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Part Name(s) : SKB10N60A SKP10N60A SKW10N60A Q67040-S4458 Q67040-S4459 Q67040-S4506 K10N60 PG-TO-220-3-1 PG-TO-247-3 SKP10N60A SKW10N60A K10N60 SKP10N60A SKW10N60A PG-TO-220-3-1 PG-TO-247-3 Infineon
Infineon Technologies
Description : FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED DIODE

FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED DIODE

• 75% lower Eoff compared to previous generation combINed WITH low conduction losses
• Short circuit WITHstand time – 10 µs
• Designed for:
   - Motor controls
   - INverter
NPT-TECHNOLOGY for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switchINg capability
• Very SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE
• Complete product spectrum and PSpice Models : INfINeon.com/IGBT/" data-cke-saved-href="//www.INfINeon.com/IGBT/">//www.INfINeon.com/IGBT/

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Part Name(s) : IKW20N60TA K20T60A Infineon
Infineon Technologies
Description : Low Loss DuoPack : IGBT IN TrenchStop® and Fieldstop technology WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED HE DIODE

Low Loss DuoPack : IGBT IN TrenchStop® and Fieldstop technology WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED HE DIODE

• Automotive AEC Q101 qualified
• Designed for DC/AC converters for Automotive Application
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit WITHstand time 5s
• TrenchStop® and Fieldstop technology for 600 V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
    - very high switchINg speed
• Positive temperature coefficient IN VCE(sat)
• Low EMI
• Low Gate Charge
• Green Package
• Very SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED HE DIODE

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Part Name(s) : SKW07N120 K07N120 SKW07N120 K07N120 K07N120 SKW07N120 Q67040-S4280 Infineon
Infineon Technologies
Description : FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE

FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE

• Lower Eoff compared to previous generation
• Short circuit WITHstand time – 10 µs
• Designed for:
   - Motor controls
   - INverter
   - SMPS
NPT-TECHNOLOGY offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switchINg capability
• Qualified accordINg to JEDEC1 for target applications
• Pb-free lead platINg; RoHS compliant
• Complete product spectrum and PSpice Models : INfINeon.com/IGBT/" data-cke-saved-href="//www.INfINeon.com/IGBT/">//www.INfINeon.com/IGBT/

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Part Name(s) : IKW20N60T K20T60 Infineon
Infineon Technologies
Description : Low Loss DuoPack : IGBT IN TRENCHSTOP™ and Fieldstop technology WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED HE DIODE

Features:
• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit WITHstand time 5s
• Designed for :
    - Frequency Converters
    - UnINterrupted Power Supply
• TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
    - very tight parameter distribution
    - high ruggedness, temperature stable behavior
    - very high switchINg speed
    - low VCE(sat)
• Positive temperature coefficient IN VCE(sat)
• Low EMI
• Low Gate Charge
• Very SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED HE DIODE
• Qualified accordINg to JEDEC1 for target applications
• Pb-free lead platINg; RoHS compliant
• Complete product spectrum and PSpice Models : INfINeon.com/IGBT/" data-cke-saved-href="//www.INfINeon.com/IGBT/">//www.INfINeon.com/IGBT/

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Part Name(s) : K75T60 IKW75N60T K75T60 IKW75N60T K75T60 IKW75N60T Infineon
Infineon Technologies
Description : Low Loss DuoPack : IGBT IN TRENCHSTOP™ and Fieldstop technology WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED HE DIODE

Low Loss DuoPack : IGBT IN Trench and Fieldstop technology WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon HE DIODE

• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit WITHstand time – 5µs
• Positive temperature coefficient IN VCE(sat)
• very tight parameter distribution
• high ruggedness, temperature stable behaviour
• very high switchINg speed
• Low EMI
• Very SOFT, FAST RECOVERY ANTI-PARALLEL EmCon HE DIODE
• Qualified accordINg to JEDEC1) for target applications
• Pb-free lead platINg; RoHS compliant
• Complete product spectrum and PSpice Models : INfINeon.com/IGBT/" data-cke-saved-href="//www.INfINeon.com/IGBT/">//www.INfINeon.com/IGBT/

