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Part Name(s) : DCP020515DPDCP021515P TI
TITI
Description : Miniature, 2W, Isolated UNREGULATED DC/DC CONVERTERS

DESCRIPTION
The DCP02 series is a family of 2W, isolated, unregulated DC/DC converters. Requiring a minimum of external components and including on-chip device protection, the DCP02 series provides extra features such as output disable and synchronization of switching frequencies. The use of a highly integrated package design results in highly reliable products with power densities of 79W/in3 (4.8W/cm3) for DIP-14, and 106W/in3 (6.5W/cm3) for SO-28. This combination of features and small size makes the DCP02 suitable for a wide range of applications.

FEATURES
Up To 89% Efficiency
Thermal Protection
Device-to-Device Synchronization
SO-28 Power Density of 106W/in3 (6.5W/cm3 )
EN55022 Class B EMC Performance
UL1950 Recognized Component
JEDEC 14-Pin and SO-28 Packages


APPLICATIONS
Point-of-Use Power Conversion
Ground Loop Elimination
Data Acquisition
Industrial Control and Instrumentation
Test Equipment

Part Name(s) : BVU-359TT9M ETC
ETCETC
Description : OVAL LED LAMP - Yellow Color
Dice Material : AlInGaP/GaP Yellow
Light Color : Yellow Color
Lens Color : Yellow Tinted Diffused
Stand-Off P/N : BVU-359TT9M R
Part Name(s) : F1210 Polyfet-RF
Polyfet-RFPolyfet-RF
Description : PATENTED GOLD METALIZED 10Watts Single Ended SILICON GATE NHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet"
TM process features  gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
 

Part Name(s) : MCC162 MCC162-08IO1 MCC162-12IO1 MCC162-14IO1 MCC162-16IO1 MCC162-18IO1 MCD162 MCD162-08IO1 MCD162-12IO1 MCD162-14IO1 MCD162-16IO1 MCD162-18IO1 IXYS
IXYSIXYS
Description : Thyristor Modules , Thyristor/Diode Modules

Features
International standard package
Direct copper bonded Al2O3 -ceramic base plate
Planar passivated chips
Isolation voltage 3600 V~
UL registered, E 72873
Keyed gate/cathode twin pins

 

Applications
Motor control
Power converter
Heat and temperature control for industrial furnaces and chemical processes
Lighting control
Contactless switches

Part Name(s) : MC74HC161A MC74HC161ADT MC74HC163A MC74HC163ADR2 MC74HC163ADT MC74HC163ADTR2 ON-Semiconductor
ON-SemiconductorON-Semiconductor
Description : Presettable Counters

The MC74HC161A and HC163A are identical in pinout to the LS161 and LS163. The device inputs are compatible with standard CMOS outputs; with pull–up resistors, they are compatible with LSTTL outputs. The HC161A and HC163A are programmable 4–bit binary counters with asynchronous and synchronous reset, respectively.

 Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2.0 to 6.0 V
Low Input Current: 1.0 A
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard No. 7A
Chip Complexity: 192 FETs or 48 Equivalent Gates

Part Name(s) : SSL12 SSL13 SSL14 LUGUANG
LUGUANGLUGUANG
Description : 1.0 AMP. Surface Mount Low VF Schottky Barrier Rectifiers

Features
For surface mounted application
Metal silicon junction, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carries Underwriters Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering: 260°C / 10 seconds at terminals

 

Part Name(s) : GA50TS120U IR
IRIR
Description : HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast™ Speed IGBT

VCES = 1200V
VCE(on) typ. = 2.4V
@VGE = 15V, IC = 50A

 

Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology

Part Name(s) : 2SC2712 Rectron
RectronRectron
Description : SOT-23 BIPOLAR PNP TRANSISTOR

FEATURES
*Power dissipation
    PCM : 150 mW(Tamb=25OC)

*Collector current
    ICM : 150 mA

*Collector-base voltage
    V(BR)CBO : 60 V
Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC

Part Name(s) : 2N7002K 2N7002KG 2N7002KG-AE2-R 2N7002KL-AE2-R UTC
UTCUTC
Description : 300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION
The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in PWM applications.

„ FEATURES
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness

Part Name(s) : HY05-P/SP1 HY10-P/SP1 HY12-P/SP1 HY15-P/SP1 HY20-P/SP1 HY25-P/SP1 LEM
LEMLEM
Description : Current Transducers HY 5 to 25-P/SP1

For the electronic measurement of currents : DC, AC, pulsed..., with a galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit) with unipolar power supply.

Features
Hall effect measuring principle
Galvanic isolation between primary and secondary circuit
Isolation voltage 2500 V~
Compact design for PCB mounting
Low power consumption
Extended measuring range (3 x IPN)
Insulated plastic case recognized according to UL 94-V0.

 

Advantages
Easy mounting
Small size and space saving
Only one design for wide current ratings range
High immunity against external interference.

 

Applications
General purpose inverters
AC variable speed drives
Static converters for DC motor drives
Battery supplied applications
Uninterruptible Power Supplies (UPS)
Switched-Mode Power Supplies (SMPS).

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