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Part Name(s) : AP4959GM A-POWER
Advanced Power Electronics Corp
Description : P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description
TThe ADVANCED Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness.
   
▼ Lower Turn-on Voltage
▼ Simple Drive Requirement
▼ Dual P MOSFET Package
   

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Part Name(s) : AP4957M A-POWER
Advanced Power Electronics Corp
Description : P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description
The ADVANCED Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
   
▼ Low On-Resistance
▼ Simple Drive Requirement
▼ Dual P MOSFET Package
   

View
Part Name(s) : AP4957GM A-POWER
Advanced Power Electronics Corp
Description : P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description
The ADVANCED Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
   
▼ Low On-Resistance
▼ Simple Drive Requirement
▼ Dual P MOSFET Package
   

View
Part Name(s) : AOD9N40 D9N40 APEC
Advanced Power Electronics Corp
Description : 400V,8A N-Channel MOSFET

The AOD9N40 isfabricated using an ADVANCED high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

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Part Name(s) : SSP7N80A Fairchild
Fairchild Semiconductor
Description : ADVANCED POWER MOSFET

ADVANCED POWER MOSFET

FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS= 800V
Low RDS(ON) : 1.472 W(Typ.)
 

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Part Name(s) : SSS2N60A Fairchild
Fairchild Semiconductor
Description : ADVANCED POWER MOSFET

ADVANCED POWER MOSFET

FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS= 600V
Lower RDS(ON) : 3.892 W (Typ.)

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Part Name(s) : SSS6N70A Samsung
Samsung
Description : ADVANCED POWER MOSFET TO-220F

ADVANCED POWER MOSFET
BVDSS= 700 V RDS(on) = 1.8 W ID= 4 A

FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS= 700V
Low RDS(ON) : 1.552 W(Typ.)

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Part Name(s) : SSR2N60A SSU2N60A Fairchild
Fairchild Semiconductor
Description : ADVANCED POWER MOSFET

ADVANCED POWER MOSFET

FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS= 600V
Lower RDS(ON) : 3.892 W (Typ.)

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Part Name(s) : SSS4N60AS Fairchild
Fairchild Semiconductor
Description : ADVANCED POWER MOSFET

ADVANCED POWER MOSFET

FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25  A (Max.) @ VDS= 600V
Lower RDS(ON) : 2.037Ω  (Typ.)

W
m

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Part Name(s) : SSS10N60A Fairchild
Fairchild Semiconductor
Description : ADVANCED POWER MOSFET

ADVANCED POWER MOSFET
BVDSS= 600 V RDS(on) = 0.8 ID= 5.1 A

FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25  (Max.) @ VDS= 600V
Low RDS(ON) : 0.646  (Typ.)

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