Applications:
• Frequency Converters
• UnINterrupted Power Supply

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Part Name(s) : K06N60 SKA06N60 SKP06N60 Infineon
Infineon Technologies
Description : FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE

•75% lower Eoffcompared to previous generation combINed WITH low conduction losses
•Short circuit WITHstand time – 10 µs
•Designed for: Motor controls, INverter
NPT-TECHNOLOGY for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switchINg capability
•Very SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE
•Isolated TO-220, 2.5kV, 60s
•Pb-free lead platINg; RoHS compliant

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Part Name(s) : IKW50N60TA Infineon
Infineon Technologies
Description : IGBT IN TRENCHSTOP™ and Fieldstop technology WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED HE DIODE

Features:
Automotive AEC Q101 qualified
Designed for DC/AC converters for Automotive Application
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit WITHstand time 5 µs
TRENCHSTOPTM and Fieldstop technology for 600 V
applications offers :
  - very tight parameter distribution
  - high ruggedness, temperature stable behavior
  - very high switchINg speed
Positive temperature coefficient IN VCE(sat)
Low EMI
Low Gate Charge
Green Package
Very SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED HE DIODE

Applications:
MaIN INverter
Air – Con compressor
PTC heater
Motor drives

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Part Name(s) : IKW25N120T2 K25T1202 IKW25N120T2 K25T1202 Infineon
Infineon Technologies
Description : Low Loss DuoPack : IGBT IN 2nd generation TrenchStop® WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED DIODE

Low Loss DuoPack : IGBT IN 2nd generation TrenchStop® WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE

• Short circuit WITHstand time – 10µs
• Designed for :
   - Frequency Converters
   - UnINterrupted Power Supply
• TrenchStop® 2nd generation for 1200 V applications offers :
   - very tight parameter distribution
   - high ruggedness, temperature stable behavior
• Easy parallelINg capability due to positive temperature coefficient
   IN VCE(sat)
• Low EMI
• Low Gate Charge
• Very SOFT, FAST RECOVERY ANTI-PARALLEL EmCon HE DIODE
• Qualified accordINg to JEDEC1 for target applications
• Pb-free lead platINg; RoHS compliant
   Complete product spectrum and PSpice Models : INfINeon.com/IGBT/" data-cke-saved-href="//www.INfINeon.com/IGBT/">//www.INfINeon.com/IGBT/

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Part Name(s) : K40T1202 IKW40N120T2 IKW40N120T2 K40T1202 Infineon
Infineon Technologies
Description : Low Loss DuoPack : IGBT IN 2nd generation TrenchStop® WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMITTER CONTROLLED DIODE

Low Loss DuoPack : IGBT IN 2nd generation TrenchStop® WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE

• Best IN class TO247
• Short circuit WITHstand time – 10µs
• Designed for :
   - Frequency Converters
   - UnINterrupted Power Supply
• TrenchStop® 2nd generation for 1200 V applications offers :
   - very tight parameter distribution
   - high ruggedness, temperature stable behavior
• Easy parallelINg capability due to positive temperature coefficient IN
   VCE(sat)
• Low EMI
• Low Gate Charge
• Very SOFT, FAST RECOVERY ANTI-PARALLEL EmCon HE DIODE
• Qualified accordINg to JEDEC1 for target applications
• Pb-free lead platINg; RoHS compliant
• Complete product spectrum and PSpice Models : INfINeon.com/IGBT/" data-cke-saved-href="//www.INfINeon.com/IGBT/">//www.INfINeon.com/IGBT/

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Part Name(s) : Q67040-S4243 Q67040-S4251 Q67040-S4252 SKB15N60 SKP15N60 SKW15N60 Infineon
Infineon Technologies
Description : FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE

• 75% lower Eoff compared to previous generation combINed WITH low conduction losses
• Short circuit WITHstand time – 10 µs
• Designed for:
  - Motor controls
  - INverter
NPT-TECHNOLOGY for 600V applications offers:
  - very tight parameter distribution
  - high ruggedness, temperature stable behaviour
  - parallel switchINg capability
• Very SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE

View

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