datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Word's :
Hitachi
Hitachi -> Renesas Electronics
Description : 16384-word x 1-bit HIGH SPEED CMOS STATIC RAM

16384-word x 1-bit HIGH SPEED CMOS STATIC RAM

Sony
Sony Semiconductor
Description : 131072-word × 8-BIT HIGH SPEED CMOS STATIC RAM

Description
The CXK5V81000ATM is a HIGH SPEED CMOS STATIC RAM organized as 131072-words by 8-BITs.
A polysilicon TFT cell technology realized extremely low stand-by current and HIGHer data retention stability.
Operating on a single 3.3V supply, and special feature are low power consumption, HIGH SPEED.
The CXK5V81000ATM is a suitable RAM for portable equipment with battery back up.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time:
                      (Access time)
            -85LLX 85ns (Max.)
          -10LLX 100ns (Max.)
• Low standby current: 28µA (Max.)
• Low data retention current: 24µA (Max.)
• Single 3.3V supply: 3.3V ± 0.3V
• Low voltage data retention: 2.0V (Min.)
• Package
    8mm × 20mm 32 pin TSOP package

Function
    131072-word x 8-BIT STATIC RAM

Description : 131072-word × 8-BIT HIGH SPEED Bi-CMOS STATIC RAM

Description
CXK5B81020J/TM is a HIGH SPEED 1M bit Bi-CMOS STATIC RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in HIGH SPEED and low power applications.

Features
• Single 3.3V power supply: 3.3V ± 0.3V
• Fast access time 12ns (Max.)
• Low standby current: 10mA (Max.)
• Low power operation 864mW (Max.)
• Package line-up
    Dual Vcc/Vss
    CXK5B81020J 400mil 32pin SOJ package
    CXK5B81020TM 400mil 32pin TSOP package

Function
    131072 word × 8-BIT STATIC RAM

Description : 65536-word X 8-BIT HIGH SPEED CMOS STATIC RAM

Description
The CXK5V8512TM is a HIGH SPEED CMOS STATIC RAM organized as 65536-words by 8-BITs.
A polysilicon TFT cell technology realized extremely low stand-by current and HIGHer data retention stability.
Operating on a single 3.3V supply, and special feature are low power consumption, HIGH SPEED.
The CXK5V8512TM is a suitable RAM for portable equipment with battery back up.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time:
                       (Access time)
             -85LLX 85ns (Max.)
           -10LLX 100ns (Max.)
• Low standby current: 14µA (Max.)
• Low data retention current: 12µA (Max.)
• Single 3.3V supply: 3.3V ± 0.3V
• Low voltage data retention: 2.0V (Min.)
• Package
    8mm × 20mm 32 pin TSOP package

Function
    65536-word × 8-BIT STATIC RAM

Description : 2048 word x 8 Bit HIGH SPEED CMOS STATIC RAM

2048 word x 8 Bit HIGH SPEED CMOS STATIC RAM

Description : 524288-word x 8-BIT HIGH SPEED CMOS STATIC RAM

Description
The Hitachi HM628512AI is a 4-Mbit STATIC RAM organized 512-kword x 8-BIT. It realizes HIGHer density, HIGHer performance and low power consumption by conploying 0.5 μm Hi-CMOS process technology.

Description : 131072-word x 8-BIT HIGH SPEED CMOS STATIC RAM

131072-word x 8-BIT HIGH SPEED CMOS STATIC RAM

The Hitachi HM628128 is a CMOS STATIC RAM organized 128-kword x 8-BIT. It realizes HIGHer density, HIGHer performance and low power consumption by employing 0.8 μm Hi-CMOS process technology.

Hitachi
Hitachi -> Renesas Electronics
Description : 32,768-word × 8-BIT HIGH SPEED CMOS STATIC RAM

Description
The Hitachi HM62256B is a CMOS STATIC RAM organized 32-kword ×8-BIT. It realizes HIGHer performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. The device, packaged in 8 ×14 mm TSOP, 8 ×13.4 mm TSOP with thickness of 1.2 mm, 450-mil SOP (foot print pitch width), 600-mil plastic DIP, or 300-mil plastic DIP, is available for HIGH density mounting. It offers low power standby power dissipation; therefore, it is suitable for battery back-up systems.

Features
HIGH SPEED
  Fast access time: 45/55/70/85 ns (max)
• Low power
  Standby: 1.0 µW (typ)
  Operation: 25 mW (typ) (f = 1 MHz)
• Single 5 V supply
• Completely STATIC memory
  No clock or timing strobe required
• Equal access and cycle times
• Common data input and output
  Three state output
• Directly TTL compatible
  All inputs and outputs
• Capability of battery back up operation

Description : 8192 WORD X 8 BIT CMOS STATIC RAM

8192 WORD X 8 BIT CMOS STATIC RAM

Description : HIGH-Reliability CMOS 2048-Word by 8-BIT LSI STATIC RAM

HIGH-Reliability CMOS 2048-Word by 8-BIT LSI STATIC RAM

The RCA-CDM6116AC/3 is a CMOS 2048-word by 8-BIT STATIC random-access memory. It is designed for use in memory systems where HIGH-SPEED, low power and simplicity in use are desirable. This device has common data inputs and data outputs and utilizes a single power supply of 4.5 to 5.5 V.

12345678910 Next

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]