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Part Name(s) : AO4611
SHENZHENFREESCALE
Unspecified
Description : 60V Dual P + N-Channel MOSFET

General Description
The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features
N-Channel                   P-Channel
VDS(V) = 60V                -60V
ID= 6.3A (VGS=10V)        -4.9A
RDS(ON)
< 25mΩ(VGS=10V)         < 42mΩ(VGS= -10V)
< 30mΩ(VGS=4.5V)        < 52mΩ(VGS= -4.5V)

Part Name(s) : FDS5680
Fairchild
Fairchild Semiconductor
Description : 60V N-Channel PowerTrench™ MOSFET

60V N-Channel PowerTrench™ MOSFET

Part Name(s) : FDB5686 FDP5686
Fairchild
Fairchild Semiconductor
Description : 60V N-Channel PowerTrench™ MOSFET

60V N-Channel PowerTrench™ MOSFET

Part Name(s) : FDP5680 FDB5680
Fairchild
Fairchild Semiconductor
Description : 60V N-Channel PowerTrench™ MOSFET

60V N-Channel PowerTrench™ MOSFET

Part Name(s) : AO4611 AO4611_10
AOSMD
Alpha and Omega Semiconductor
Description : 60V Dual P + N-Channel MOSFET

General Description
The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Product Summary
N-Channel                P-Channel
VDS(V) = 60V             -60V
ID = 6.3A (VGS=10V)   -4.9A
RDS(ON)                  
< 25mΩ(VGS=10V)     < 42mΩ(VGS= -10V)
< 30mΩ(VGS=4.5V)     < 52mΩ(VGS= -4.5V)
100% UIS Tested         100% UIS Tested
100% Rg Tested          100% Rg Tested

Part Name(s) : FDD5614 FDD5614P
Fairchild
Fairchild Semiconductor
Description : 60V P-Channel PowerTrench® MOSFET

General Description
This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. Applications

Features
• –15 A, –60 V.  RDS(ON)= 100 mΩ@ VGS= –10 V
                     RDS(ON)= 130 mΩ@ VGS= –4.5 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability

Part Name(s) : FDFS2P106A
Fairchild
Fairchild Semiconductor
Description : Integrated 60V P-Channel PowerTrench® MOSFET and Schottky Diode

General Description
The FDFS2P106A combines the exceptional performance of Fairchilds PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

Features
• –3.0 A, –60V RDS(ON) = 110 mΩ @ VGS = –10 V RDS(ON) = 140 mΩ @ VGS = –4.5 V
• VF < 0.45 V @ 1 A (TJ = 125°C) VF < 0.53 V @ 1 A VF < 0.62 V @ 2 A
• Schottky and MOSFET incorporated into single power surface mount SO-8 package
• Electrically independent Schottky and MOSFET pinout for design flexibility

Part Name(s) : FDC5614 FDC5614P
Fairchild
Fairchild Semiconductor
Description : 60V P-Channel Logic Level PowerTrench MOSFET

General Description
This 60V P-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications.

Features
• –3 A, –60 V. RDS(ON) = 0.105 Ω @ VGS = –10 V
                   RDS(ON) = 0.135 Ω @ VGS = –4.5 V
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)

Applications
• DC-DC converters
• Load switch
• Power management

 

Part Name(s) : RFG60P06E
Intersil
Intersil
Description : 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET

The RFG60P06E P-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
The RFG60P06E incorporates ESD protection and is designed to withstand 2kV (Human Body Model) of ESD.

Features
• 60A, 60V
• rDS(ON) = 0.030Ω
• Temperature Compensating PSPICE® Model
• 2kV ESD Rated
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature
• Related Literature

Fairchild
Fairchild Semiconductor
Description : 60V N-Channel PowerTrench® MOSFET

60V N-Channel PowerTrench™ MOSFET

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