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The RF MOSFET Line RF Power Field-Effect Transistor N-CHANNEL Enhancement-Mode MOSFET

GENERAL DESCRIPTION
The ALD1115 is a monolithic complementary N-CHANNEL and P-channel transistor pair intended for a broad range of analog applications. These enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process. It consists of a N-CHANNEL MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.

FEATURES
• Thermal tracking between N-CHANNEL and P-channel
• Low threshold voltage of 0.7V for both N-CHANNEL and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 10¹³Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 10⁹
• Single N-CHANNEL MOSFET and single P-channel MOSFET in one package

APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete analog switches
• Analog signal choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
• CMOS inverter stage
• Diode clamps
• Source followers

GENERAL DESCRIPTION
The ALD1115 is a monolithic complementary N-CHANNEL and  P-channel transistor pair intended for a broad range of analog applications.  These enhancement-mode transistors are manufactured with Advanced Linear
Devices' enhanced ACMOS silicon gate CMOS process.  It consists of a N-CHANNEL MOSFET and a P-channel MOSFET in one package. The ALD1115 is a dual version of the quad complementary ALD1105.

FEATURES
• Thermal tracking between N-CHANNEL and P-channel
• Low threshold voltage of 0.7V for both N-CHANNEL and P-channel MOSFETs
• Low input capacitance
• High input impedance -- 10¹³Ω typical
• Low input and output leakage currents
• Negative current (IDS) temperature coefficient
• Enhancement mode (normally off)
• DC current gain 10⁹
• Single N-CHANNEL MOSFET and single P-channel MOSFET in one package

APPLICATIONS
• Precision current mirrors
• Complementary push-pull linear drives
• Discrete analog switches
• Analog signal choppers
• Differential amplifier input stage
• Voltage comparator
• Data converters
• Sample and Hold
• Analog current inverter
• Precision matched current sources
• CMOS inverter stage
• Diode clamps
• Source followers

P-Channel MOSFET in a Hermetically sealed TO39 Metal Package.

P-Channel MOSFET.
VDSS = 200V
ID = 4A
RDS(ON) = 0.8Ω

Dual N-CHANNEL 30-V (D-S) MOSFET

FEATURES
TrenchFET® Power MOSFET

P-Channel Silicon MOSFET
General-Purpose Switching Device Applications

Features
• The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.
• 4V drive.

Complementary MOSFET Half-Bridge (N- and P-Channel)

FEATURES
● TrenchFET Power MOSFET

General-Purpose Switching Device Applications

Features
• DC / DC converter.
• Composite type with an N-CHANNEL sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting.

• [MOSFET]
• 1.8V drive.

• [SBD]
• Short reverse recovery time.
• Low forward voltage.

General-Purpose Switching Device Applications

Features
• Composite type with an N-CHANNEL sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one
package facilitating high-density mounting.

• [MOSFET]
• Low ON-resistance.
• 1.8V drive.

• [SBD]
• Short reverse recovery time.
• Low forward voltage.