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Part Name(s) : FDS5680 Fairchild
Fairchild Semiconductor
Description : 60V N-Channel PowerTrench? MOSFET View

60V N-Channel PowerTrench™ MOSFET

Part Name(s) : FDB5686 FDP5686 Fairchild
Fairchild Semiconductor
Description : 60V N-Channel PowerTrench? MOSFET View

60V N-Channel PowerTrench™ MOSFET

Part Name(s) : FDP5680 FDB5680 Fairchild
Fairchild Semiconductor
Description : 60V N-Channel PowerTrench? MOSFET View

60V N-Channel PowerTrench™ MOSFET

Part Name(s) : FDD5690 FDD5690 FDS5670 Fairchild
Fairchild Semiconductor
Description : 60V N-Channel PowerTrench MOSFET View

60V N-Channel PowerTrench™ MOSFET


Part Name(s) : AO4611 SHENZHENFREESCALE
Unspecified
Description : 60V Dual P + N-Channel MOSFET View

General Description
The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features
N-Channel                   P-CHANNEL
VDS(V) = 60V                -60V
ID= 6.3A (VGS=10V)        -4.9A
RDS(ON)
< 25mΩ(VGS=10V)         < 42mΩ(VGS= -10V)
< 30mΩ(VGS=4.5V)        < 52mΩ(VGS= -4.5V)

Part Name(s) : B80NF06 P80NF06 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 W80NF06 ST-Microelectronics
STMicroelectronics
Description : N-channel 60V - 0.0065?- 80A TO-220/D PAK/TO- 247 STripFET II? Power MOSFET View

Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
Type                VDSS              RDS(on)         ID
STB80NF06        60V               <0.008Ω       80A
STP80NF06        60V               <0.008Ω       80A
STW80NF06       60V               <0.008Ω       80A
■ 100% avalanche tested
■ Low threshold drive

Applications
■ Switching application

Type                VDSS              RDS(on)         ID
STB80NF06        60V               <0.008Ω       80A
STP80NF06        60V               <0.008Ω       80A
STW80NF06       60V               <0.008Ω       80A

Part Name(s) : FQPF20N06L Fairchild
Fairchild Semiconductor
Description : N-Channel QFET MOSFET 60V, 17.2A, 42m? View

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications

Features
• 15.7A, 60V, RDS(on) = 0.055Ω @VGS = 10 V
• Low gate charge ( typical 9.5 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Part Name(s) : FDFS2P106A Fairchild
Fairchild Semiconductor
Description : Integrated 60V P-CHANNEL PowerTrench MOSFET and Schottky Diode View

General Description
The FDFS2P106A combines the exceptional performance of Fairchilds PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

Features
• –3.0 A, –60V RDS(ON) = 110 mΩ @ VGS = –10 V RDS(ON) = 140 mΩ @ VGS = –4.5 V
• VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility

Part Name(s) : AO4611 AO4611_10 AOSMD
Alpha and Omega Semiconductor
Description : 60V Dual P + N-Channel MOSFET View

General Description
The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Product Summary
N-Channel                P-CHANNEL
VDS(V) = 60V             -60V
ID = 6.3A (VGS=10V)   -4.9A
RDS(ON)                  
< 25mΩ(VGS=10V)     < 42mΩ(VGS= -10V)
< 30mΩ(VGS=4.5V)     < 52mΩ(VGS= -4.5V)
100% UIS Tested         100% UIS Tested
100% Rg Tested          100% Rg Tested

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