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Part Name(s) : HN58X2408FPI HN58X2408I HN58X2408TI HN58X2416FPI HN58X2416I HN58X2416TI HN58X2432FPI HN58X2432I HN58X2432TI HN58X2464FPI HN58X2464I HN58X2464TI Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 8k EEPROM (1-kword 8-bit)/16k EEPROM (2-kword 8-bit) 32k EEPROM (4-kword 8-bit)/64k EEPROM(8-kword 8-bit) View

Description
HN58X24xxI series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 32-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
- Standby: 3 µA(max)
- Active (Read): 1 mA(max)
- Active (Write): 3 mA(max)
• Automatic page write: 32-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: TSSOP-8pin and SOP-8pin
• Shipping tape and reel
- TSSOP 8-pin: 3,000 IC/reel
- SOP 8-pin: 2,500 IC/reel
• Temperature range: –40 to +85°C

 

Part Name(s) : HN58X2408FPIE HN58X2408I HN58X2408TIE HN58X2416FPIE HN58X2416I HN58X2416TIE HN58X2432FPIE HN58X2432I HN58X2432TIE HN58X2464FPIE HN58X2464I HN58X2464TIE Renesas
Renesas Electronics
Description : Two-wire SERIAL INTERFACE 8k EEPROM (1-kword 8-bit)/16k EEPROM (2-kword 8-bit) 32k EEPROM (4-kword 8-bit)/64k EEPROM (8-kword 8-bit) View

Description
HN58X24xxI series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 32-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
- Standby: 3 µA (max)
- Active (Read): 1 mA (max)
- Active (Write): 3 mA (max)
• Automatic page write: 32-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: TSSOP-8pin , SOP-8pin
• Shipping tape and reel
- TSSOP 8-pin: 3,000 IC/reel
- SOP 8-pin: 2,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free products.

 

Part Name(s) : 24C08 TU24C08BP TU24C08BP3I TU24C08BPI TU24C08BS TU24C08BS3I TU24C08BSI ETC1
Unspecified
Description : CMOS IC 2-WIRE BUS 8K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 1K X 8 BIT EEPROM View

DESCRIPTION:
The Turbo IC 24C08 is a SERIAL 8K EEPROM fabricated with Turbo’s proprietary, high reliability, high performance CMOS technology. It’s 8K of memory is organized as 1,024 x 8 bits. The memory is configured as 64 pages with each page containing 16 bytes. This device offers significant advantages in low power and low voltage applications.

FEATURES :
• Extended Power Supply Voltage
Single Vcc for Read and Programming
(Vcc = 2.7 V to 5.5 V)
• Low Power (Isb = 2µa @ 5.5 V)
• I²C BUS, 2-WIRE SERIAL INTERFACE
• Support Byte Write and Page Write (16 Bytes)
• Automatic Page write Operation (maximum 10 ms)
Internal Control Timer
Internal Data Latches for 16 Bytes
• High Reliability CMOS Technology with EEPROM Cell
Endurance : 1,000,000 Cycles
Data Retention : 100 Years

Part Name(s) : HN58X2402SFPI HN58X2402STI HN58X2404SFPI HN58X2404STI HN58X2402SI HN58X2404SI Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 2k EEPROM (256-word 8-bit) 4k EEPROM (512-word 8-bit) View

Description
HN58X24xxSI series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 8-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
    - Standby: 3 µA (max)
    - Active (Read): 1 mA (max)
    - Active (Write): 3 mA (max)
• Automatic page write: 8-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: TSSOP 8-pin and SOP 8-pin
• Shipping tape and reel
    - TSSOP 8-pin: 3,000 IC/reel
    - SOP 8-pin: 2,500 IC/reel


Part Name(s) : HN58X2402SFPIE HN58X2402STIE HN58X2404SFPIE HN58X2404STIE HN58X2402SI HN58X2404SI Renesas
Renesas Electronics
Description : Two-wire SERIAL INTERFACE 2k EEPROM (256-word 8-bit) 4k EEPROM (512-word 8-bit) View

Description
HN58X24xxSI series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 8-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
    -Standby: 3 µA (max)
    -Active (Read): 1 mA (max)
    -Active (Write): 3 mA (max)
• Automatic page write: 8-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: TSSOP 8-pin and SOP 8-pin
• Shipping tape and reel
    -TSSOP 8-pin: 3,000 IC/reel
    -SOP 8-pin: 2,500 IC/reel
• Lead free products.

