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Part Name(s) : M5L2764K M5L2764K-2 Mitsumi
Mitsumi
Description : 65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM View

65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM

Part Name(s) : NMC27C64QE150 Fairchild
Fairchild Semiconductor
Description : 65,536-Bit (8192 x 8) CMOS EPROM View

General Description
The  NMC27C64  is  a  64K  UV  erasable,  electrically  reprogrammable and  one-time  programmable  (OTP)  CMOS  EPROM  ideally  suited for  applications  where  fast  turnaround,  pattern  experimentation and low power consumption are important requirements.

Features
High performance CMOS
—150 ns access time
JEDEC standard pin configuration
—28-pin Plastic DIP package
—28-pin CERDIP package
Drop-in replacement for 27C64 or 2764
Manufacturers identification code

Part Name(s) : NM27C64 Fairchild
Fairchild Semiconductor
Description : 65,536-Bit (8192 x 8) CMOS EPROM View

General Description
The  NMC27C64  is  a  64K  UV  erasable,  electrically  reprogrammable and  one-time  programmable  (OTP)  CMOS  EPROM  ideally  suited for  applications  where  fast  turnaround,  pattern  experimentation and low power consumption are important requirements.

Features
High performance CMOS
  —150 ns access time
JEDEC standard pin configuration
  —28-pin Plastic DIP package
  —28-pin CERDIP package
Drop-in replacement for 27C64 or 2764
Manufacturers identification code

 

Part Name(s) : NMC27C64 NMC27C64DWF NMC27C64N NMC27C64N150 NMC27C64N200 NMC27C64NE NMC27C64NE200 NMC27C64NE150 NMC27C64Q NMC27C64Q150 NMC27C64Q200 NMC27C64QE NMC27C64QE200 Fairchild
Fairchild Semiconductor
Description : 65,536-Bit (8192 x 8) CMOS EPROM View

General Description
The NMC27C64 is a 64K UV erasable, electrically reprogrammable and one-time programmable (OTP) CMOS EPROM ideally suited for applications where fast turnaround, pattern experimentation and low power consumption are important requirements.
The NMC27C64 is designed to operate with a single +5V power supply with ±10% tolerance. The CMOS design allows the part to operate over extended and military temperature ranges.

Features
■ High performance CMOS
    —150 ns access time
■ JEDEC standard pin configuration
    —28-pin Plastic DIP package
    —28-pin CERDIP package
■ Drop-in replacement for 27C64 or 2764
■ Manufacturers identification code


Part Name(s) : TC5564 TC5564AFL-15 TC5564AFL-20 TC5564APL-15 TC5564APL-20 Toshiba
Toshiba
Description : 8192 WORD X 8 BIT CMOS STATIC RAM View

8192 WORD X 8 BIT CMOS STATIC RAM

Part Name(s) : M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP-10VL-I M5M51016BTP-10VLL-I Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.3V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
    Small capacity memory units

Part Name(s) : CXK5B18120TM CXK5B18120TM-12 CXK5B18120TM- Sony
Sony Semiconductor
Description : 65536-word 18-bit High Speed Bi-CMOS Static RAM View

Description
CXK5B18120TM is a high speed 1M bit BiCMOS static RAM organized as 65536 words by 18 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications.

Features
• Single 3.3V Supply 3.3V±0.3V
• Fast access time 12ns (Max.)
• Low stand-by current: 10mA (Max.)
• Low power operation 1116mW (Max.)
• Package line-up
    Dual Vcc/Vss
    CXK5B18120TM 400mil 44pin TSOP Package

Function
    65536-word × 18-bit static RAM

Part Name(s) : M5M51016BRT M5M51016BRT-10VL M5M51016BRT-10VLL M5M51016BTP M5M51016BTP-10VL M5M51016BTP-10VLL Mitsubishi
MITSUBISHI ELECTRIC
Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using highperformance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.3V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
    Small capacity memory units

Part Name(s) : M5M51016BRT M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP M5M51016BTP-10VL-I M5M51016BTP-10VLL-I Mitsumi
Mitsumi
Description : 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM View

DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery result in a high density and low power static RAM.
They are low stand-by current and low operation current and ideal for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small outline package which is a high reliability and high density surface mount device (SMD). Two types of devices are available. M5M51016BTP(normal lead bend type package), M5M51016BRT (reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.

FEATURES
● Single +3.3V power supply
● Low stand-by current 0.3µA (typ.)
● Directly TTL compatible : All inputs and outputs
● Easy memory expansion and power down by CS, BC1 & BC2
● Data hold on +2V power supply
● Three-state outputs : OR-tie capability
● OE prevents data contention in the I/O bus
● Common data I/O
● Package
    M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)

APPLICATION
    Small capacity memory units

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