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Part Name(s) : CHFP6KE170 CHFP6KE170A CHFP6KE170C CHFP6KE170CA CHFP6KE80 CHFP6KE80A CHFP6KE80C CHFP6KE80CA Microsemi
Microsemi Corporation
Description : FLIP CHIP TVS DIODES Patented Flip Chip Series

FLIP CHIP TVS DIODES Patented Flip Chip Series

FEATURES
● Unidirectional and bidirectional
● Fully glass passivated
● 5000 watt (10/1000 ms)
● Eliminates wire bonding
● No overshoot
● Provides optimum voltage clamping

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Part Name(s) : CHF5KP80 CHF5KP80A CHF5KP80C CHF5KP80CA Microsemi
Microsemi Corporation
Description : FLIP CHIP TVS DIODES

FLIP CHIP TVS DIODES Patented Flip Chip Series

FEATURES
• Unidirectional and bidirectional
• Fully glass passivated
• 5000 watt (10/1000 ms)
• Eliminates wire bonding
• No overshoot
• Provides optimum voltage clamping

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Part Name(s) : SFC05-4 SFC05-4.WC SFC05-4.WCT Semtech
Semtech Corporation
Description : ChipClamp™ Flip Chip TVS Diode Array

Description
The SFC05-4 is a quad flip chip TVS array. They are state-of-the-art devices that utilize solid-state siliconavalanche technology for superior clamping performance and DC electrical characteristics. The SFC series TVS DIODES are designed to protect sensitive semiconductor components from damage or latch-up due to electrostatic discharge (ESD) and other voltage induced transient events.

Features
◆ 300 Watts peak pulse power (tp = 8/20µs)
◆ Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 24A (8/20µs)
◆ Small chip scale package requires less board space
◆ Low profile (< 0.65mm)
◆ No need for underfill material
◆ Protects four I/O or data lines
◆ Low clamping voltage
◆ Working voltage: 5V
◆ Solid-state silicon-avalanche technology

Applications
◆ Cell Phone Handsets and Accessories
◆ Personal Digital Assistants (PDA’s)
◆ Notebook and Hand Held Computers
◆ Portable Instrumentation
◆ Smart Cards
◆ MP3 Players
◆ GPS

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Part Name(s) : CHF5KP10 CHF5KP100 CHF5KP100A CHF5KP100C CHF5KP100CA CHF5KP10A CHF5KP10C CHF5KP10CA CHF5KP11 CHF5KP110 CHF5KP110A CHF5KP110C CHF5KP110CA CHF5KP11A CHF5KP11C CHF5KP11CA CHF5KP12 CHF5KP12A CHF5KP12C CHF5KP12CA CHF5KP13 CHF5KP13A CHF5KP13C CHF5KP13CA CHF5KP14 Microsemi
Microsemi Corporation
Description : FLIP CHIP TVS DIODES

FLIP CHIP TVS DIODES Patented Flip Chip Series

FEATURES
• Unidirectional and bidirectional
• Fully glass passivated
• 5000 watt (10/1000 ms)
• Eliminates wire bonding
• No overshoot
• Provides optimum voltage clamping

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Part Name(s) : SFC2309-200 SFC2309-200.TC SFC2309-200.TCT Semtech
Semtech Corporation
Description : Flip Chip TVS Diode with T-Filter for Color LCD Interface Protection

Description
The SFC2309-200 is a low pass filter array with integrated TVS DIODES. It is designed to suppress unwanted EMI/RFI signals and provide electrostatic discharge (ESD) protection in portable electronic equipment. This state-of-the-art device utilizes solidstate silicon-avalanche technology for superior clamping performance and DC electrical characteristics. They have been optimized for protection of color LCD panels in cellular phones and other portable electronics.

Features
◆ Flip Chip bidirectional EMI/RFI filter with integrated ESD protection
◆ ESD protection to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns)
◆ Filter performance: 25dB minimum attenuation 800MHz to 3GHz
TVS working voltage: 5V
◆ Resistor: 200Ω
◆ Input Capacitance:45pF
◆ Protection and filtering for ten lines

Applications
◆ Color LCD Panel Protection
◆ Cell Phone Handsets and Accessories
◆ Personal Digital Assistants (PDA’s)
◆ Notebook & Hand Held Computers

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Part Name(s) : CHFP6KE50C CHFP6KE50 CHFP6KE50AA CHFP6KE50A Microsemi
Microsemi Corporation
Description : FLIP-CHIP TVS DIODES

FEATURES
• Unidirectional and Bidirectional
• Fully glass passivated
• 600 watt (10/1000 ms)
• Eliminates wire bonding
• NON Inductive Insertion
• No voltage overshoot

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Part Name(s) : DMK2783-000 DMK2790-000 DMK2308-000 DMK8001-000 Alpha
Alpha Industries
Description : GaAs Flip Chip Schottky DIODES

Description
This new series of GaAs Schottky barrier DIODES offer high performance at commercial market prices. They are designed for low junction capacitance, as well as low series resistance.DIODES are designed for MIC work (hard and soft substrates), but the leadless design eliminates the problems associated with mounting of beam lead DIODES.

Features
■ Designed for High Volume Designs
■ High Frequency (20–100 GHz)
■ Exceeds Environmental Requirements for MIC & Hybrid Applications
■ Designed for Low Junction Capacitance and Low Series Resistance
■ Applications Include PCN Mixers and Circuits, As Well As Low Power, Fast Switching
■ Low Parasitic Flip Chip Configuration

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Part Name(s) : SMLJ36CE3/TR13 Microsemi
Microsemi Corporation
Description : ESD Suppressors / TVS DIODES Transient Voltage Suppressor

ESD Suppressors / TVS DIODES Transient Voltage Suppressor

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Part Name(s) : MA4E1317 MA4E1318 MA4E1319-1 MA4E1319-2 MA4E2160 MACOM
Tyco Electronics
Description : GaAs Flip Chip Schottky Barrier DIODES

Description and Applications
M/A-COM's MA4E1317 single, MA4E1318 anti parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flipchip Schottky barrier DIODES. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The DIODES are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.
The protective coatings prevent damage to the junction during automated or manual handling.
The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency
of these DIODES allowsuse through millimeter wave frequencies. Typical applications include
single and double balanced mixers in PCN transceivers and radios, police radar detectors,
and automotive radar detectors. The devices can be used through 80 GHz.

Features
•  Low Series Resistance
•  Low Capacitance
•  High Cutoff Frequency
•  Silicon Nitride Passivation
•  Polyimide Scratch Protection
•  Designed for Easy Circuit Insertion

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Part Name(s) : MA4E1317 MA4E1317_V7 MA4E1318 MA4E1319-1 MA4E1319-2 MA4E2160 MA-COM
M/A-COM Technology Solutions, Inc.
Description : GaAs Flip Chip Schottky Barrier DIODES

Description and Applications
M/A-COM's MA4E1317 single, MA4E1318 anti parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flipchip Schottky barrier DIODES. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The DIODES are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.
The protective coatings prevent damage to the junction during automated or manual handling.
The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency
of these DIODES allowsuse through millimeter wave frequencies. Typical applications include
single and double balanced mixers in PCN transceivers and radios, police radar detectors,
and automotive radar detectors. The devices can be used through 80 GHz.

Features
•  Low Series Resistance
•  Low Capacitance
•  High Cutoff Frequency
•  Silicon Nitride Passivation
•  Polyimide Scratch Protection
•  Designed for Easy Circuit Insertion

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