Part Name(s) : 24LC08 24LC08A 24LC08T Ceramate
CERAMATE TECHNICAL
Description : 8K-BIT SERIAL EEPROM View

OVERVIEW
The 24LC08 SERIAL EEPROM has a 8,192-bit (1,024-byte) capacity, supporting the standard I2C™-BUS SERIAL INTERFACE. It is fabricated using CERAMATEs most advanced CMOS technology. One of its major feature ’ is a hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 16 bytes of data into the EEPROM in a single write operation. Another significant feature of the 24LC08 is its support for fast mode and standard mode.

FEATURES
I2C-BUS INTERFACE
• Two-wire SERIAL INTERFACE
• Automatic word address increment

EEPROM
8K-BIT (1,024-byte) storage area
• 16-byte page buffer
• Typical 3.5 ms write cycle time with auto-erase function
• Hardware-based write protection for the entire EEPROM (using the WP pin)
EEPROM programming voltage generated on chip
• 1,000,000 erase/write cycles
• 100 years data retention

Operating Characteristics
• Operating voltage
    — 2.5 V to 5.5 V (write)
    — 2.2 V to 5.5 V (read)
• Operating current
    — Maximum write current: < 3 mA at 5.5 V
    — Maximum read current: < 200 mA at 5.5 V
    — Maximum stand-by current: < 5 mA at 3.3 V
• Operating temperature range
    — – 25°C to + 70°C (commercial)
    — – 40°C to + 85°C (industrial)
• Operating clock frequencies
    — 100 kHz at standard mode
    — 400 kHz at fast mode
• Electrostatic discharge (ESD)
    — 3,000 V (HBM)
    — 300 V (MM)

Packages
• 8-pin DIP, SOP, and TSSOP

Part Name(s) : HN58X24128FPI HN58X24128I HN58X24128TI HN58X24256FPI HN58X24256I HN58X24256TI Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 128k EEPROM (16-kword 8-bit) 256k EEPROM (32-kword 8-bit) View

Description
HN58X24xxx series are two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 64-byte page programming function to make their write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 400 kHz
• Power dissipation:
- Standby: 3 µA (max)
- Active (Read): 1 mA (max)
- Active (Write): 5 mA (max)
• Automatic page write: 64-byte/page
• Write cycle time: 10 ms (2.7 V to 5.5 V)/15 ms (1.8 V to 2.7 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: SOP-8pin, TSSOP-14pin
• Shipping tape and reel
- TSSOP 14-pin: 2,000 IC/reel
- SOP 8-pin: 2,500 IC/reel
• Temperature range: –40 to +85°C

 

Part Name(s) : HN58X24512FPI HN58X24512I Hitachi
Hitachi -> Renesas Electronics
Description : Two-wire SERIAL INTERFACE 512k EEPROM (64-kword 8-bit) View

Description
HN58X24512I is the two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM).
It realizes high speed, low power consumption and a high level of reliability by employing advanced
MNOS memory technology and CMOS process and low voltage circuitry technology.  It also has a 128-
byte page programming function to make it’s write operation faster.

Features
• Single supply:  1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency:  1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 2.5 V)
• Power dissipation:
 Standby:  3 µA (max)
 Active (Read):  2 mA (max)
 Active (Write):  5 mA (max)
• Automatic page write:  128-byte/page
• Write cycle time:  10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 2.5 V)
• Endurance:  105 Cycles (Page write mode)
• Data retention:  10 Years

Part Name(s) : HN58X24512FPIE HN58X24512I Renesas
Renesas Electronics
Description : Two-wire SERIAL INTERFACE 512k EEPROM (64-kword 8-bit) View

Description
HN58X24512I is the two-wire SERIAL INTERFACE EEPROM (Electrically Erasable and Programmable ROM). It realizes high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. It also has a 128-byte page programming function to make it’ s write operation faster.

Features
• Single supply: 1.8 V to 5.5 V
• Two-wire SERIAL INTERFACE (I2CTM SERIAL BUS*1)
• Clock frequency: 1 MHz (2.5 V to 5.5 V)/400 kHz (1.8 V to 5.5 V)
• Power dissipation:
 Standby: 3 µA (max)
 Active (Read): 2 mA (max)
 Active (Write): 5 mA (max)
• Automatic page write: 128-byte/page
• Write cycle time: 10 ms (2.5 V to 5.5 V)/15 ms (1.8 V to 5.5 V)
• Endurance: 105 Cycles (Page write mode)
• Data retention: 10 Years
• Small size packages: SOP-8pin (200 mil-wide)
• Shipping tape and reel: 1,500 IC/reel
• Temperature range: −40 to +85°C
• Lead free products.

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