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Part Name(s) : CXK5B18120TM CXK5B18120TM-12 CXK5B18120TM- Sony
Sony Semiconductor
Description : 65536-WORD 18-BIT HIGH SPEED Bi-CMOS STATIC RAM View

Description
CXK5B18120TM is a HIGH SPEED 1M bit BiCMOS STATIC RAM organized as 65536 words by 18 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in HIGH SPEED and low power applications.

Features
• Single 3.3V Supply 3.3V±0.3V
• Fast access time 12ns (Max.)
• Low stand-by current: 10mA (Max.)
• Low power operation 1116mW (Max.)
• Package line-up
    Dual Vcc/Vss
    CXK5B18120TM 400mil 44pin TSOP Package

Function
    65536-WORD × 18-BIT STATIC RAM

Part Name(s) : CXK5V16100TM CXK5V16100TM-85LLX CXK5V16100TM-10LLX Sony
Sony Semiconductor
Description : 65536-WORD X 16-bit HIGH SPEED CMOS STATIC RAM View

Description
CXK5V16100TM is a general purpose HIGH SPEED CMOS STATIC RAM organized as 65536-WORDs by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for HIGH SPEED and low power consumption applications where battery back up for nonvolatility is required.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time: (Access time)
    -85LLX 85ns (max.)
    -10LLX 100ns (max.)
• Low power consumption operation: Standby / DC operation 1.7µW (typ.) / 3.3mW (typ.)
• Single 3.3V supply: 3.3V±0.3V
• Fully STATIC memory: No clock or timing strobe required
• Equal access and cycle time
• Common data input and output: three state output
• Directly LVTTL compatible: All inputs and outputs
• Low voltage data retention: 2.0V (min.)
• 400mil 44pin TSOP (type II) package

Function
    65536-WORD × 16-bit STATIC RAM

Part Name(s) : CXK5V8512TM CXK5V8512TM- CXK5V8512TM-85LLX CXK5V8512TM-10LLX Sony
Sony Semiconductor
Description : 65536-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM View

Description
The CXK5V8512TM is a HIGH SPEED CMOS STATIC RAM organized as 65536-WORDs by 8-BITs.
A polysilicon TFT cell technology realized extremely low stand-by current and HIGHer data retention stability.
Operating on a single 3.3V supply, and special feature are low power consumption, HIGH SPEED.
The CXK5V8512TM is a suitable RAM for portable equipment with battery back up.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time:
                       (Access time)
             -85LLX 85ns (Max.)
           -10LLX 100ns (Max.)
• Low standby current: 14µA (Max.)
• Low data retention current: 12µA (Max.)
• Single 3.3V supply: 3.3V ± 0.3V
• Low voltage data retention: 2.0V (Min.)
• Package
    8mm × 20mm 32 pin TSOP package

Function
    65536-WORD × 8-BIT STATIC RAM

Part Name(s) : CXK5B16120J CXK5B16120J-12 CXK5B16120TM CXK5B16120TM-12 Sony
Sony Semiconductor
Description : 65536-WORD 16-bit HIGH SPEED Bi-CMOS STATIC RAM View

Description
CXK5B16120J/TM is a HIGH SPEED 1M bit BiCMOS STATIC RAM organized as 65536 words by 16 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in HIGH SPEED and low power applications.

Features
• Single 3.3V Supply 3.3V±0.3V
• Fast access time 12ns (Max.)
• Low stand-by current: 10mA (Max.)
• Low power operation 972mW (Max.)
• Package line-up
    Dual Vcc/Vss
    CXK5B16120J 400mil 44pin SOJ Package
    CXK5B16120TM 400mil 44pin TSOP Package

Function
    65536-WORD × 16-bit STATIC RAM


Part Name(s) : CXK58512M CXK58512TM CXK58512TM-10LL CXK58512TM-55LL CXK58512TM-70LL CXK58512M-70LL CXK58512M-10LL CXK58512M-55LL Sony
Sony Semiconductor
Description : 65536-WORD 8-BIT HIGH SPEED CMOS STATIC RAM View

Description
The CXK58512TM/M is a HIGH SPEED CMOS STATIC RAM organized as 65536-WORDs by 8 bits.
A polysilicon TFT cell technology realized extremely low stand-by current and HIGHer data retention stability.
Special feature are low power consumption, HIGH SPEED.
The CXK58512TM/M is a suitable RAM for portable equipment with battery back up.

Features
• Fast access time (Access time)
                       -55LL 55ns (Max.)
                       -70LL 70ns (Max.)
                     -10LL 100ns (Max.)
• Low standby current 10µA (Max.)
• Low data retention current 6µA (Max.)
• Single +5V supply: +5V ± 10%
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
    CXK58512TM 8mm × 20mm 32 pin TSOP package
    CXK58512M 525mil 32 pin SOP Package

Function
    65536-WORD × 8 bit STATIC RAM

Part Name(s) : M5M51016BRT M5M51016BRT-10VL M5M51016BRT-10VLL M5M51016BTP M5M51016BTP-10VL M5M51016BTP-10VLL Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS STATIC RAM organized as 65536 word by 16-bit which are fabricated using HIGHperformance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a HIGH density and low power STATIC RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a HIGH reliability and HIGH density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.3V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
    Small capacity memory units

Part Name(s) : CXK5T16100TM CXK5T16100TM- CXK5T16100TM-12LLX Sony
Sony Semiconductor
Description : 65536-WORD 16-bit HIGH SPEED CMOS STATIC RAM View

Description
The CXK5T16100TM is a general purpose HIGH SPEED CMOS STATIC RAM organized as 65536-WORDs by 16-bits.
Special feature are low power consumption and HIGH SPEED. The CXK5T16100TM is a suitable RAM for portable equipment with battery back up.

Features
• Extended operating temperature range: –25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time: (Access time)
   3.0V operation 120ns (max.)
   3.3V operation 100ns (max.)
• Low power consumption operation:
         Standby / DC operation
      1.6µW (typ.) / 3.3mW (typ.)
   100µW (max.) / 11mW (max.)
• Fully STATIC memory ··· No clock or timing strobe required
• Equal access and cycle time
• Common data input and output: three state output
• Directly LVTTL compatible: All inputs and outputs
• Low voltage data retention: 2.0V (min.)
• 400mil 44pin TSOP (type II) package

 

Part Name(s) : M5M51016BRT M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP M5M51016BTP-10VL-I M5M51016BTP-10VLL-I Mitsumi
Mitsumi
Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS STATIC RAM organized as 65536 word by 16-bit which are fabricated using HIGH-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a HIGH density and low power STATIC RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a HIGH reliability and HIGH density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.3V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
    Small capacity memory units

Part Name(s) : HM6167 HM6167P-8 HM6167P-6 HM6167LP-8 HM6167LP-6 Hitachi
Hitachi -> Renesas Electronics
Description : 16384-word x 1-bit HIGH SPEED CMOS STATIC RAM View

16384-word x 1-bit HIGH SPEED CMOS STATIC RAM

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