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Part Name(s) : FQAF7N80 Fairchild
Fairchild Semiconductor
Description : 800V N-CHANNEL MOSFET

800V N-CHANNEL MOSFET

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Part Name(s) : STP12NK80Z STB12NK80Z STW12NK80Z NJSEMI
New Jersey Semiconductor
Description : N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET

N-CHANNEL 800V - 0.651} - 10.5A TO-220 / D2PAK / TO-247 Zener-Protected SuperMESH™ Power MOSFET

■ TYPICAL Ros(on) = 0.65 Q
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIE

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Part Name(s) : IRFIBE30G IRFIBE30 IR
International Rectifier
Description : HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A

HEXFET power MOSFET. VDSS = 800V, RDS(on) = 3.0 Ohm, ID = 2.1A

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Part Name(s) : FQP2N80 Fairchild
Fairchild Semiconductor
Description : 800V N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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Part Name(s) : FQPF3N80 Fairchild
Fairchild Semiconductor
Description : 800V N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 1.8A, 800V, RDS(on) = 5.0Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 7.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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Part Name(s) : FQPF6N80 Fairchild
Fairchild Semiconductor
Description : 800V N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 3.3A, 800V, RDS(on) = 1.95Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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Part Name(s) : FQA6N80 Fairchild
Fairchild Semiconductor
Description : 800V N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 6.3A, 800V, RDS(on) = 1.95Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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Part Name(s) : FQAF10N80 Fairchild
Fairchild Semiconductor
Description : 800V N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 6.7A, 800V, RDS(on) = 1.05Ω @VGS = 10 V
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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Part Name(s) : FQAF6N80 Fairchild
Fairchild Semiconductor
Description : 800V N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 4.4A, 800V, RDS(on) = 1.95Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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Part Name(s) : FQB2N80 FQI2N80 Fairchild
Fairchild Semiconductor
Description : 800V N-CHANNEL MOSFET

General Description
These N-CHANNEL enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

Features
• 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V
• Low gate charge ( typical 12 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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