datasheetbank_Logo     Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Words :

Part Name(s) : CXK5V16100TM CXK5V16100TM-85LLX CXK5V16100TM-10LLX Sony
Sony Semiconductor
Description : 65536-WORD X 16-bit HIGH SPEED CMOS STATIC RAM View

Description
CXK5V16100TM is a general purpose HIGH SPEED CMOS STATIC RAM organized as 65536-WORDs by 16-bits. Operating on a single 3.3V supply, this asynchronous IC is suitable for HIGH SPEED and low power consumption applications where battery back up for nonvolatility is required.

Features
• Extended operating temperature range: –25 to +85°C
• Fast access time: (Access time)
    -85LLX 85ns (max.)
    -10LLX 100ns (max.)
• Low power consumption operation: Standby / DC operation 1.7µW (typ.) / 3.3mW (typ.)
• Single 3.3V supply: 3.3V±0.3V
• Fully STATIC memory: No clock or timing strobe required
• Equal access and cycle time
• Common data input and output: three state output
• Directly LVTTL compatible: All inputs and outputs
• Low voltage data retention: 2.0V (min.)
• 400mil 44pin TSOP (type II) package

Function
    65536-WORD × 16-bit STATIC RAM

Part Name(s) : M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP-10VL-I M5M51016BTP-10VLL-I Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS STATIC RAM organized as 65536 word by 16-bit which are fabricated using HIGH-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a HIGH density and low power STATIC RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a HIGH reliability and HIGH density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.3V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
    Small capacity memory units

Part Name(s) : M5M51016BRT M5M51016BRT-10VL M5M51016BRT-10VLL M5M51016BTP M5M51016BTP-10VL M5M51016BTP-10VLL Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS STATIC RAM organized as 65536 word by 16-bit which are fabricated using HIGHperformance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a HIGH density and low power STATIC RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a HIGH reliability and HIGH density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.3V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
    Small capacity memory units

Part Name(s) : CXK5T16100TM CXK5T16100TM- CXK5T16100TM-12LLX Sony
Sony Semiconductor
Description : 65536-WORD 16-bit HIGH SPEED CMOS STATIC RAM View

Description
The CXK5T16100TM is a general purpose HIGH SPEED CMOS STATIC RAM organized as 65536-WORDs by 16-bits.
Special feature are low power consumption and HIGH SPEED. The CXK5T16100TM is a suitable RAM for portable equipment with battery back up.

Features
• Extended operating temperature range: –25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time: (Access time)
   3.0V operation 120ns (max.)
   3.3V operation 100ns (max.)
• Low power consumption operation:
         Standby / DC operation
      1.6µW (typ.) / 3.3mW (typ.)
   100µW (max.) / 11mW (max.)
• Fully STATIC memory ··· No clock or timing strobe required
• Equal access and cycle time
• Common data input and output: three state output
• Directly LVTTL compatible: All inputs and outputs
• Low voltage data retention: 2.0V (min.)
• 400mil 44pin TSOP (type II) package

 


Part Name(s) : HM6167 HM6167P-8 HM6167P-6 HM6167LP-8 HM6167LP-6 Hitachi
Hitachi -> Renesas Electronics
Description : 16384-word x 1-bit HIGH SPEED CMOS STATIC RAM View

16384-word x 1-bit HIGH SPEED CMOS STATIC RAM

Part Name(s) : MSM5188 MSM5188-45 MSM5188-55 MSM5188-70 OKI
Oki Electric Industry
Description : 16,384-WORD x 4-BIT SPEED STATIC CMOS RAM View

16,384-WORD x 4-BIT SPEED STATIC CMOS RAM

Part Name(s) : M5M51016BVL-12VLL M5M51016BRT-12VL M5M51016BRT-12VLL M5M51016BTP-12VL M5M51016BTP-12VLL Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS STATIC RAM organized as 65536 word by 16-bit which are fabricated using HIGH-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a HIGH density and low power STATIC RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a HIGH reliability and HIGH density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.0V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
   M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)
  
APPLICATION
   Small capacity memory units

Part Name(s) : CXK5T8512TM CXK5T8512TM-10LLX CXK5T8512TM-12LLX CXK5T8512TN CXK5T8512TN-10LLX CXK5T8512TN-12LLX Sony
Sony Semiconductor
Description : 65536-WORD 8-BIT HIGH SPEED CMOS STATIC RAM View

Description
The CXK5T8512TM/TN is a HIGH SPEED CMOS STATIC RAM organized as 65536-WORDs by 8-BITs.
Special feature are low power consumption and HIGH SPEED.
The CXK5T8512TM/TN is a suitable RAM for portable equipment with battery back up.

Features
• Extended operating temperature range: –25 to +85°C
• Wide supply voltage range operation: 2.7 to 3.6V
• Fast access time: (Access time)
   3.0V operation
      CXK5T8512TM/TN-10LLX 100ns (Max.)
      CXK5T8512TM/TN-12LLX 120ns (Max.)
   3.3V operation
      CXK5T8512TM/TN-10LLX 85ns (Max.)
      CXK5T8512TM/TN-12LLX 100ns (Max.)
• Low standby current: 14µA (Max.)
• Low data retention current: 12µA (Max.)
• Low power data retention: 2.0V (Min.)
• Package line-up
   CXK5T8512TM
      8mm × 20mm 32 pin TSOP package
   CXK5T8512TN
      8mm × 13.4mm 32 pin TSOP package

 

Part Name(s) : CXK5816 CXK5816PN CXK5816PN/M-12 CXK5816PN/M-12L CXK5816PN/M-15 CXK5816PN_M-10 CXK5816PN_M-10L CXK5816PN_M-12 CXK5816PN_M-12L CXK5816PN_M-15 CXK5816PN_M-15L Sony
Sony Semiconductor
Description : 2048 word x 8 Bit HIGH SPEED CMOS STATIC RAM View

2048 word x 8 Bit HIGH SPEED CMOS STATIC RAM

1

2345678910 Next

All Rights Reserved © datasheetbank.com 2014 - 2019 [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]