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Part Name(s) : AOT1606L AOB1606L AOSMD
Alpha and Omega Semiconductor
Description : 60V N-CHANNEL RUGGED PLANAR MOSFET View

General Description
The AOT1606L/AOB1606L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.

Product Summary
    VDS                                        60V
    ID (at VGS=10V)                    178A
    RDS(ON) (at VGS=10V)         < 6.3mΩ

    100% UIS Tested
    100% Rg Tested

Part Name(s) : FQP50N06 THINKISEMI
Thinki Semiconductor Co., Ltd.
Description : 50A,60V Heatsink PLANAR N-CHANNEL Power MOSFET View

General Description
This N-CHANNEL enhancement mode field-effect power transistor using THINKI Semiconductor advanced PLANAR stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high RUGGED avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application.

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Part Name(s) : FQP65N06 THINKISEMI
Thinki Semiconductor Co., Ltd.
Description : 65A,60V Heatsink PLANAR N-CHANNEL Power MOSFET View

General Description
This N-CHANNEL enhancement mode field-effect power transistor using THINKI Semiconductor advanced PLANAR stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high RUGGED avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application.

Features
• 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Part Name(s) : 50N06 GFP50N06 THINKISEMI
Thinki Semiconductor Co., Ltd.
Description : 50A,60V Heatsink PLANAR N-CHANNEL Power MOSFET View

General Description
This N-CHANNEL enhancement mode field-effect power transistor using THINKI Semiconductor advanced PLANAR stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high RUGGED avalanche characteristics. The TO-220M-SQ pkg is well suited for adaptor power units,amplifiers,inverters and SMPS application.

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating


Part Name(s) : FDB5686 FDP5686 Fairchild
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench? MOSFET View

60V N-CHANNEL PowerTrench™ MOSFET

Part Name(s) : FDP5680 FDB5680 Fairchild
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench? MOSFET View

60V N-CHANNEL PowerTrench™ MOSFET

Part Name(s) : FDD5690 FDD5690 FDS5670 Fairchild
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench MOSFET View

60V N-CHANNEL PowerTrench™ MOSFET

Part Name(s) : S4C3F60L STS4C3F60L ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.045 ? - 4A SO-8 P-CHANNEL 60V - 0.100 ? - 3A SO-8 StripFET? MOSFET View

DESCRIPTION
This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, RUGGED avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

General Features
■ TYPICAL RDS(on) (N-CHANNEL) = 0.045 Ω
■ TYPICAL RDS(on) (P-Channel) = 0.100 Ω
■ STANDARD OUTLINE FOR EASY
  AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE

APPLICATIONS
■ DC/DC CONVERTERS
■ BACK LIGHT INVERTER FOR LCD

 

Part Name(s) : B80NF06 P80NF06 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 W80NF06 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 60V - 0.0065?- 80A TO-220/D PAK/TO- 247 STripFET II? Power MOSFET View

Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, RUGGED avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
Type                VDSS              RDS(on)         ID
STB80NF06        60V               <0.008Ω       80A
STP80NF06        60V               <0.008Ω       80A
STW80NF06       60V               <0.008Ω       80A
■ 100% avalanche tested
■ Low threshold drive

Applications
■ Switching application

Type                VDSS              RDS(on)         ID
STB80NF06        60V               <0.008Ω       80A
STP80NF06        60V               <0.008Ω       80A
STW80NF06       60V               <0.008Ω       80A

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