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Part Name(s) : NN5118160 NN5118160A NN5118160AJ-50 NN5118160AJ-60 NN5118160AJ-70 NN5118160ALJ-50 NN5118160ALJ-60 NN5118160ALJ-70 NN5118160ALRR-50 NN5118160ALRR-60 NN5118160ALRR-70 NN5118160ALTT-50 NN5118160ALTT-60 NN5118160ALTT-70 NN5118160ARR-50 NN5118160ARR-60 NN5118160ARR-70 NN5118160ATT-50 NN5118160ATT-60 NN5118160ATT-70 NN5118160B NN5118160BJ-40 NN5118160BJ-50 NN5118160BJ-60 NN5118160BTT-40 ETC1
Unspecified
Description : FAST PAGE MODE CMOS 1M x 16BIT DYNAMIC RAM View

[Nippon Steel Semi Corp]

FAST PAGE MODE CMOS 1M x 16BIT DYNAMIC RAM

Part Name(s) : KM416C4000B KM416C4100B Samsung
Samsung
Description : 4M x 16BIT CMOS DYNAMIC RAM with FAST PAGE MODE View

DESCRIPTION
This is a family of 4,194,304 x 16 bit FAST PAGE MODE CMOS DRAMs. FAST PAGE MODE offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 FAST PAGE MODE DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

FEATURES
• Part Identification
    - KM416C4000B(5.0V, 8K Ref.)
    - KM416C4100B(5.0V, 4K Ref.)
• Active Power Dissipation
• Refresh Cycles
* Access MODE & RAS only refresh MODE : 8K cycle/64ms
    CAS-before-RAS & Hidden refresh MODE : 4K cycle/64ms
• Performance Range
FAST PAGE MODE operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
FAST parallel test MODE capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply

Part Name(s) : V53C806H V53C806H40 V53C806H45 V53C806H50 V53C806H60 V53C806HK40 V53C806HK45 V53C806HK50 V53C806HK60 MOSEL
Mosel Vitelic, Corp
Description : HIGH PERFORMANCE 1M x 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM View

Description
The V53C806H is a ultra high speed 1,048,576 x 8 bit CMOS DYNAMIC random access memory. The V53C806H offers a combination of features: FAST PAGE MODE for high data bandwidth, and Low CMOS standby current.
All inputs and outputs are TTL compatible. Input and output capacitances are significantly lowered to allow increased system performance.

Features
1M x 8-bit organization
FAST PAGE MODE for a sustained data rate of 43 MHz
■ RAS access time: 40, 45, 50, 60 ns
■ Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability
■ Refresh Interval: 1024 cycle/16 ms
■ Available in 28-pin 400 mil SOJ package
■ Single +5V ±10% Power Supply
■ TTL Interface

 

Part Name(s) : V53C806H V53C806H40 V53C806H45 V53C806H50 V53C806H60 V53C806HK40 V53C806HK45 V53C806HK50 V53C806HK60 Mosel-Vitelic
Mosel Vitelic Corporation
Description : HIGH PERFORMANCE 1M x 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM View

Description
The V53C806H is a ultra high speed 1,048,576 x 8 bit CMOS DYNAMIC random access memory. The V53C806H offers a combination of features: FAST PAGE MODE for high data bandwidth, and Low CMOS standby current.
All inputs and outputs are TTL compatible. Input and output capacitances are significantly lowered to allow increased system performance.

Features
1M x 8-bit organization
FAST PAGE MODE for a sustained data rate of 43 MHz
■ RAS access time: 40, 45, 50, 60 ns
■ Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh capability
■ Refresh Interval: 1024 cycle/16 ms
■ Available in 28-pin 400 mil SOJ package
■ Single +5V ±10% Power Supply
■ TTL Interface

 


Part Name(s) : KM44C256BL KM44C256BL-10 KM44C256BL-8 KM44C256BL-7 Samsung
Samsung
Description : 256 x 4 Bit CMOS DYNAMIC RAM with FAST PAGE MODE View

256 x 4 Bit CMOS DYNAMIC RAM with FAST PAGE MODE

Part Name(s) : KM44C256A KM44C256A-10 KM44C256A-12 KM44C256A-8 Samsung
Samsung
Description : 256 x 4 Bit CMOS DYNAMIC RAM with FAST PAGE MODE View

256 x 4 Bit CMOS DYNAMIC RAM with FAST PAGE MODE

Part Name(s) : KM416C1000C KM416C1000C-L KM416C1200C KM416C1200C-L KM416V1000C KM416V1000C-L KM416V1200C KM416V1200C-L KM416C1000CJ KM416C1000CT KM416C1200CJ KM416C1200CT KM416V1000CJ KM416V1000CT KM416V1200CJ KM416V1200CT Samsung
Samsung
Description : 1M x 16BIT CMOS DYNAMIC RAM with FAST PAGE MODE View

DESCRIPTION
This is a family of 1,048,576 x 16 bit FAST PAGE MODE CMOS DRAMs. FAST PAGE MODE offers high speed random access of memory cells within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family.

FEATURES
• Part Identification
    - KM416C1000C/C-L (5V, 4K Ref.)
    - KM416C1200C/C-L (5V, 1K Ref.)
    - KM416V1000C/C-L (3.3V, 4K Ref.)
    - KM416V1200C/C-L (3.3V, 1K Ref.)
• Active Power Dissipation
• Refresh Cycles
• Perfomance Range
FAST PAGE MODE operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in 42-pin SOJ 400mil and 50(44)-pin TSOP(II) 400mil packages
• Single +5V±10% power supply (5V product)
• Single +3.3V±0.3V power supply (3.3V product)

Part Name(s) : KM416C4000C KM416C4000CS KM416C4100C KM416C4100CS KM416C4000C-5 KM416C4000C-6 KM416C4100C-5 KM416C4100C-6 Samsung
Samsung
Description : 4M x 16BIT CMOS DYNAMIC RAM with FAST PAGE MODE View

DESCRIPTION
This is a family of 4,194,304 x 16 bit FAST PAGE MODE CMOS DRAMs. FAST PAGE MODE offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family.

FEATURES
• Part Identification
    - KM416C4000C(5.0V, 8K Ref.)
    - KM416C4100C(5.0V, 4K Ref.)
• Active Power Dissipation
• Refresh Cycles
• Performance Range
FAST PAGE MODE operation
• 2CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
FAST parallel test MODE capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply

Part Name(s) : HYB5118160BSJ-50 HYB5118160BSJ-50- HYB5118160BSJ-60 Q67100-Q1072 Q67100-Q1073 Siemens
Siemens AG
Description : 1M 16-Bit DYNAMIC RAM 1k Refresh (FAST PAGE MODE) View

1M × 16-Bit DYNAMIC RAM 1k Refresh (FAST PAGE MODE)

The HYB 5(3)118160 are 16 MBit DYNAMIC RAMs based on die revisions “G” & “F” and organized as 1 048 576 words by 16-bits. The HYB 5(3)118)160 utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5(3)118160 to be packaged in a standard SOJ-42 plastic package with 400 mil width. This package provide high system bit densities and is compatible with commonly used automatic testing and insertion equipment.

Advanced Information
• 1 048 576 words by 16-bit organization
• 0 to 70 °C operating temperature
FAST PAGE MODE operation
• Performance:
• Power Dissipation, Refresh & Addressing:
• Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh and hidden refresh
• All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.3 V version)-compatible
• Plastic Package: P-SOJ-42-1 400 mil

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