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Part Name(s) : P70N02LT Niko
Niko Semiconductor
Description : 25V; 70A N-channel logic level enhancement mode field effect transistor View

25V; 70A N-channel logic level enhancement mode field effect transistor

PRODUCT SUMMARY
V(BR)DSS           RDS(ON)            ID
     25                      7mΩ                70A

Part Name(s) : MUR7005 MUR7010 MUR7020 MUR7040 MUR7060 NJSEMI
New Jersey Semiconductor
Description : 70A ULTRA FAST RECOVERY RECTIFIER View

70A ULTRA FAST RECOVERY RECTIFIER

Part Name(s) : G40N60B3 HGTG40N60B3 Fairchild
Fairchild Semiconductor
Description : 70A, 600V, UFS Series N-Channel IGBT View

70A, 600V, UFS Series N-Channel IGBT

The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the LOW on-state conduction loss of a bipolar transistor. The much LOWer on-state voltage drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where LOW conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49052.

Features
70A, 600V, TC= 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . .  100ns at TJ= 150oC
• Short Circuit Rating
LOW Conduction Loss

Part Name(s) : MP2363 MP2363DN MPS
Monolithic Power Systems
Description : 3A, 27V, 365KHz Step-Down Converter View

DESCRIPTION
The MP2363 is a non-synchronous step-down regulator with an integrated Power MOSFET. It achieves 3A continuous output current over a wide input supply range with excellent load and
line regulation.

FEATURES
• 3A Continuous Output Current, 4A Peak Output Current
•Programmable Soft-Start
•100mΩInternal Power MOSFET Switch
• Stable with LOW ESR Output Ceramic Capacitors
• Up to 95% Efficiency
• 20µA Shutdown Mode
• Fixed 365KHz frequency
•Thermal Shutdown
• Cycle-by-Cycle Over Current Protection
• Wide 4.75V to 27V Operating Input Range
• Output is Adjustable From 0.92V to 21V
• Under Voltage Lockout

APPLICATIONS
•Distributed Power Systems
•Battery Chargers
• Pre-Regulator for Linear Regulators


Part Name(s) : HGTG40N60B3 G40N60B3 Intersil
Intersil
Description : 70A, 600V, UFS Series N-Channel IGBT View

The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the LOW on-state conduction loss of a bipolar transistor. The much LOWer on-state voltage drop varies only moderately between 25°C and 150°C.

Features
70A, 600V, TC = 25°C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150°C
• Short Circuit Rating
LOW Conduction Loss

Part Name(s) : RFF70N06 Intersil
Intersil
Description : 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET View

The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49007.

Features
70A, 60V
• rDS(ON) = 0.014Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature

Part Name(s) : RFK70N06 Intersil
Intersil
Description : 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET View

The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49007.

Features
70A, 60V
• rDS(ON) = 0.014Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature

Part Name(s) : HGTG40N60B3 G40N60B3 Harris
Harris Semiconductor
Description : 70A, 600V, UFS Series N-Channel IGBT View

Description
The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the LOW on-state conduction loss of a bipolar transistor. The much LOWer on-state voltage drop varies only moderately between +25°C and +150°C.

Features
70A, 600V at TC = +25°C
• Square Switching SOA Capability
• Typical Fall Time - 160ns at +150°C
• Short Circuit Rating
LOW Conduction Loss

Part Name(s) : F1S70N06 RF1S70N06SM RFG70N06 RFP70N06 RFG70N069A RFP70N069A RF1S70N06SM9A Intersil
Intersil
Description : 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs View

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49007.

Features
70A, 60V
• rDS(on) = 0.014Ω
• Temperature Compensated PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve (Single Pulse)
• 175oC Operating Temperature
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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