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Part Name(s) : TC5564 TC5564AFL-15 TC5564AFL-20 TC5564APL-15 TC5564APL-20 Toshiba
Toshiba
Description : 8192 WORD X 8 BIT CMOS STATIC RAM View

8192 WORD X 8 BIT CMOS STATIC RAM

Part Name(s) : HM6167 HM6167P-8 HM6167P-6 HM6167LP-8 HM6167LP-6 Hitachi
Hitachi -> Renesas Electronics
Description : 16384-word x 1-bit HIGH SPEED CMOS STATIC RAM View

16384-word x 1-bit HIGH SPEED CMOS STATIC RAM

Part Name(s) : MSM5188 MSM5188-45 MSM5188-55 MSM5188-70 OKI
Oki Electric Industry
Description : 16,384-WORD x 4-BIT SPEED STATIC CMOS RAM View

16,384-WORD x 4-BIT SPEED STATIC CMOS RAM

Part Name(s) : CXK5816 CXK5816PN CXK5816PN/M-12 CXK5816PN/M-12L CXK5816PN/M-15 CXK5816PN_M-10 CXK5816PN_M-10L CXK5816PN_M-12 CXK5816PN_M-12L CXK5816PN_M-15 CXK5816PN_M-15L Sony
Sony Semiconductor
Description : 2048 word x 8 Bit HIGH SPEED CMOS STATIC RAM View

2048 word x 8 Bit HIGH SPEED CMOS STATIC RAM


Part Name(s) : HM62256BLFP-4SLT HM62256BLTM-4SL Hitachi
Hitachi -> Renesas Electronics
Description : 32,768-word 8-BIT HIGH SPEED CMOS STATIC RAM View

Description
The Hitachi HM62256B is a CMOS STATIC RAM organized 32-kword ×8-BIT. It realizes HIGHer performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. The device, packaged in 8 ×14 mm TSOP, 8 ×13.4 mm TSOP with thickness of 1.2 mm, 450-mil SOP (foot print pitch width), 600-mil plastic DIP, or 300-mil plastic DIP, is available for HIGH density mounting. It offers low power standby power dissipation; therefore, it is suitable for battery back-up systems.

Features
HIGH SPEED
  Fast access time: 45/55/70/85 ns (max)
• Low power
  Standby: 1.0 µW (typ)
  Operation: 25 mW (typ) (f = 1 MHz)
• Single 5 V supply
• Completely STATIC memory
  No clock or timing strobe required
• Equal access and cycle times
• Common data input and output
  Three state output
• Directly TTL compatible
  All inputs and outputs
• Capability of battery back up operation

Part Name(s) : IS61C64AL IS61C64AL-10JI IS61C64AL-10JLI IS61C64AL-10TI IS61C64AL-10TLI ISSI
Integrated Silicon Solution
Description : 8K x 8 HIGH-SPEED CMOS STATIC RAM View

The ISSI IS61C64AL is a very HIGH-SPEED, low power, 8192-WORD by 8-BIT STATIC RAM. It is fabricated using ISSI's HIGH-performance CMOS technology. This HIGHly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns with low power consumption.

Part Name(s) : CXK5T16100TM CXK5T16100TM- CXK5T16100TM-12LLX Sony
Sony Semiconductor
Description : 65536-word 16-bit HIGH SPEED CMOS STATIC RAM View

Description
The CXK5T16100TM is a general purpose HIGH SPEED CMOS STATIC RAM organized as 65536-words by 16-bits.
Special feature are low power consumption and HIGH SPEED. The CXK5T16100TM is a suitable RAM for portable equipment with battery back up.

Features
• Extended operating temperature range: –25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time: (Access time)
   3.0V operation 120ns (max.)
   3.3V operation 100ns (max.)
• Low power consumption operation:
         Standby / DC operation
      1.6µW (typ.) / 3.3mW (typ.)
   100µW (max.) / 11mW (max.)
• Fully STATIC memory ··· No clock or timing strobe required
• Equal access and cycle time
• Common data input and output: three state output
• Directly LVTTL compatible: All inputs and outputs
• Low voltage data retention: 2.0V (min.)
• 400mil 44pin TSOP (type II) package

 

Part Name(s) : M5M51008KR-55H Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-BIT which are fabricated using HIGH-performance quadruple-polysilicon and double metal CMOS
technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a HIGH density and low power STATIC RAM.
They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a HIGH reliability and HIGH density surface mount device(SMD). Two types of devices are available.
M5M51008DVP(normal lead bend type package), M5M51008DRV(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
   M5M51008DFP  ············ 32pin  525mil  SOP
   M5M51008DVP,RV ············ 32pin  8 X 20 mm2  TSOP
   M5M51008DKV  ············ 32pin  8 X 13.4 mm2  TSOP

APPLICATION
Small capacity memory units

Part Name(s) : M5M51008KV-55H M5M51008RV M5M51008VP Renesas
Renesas Electronics
Description : 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51008DP,FP,VP,RV,KV are a 1048576-bit CMOS STATIC RAM organized as 131072 word by 8-BIT which are fabricated using HIGH-performance quadruple-polysilicon and double metal CMOS
technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a HIGH density and low power STATIC RAM.
They are low standby current and low operation current and ideal for the battery back-up application. The M5M51008DVP,RV,KV are packaged in a 32-pin thin small outline package which is a HIGH reliability and HIGH density surface mount device(SMD). Two types of devices are available. M5M51008DVP(normal lead bend type package), M5M51008DRV(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
    M5M51008DFP  ············ 32pin  525mil  SOP
    M5M51008DVP,RV············ 32pin  8 X 20 mm2 TSOP
    M5M51008DKV  ············ 32pin  8 X 13.4 mm2  TSOP

APPLICATION
Small capacity memory units

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