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Part Name(s) : 74AHC1G07 74AHC1G07GV 74AHC1G07GW 74AHCT1G07 74AHCT1G07GV 74AHCT1G07GW Philips
Philips Electronics
Description : BUFFER WITH OPEN-DRAIN OUTPUT

DESCRIPTION
The 74AHC1G/AHCT1G07 is a high-speed Si-gate CMOS device.
The 74AHC1G/AHCT1G07 provides the non-inverting BUFFER.
The OUTPUT of the 74AHC1G/AHCT1G07 devices is an open drain and can be connected to other OPEN-DRAIN
OUTPUTs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level.

FEATURES
• High noise immunity
• ESD protection:
  HBM EIA/JESD22-A114-A exceeds 2000 V
  MM EIA/JESD22-A115-A exceeds 200 V
• Low power dissipation
• SOT353 package
OUTPUT capability standard (open drain).

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Part Name(s) : MC74VHC1G07 MC74VHC1G07DFT1 ONSEMI
ON Semiconductor
Description : Non-Inverting BUFFER WITH Open Drain OUTPUT

The MC74VHC1G07 is an advanced high speed CMOS BUFFER WITH open drain OUTPUT fabricated WITH silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a BUFFER and an open drain OUTPUT which provides the capability to set the OUTPUT switching level. This allows the MC74VHC1G07 to be used to interface 5V circuits to circuits of any voltage between VCC and 7V using an external resistor and power supply.
The MC74VHC1G07 input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage.

• High Speed: tPD = 3.8ns (Typ) at VCC = 5V
• Low Internal Power Dissipation: ICC = 2µA (Max) at TA = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible WITH Other Standard Logic Families
• Latchup Performance Exceeds 300mA
• ESD Performance: HBM > 2000V; MM > 200V, CDM > 1500V

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Part Name(s) : MC74VHC1G07 MC74VHC1G07DFT1 MC74VHC1G07DFT2 MC74VHC1G07DFT4 MC74VHC1G07DTT1 MC74VHC1G07DTT3 ETL
E-Tech Electronics LTD
Description : Noninverting BUFFER WITH Open Drain OUTPUT

The MC74VHC1G07 is an advanced high speed CMOS BUFFER WITH open drain OUTPUT fabricated WITH silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a BUFFER and an open drain OUTPUT which provides the capability to set the OUTPUT switching level. This allows the MC74VHC1G07 to be used to interface 5 V circuits to circuits of any voltage between V CCand 7 V using an external resistor and power supply.
The MC74VHC1G07 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.

• High Speed: t PD = 3.8 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible WITH Other Standard Logic Families
• Chip Complexity: FET = 105; Equivalent Gate = 26

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Part Name(s) : MC74VHC1G07 MC74VHC1G07DFT1 MC74VHC1G07DFT2 MC74VHC1G07DFT4 MC74VHC1G07DTT1 MC74VHC1G07DTT3 Leshan-Radio
Leshan Radio Company
Description : Noninverting BUFFER WITH Open Drain OUTPUT

The MC74VHC1G07 is an advanced high speed CMOS BUFFER WITH open drain OUTPUT fabricated WITH silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a BUFFER and an open drain OUTPUT which provides the capability to set the OUTPUT switching level. This allows the MC74VHC1G07 to be used to interface 5 V circuits to circuits of any voltage between V CCand 7 V using an external resistor and power supply.
The MC74VHC1G07 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage.

• High Speed: t PD = 3.8 ns (Typ) at V CC = 5 V
• Low Internal Power Dissipation: I CC = 2 mA (Max) at T A= 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible WITH Other Standard Logic Families
• Chip Complexity: FET = 105; Equivalent Gate = 26

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Part Name(s) : 74LVC1G07 74LVC1G07GF 74LVC1G07GM 74LVC1G07GN 74LVC1G07GS 74LVC1G07GV 74LVC1G07GW 74LVC1G07GX NXP
NXP Semiconductors.
Description : BUFFER WITH OPEN-DRAIN OUTPUT

The 74LVC1G07 provides the non-inverting BUFFER. The OUTPUT of this device is an open drain and can be connected to other OPEN-DRAIN OUTPUTs to implement active-LOW wired-OR or active-HIGH wired-AND functions. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device in a mixed 3.3 V and 5 V environment. Schmitt-trigger action at all inputs makes the circuit tolerant for slower input rise and fall time. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the OUTPUT, preventing the damaging backflowcurrent through the device when it is powered down.

