
Features
• GaAs infrared emitting diode
• Pink plastic package with lateral emission
• Low cost plastic package
• Long term stability
• Wide beam (± 30°)
• Matches phototransistor LPT 80 A
Applications
• For a variety of manufacturing and monitoring applications which require beam interruption
• Light barriers
Features
● GaAs infrared emitting diode
● Clear plastic package with lateral emission
● Low cost plastic package
● Long term stability
● Wide beam (± 30°)
● Matches phototransistor LPT 80 A
Applications
● For a variety of manufacturing and monitoring applications which require beam interruption
● Light barriers
infrared LED FOR PHOTOSENSORS
OPTO-ELECTRONIC SWITCHES
SELECTORS
TAPE AND CARD READERS
EQUIPMENT USING infrared TRANSMISSION
Features
• GaAs infrared emitting diode
• High reliability
• Available in bins
• Same package as BPX 81
• Miniature package
Applications
• Miniature photointerrupters
• Barcode readers
• Industrial electronics
• For control and drive circuits
• Sensor technology
• Speed controller
[OSRAM]
Features
• GaAs infrared emitting diode
• High reliability
• Available in bins
• Same package as BPX 81
• Miniature package
Applications
• Miniature photointerrupters
• Barcode readers
• Industrial electronics
• For control and drive circuits
• Sensor technology
• Speed controller
|