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Part Name(s) : 74AHC1G07 74AHCT1G07 74AHC1G07GW 74AHCT1G07GW 74AHC1G07GV 74AHCT1G07GV NXP
NXP Semiconductors.
Description : BUFFER WITH OPEN-DRAIN OUTPUT

General description
74AHC1G07 and 74AHCT1G07 are high-speed Si-gate CMOS devices. They provide a non-inverting BUFFER.
The OUTPUT of these devices is OPEN-DRAIN and can be connected to other OPEN-DRAIN OUTPUTs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level.
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

Features
■ High noise immunity
■ Low power dissipation
■ SOT353-1 and SOT753 package options
■ ESD protection:
   ◆ HBM JESD22-A114E: exceeds 2000 V
   ◆ MM JESD22-A115-A: exceeds 200 V
   ◆ CDM JESD22-C101C: exceeds 1000 V
■ Specified from −40 °C to +125 °C

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Part Name(s) : 74LVC1G07 74LVC1G07GM 74LVC1G07GV 74LVC1G07GW Philips
Philips Electronics
Description : BUFFER WITH OPEN-DRAIN OUTPUT

DESCRIPTION
The 74LVC1G07 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. The input can be driven from either 3.3 or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 and 5 V environment. Schmitt trigger action at the input makes the circuit tolerant for slower input rise and fall time. The 74LVC1G07 provides the non-inverting BUFFER. The OUTPUT of the device is an open drain and can be connected to other OPEN-DRAIN OUTPUTs to implement active-LOW wired-OR or active-HIGH wired-AND functions.

FEATURES
• Wide supply voltage range from 1.65 to 5.5 V
• High noise immunity
• Complies WITH JEDEC standard:
– JESD8-7 (1.65 to 1.95 V)
– JESD8-5 (2.3 to 2.7 V)
– JESD8B/JESD36 (2.7 to 3.6 V).
• 24 mA OUTPUT drive (VCC= 3.0 V)
• CMOS low power consumption
• Latch-up performance exceeds 250 mA
• Direct interface WITH TTL levels
• Inputs accept voltages up to 5 V
• Multiple package options
• ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
• Specified from−40 to +85°C and−40 to +125°C.

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Part Name(s) : MC74VHC1G07 MC74VHC1G07DFT1 MC74VHC1G07 MC74VHC1G07DFT1G MC74VHC1G07DFT2G MC74VHC1G07DTT1G MC74VHC1G07 MC74VHC1G07DFT1G NLVVHC1G07DFT1G MC74VHC1G07DFT2G MC74VHC1G07DTT1G ON-Semiconductor
ON Semiconductor
Description : Single Non-Inverting BUFFER WITH Open Drain OUTPUT

Non-Inverting BUFFER WITH Open Drain OUTPUT

The MC74VHC1G07 is an advanced high speed CMOS BUFFER WITH open drain OUTPUT fabricated WITH silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
The internal circuit is composed of three stages, including a BUFFER and an open drain OUTPUT which provides the capability to set the OUTPUT switching level. This allows the MC74VHC1G07 to be used to interface 5V circuits to circuits of any voltage between VCC and 7V using an external resistor and power supply.
The MC74VHC1G07 input structure provides protection when voltages up to 7V are applied, regardless of the supply voltage.

• High Speed: tPD = 3.8ns (Typ) at VCC = 5V
• Low Internal Power Dissipation: ICC = 2µA (Max) at TA = 25°C
• Power Down Protection Provided on Inputs
• Pin and Function Compatible WITH Other Standard Logic Families
• Latchup Performance Exceeds 300mA
• ESD Performance: HBM > 2000V; MM > 200V, CDM > 1500V

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Part Name(s) : LVC07AQ SN74LVC07A-Q1 SN74LVC07AQDRQ1 SN74LVC07AQPWRG4Q1 SN74LVC07AQPWRQ1 TI
Texas Instruments
Description : HEX BUFFER/DRIVER WITH OPEN-DRAIN OUTPUTS

DESCRIPTION/ORDERING INFORMATION
This hex BUFFER/driver is designed for 1.65-V to 5.5-V VCC operation.
The OUTPUTs of the SN74LVC07A device are open drain and can be connected to other OPEN-DRAIN OUTPUTs to implement active-low wired-OR or active-high wired-AND functions. The maximum sink current is 24 mA.
Inputs can be driven from 1.8-V, 2.5-V, 3.3-V (LVTTL), or 5-V (CMOS) devices. This feature allows the use of this device as a translator in a mixed-system environment.

FEATURES
• Qualified for Automotive Applications
• Operates From 1.65 V to 5 V
• Inputs and OPEN-DRAIN OUTPUTs Accept
   Voltages up to 5.5 V
• Latch-Up Performance Exceeds 250 mA Per JESD 17

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Part Name(s) : 74HC9115 74HC9115D 74HC9115N 74HCT9115 74HCT9115D 74HCT9115N Philips
Philips Electronics
Description : Nine wide Schmitt trigger BUFFER; open drain OUTPUTs

GENERAL DESCRIPTION
The 74HC/HCT9115 are high-speed Si-gate CMOS devices and are pin compatible WITH low power Schottky TTL (LSTTL). They are specified in compliance WITH JEDEC standard no. 7A.
The 74HC/HCT9115 are nine wide Schmitt trigger BUFFER WITH open drain OUTPUTs and Schmitt trigger inputs.

FEATURES
• Schmitt trigger action on all data inputs
OUTPUT capability: standard (open drain)
• ICC category: MSI

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