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Part Name(s) : AOT1608L AOB1608L
AOSMD
Alpha and Omega Semiconductor
Description : 60V N-Channel Rugged Planar MOSFET

General Description
The AOT1608L/AOB1608L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.

Product Summary
    VDS                                    60V
    ID (at VGS=10V)                140A
    RDS(ON) (at VGS=10V) < 7.6mΩ

    100% UIS Tested
    100% Rg Tested

Part Name(s) : AOT1606L AOB1606L
AOSMD
Alpha and Omega Semiconductor
Description : 60V N-Channel Rugged Planar MOSFET

General Description
The AOT1606L/AOB1606L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.

Product Summary
    VDS                                        60V
    ID (at VGS=10V)                    178A
    RDS(ON) (at VGS=10V)         < 6.3mΩ

    100% UIS Tested
    100% Rg Tested

Part Name(s) : FQP50N06
THINKISEMI
Thinki Semiconductor Co., Ltd.
Description : 50A,60V Heatsink Planar N-Channel Power MOSFET

General Description
This N-Channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced Planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high Rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application.

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Part Name(s) : FQP65N06
THINKISEMI
Thinki Semiconductor Co., Ltd.
Description : 65A,60V Heatsink Planar N-Channel Power MOSFET

General Description
This N-Channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced Planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high Rugged avalanche characteristics. The TO-220M pkg is well suited for adaptor power unit and small power inverter application.

Features
• 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 100 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Part Name(s) : CEP50N06
THINKISEMI
Thinki Semiconductor Co., Ltd.
Description : 50A,60V Heatsink Planar N-Channel Power MOSFET

General Description
This N-Channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced Planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high Rugged avalanche characteristics. The TO-220M-SQ pkg is well suited for adaptor power units,amplifiers,inverters and SMPS application.

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Part Name(s) : FDS5680
Fairchild
Fairchild Semiconductor
Description : 60V N-Channel PowerTrench™ MOSFET

60V N-Channel PowerTrench™ MOSFET

Part Name(s) : CEP50N06
ETC
Unspecified
Description : 50A,60V Heatsink Planar N-Channel Power MOSFET

[Thinki Semiconductor Co., Ltd.]

General Description
This N-Channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced Planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high Rugged avalanche characteristics. The TO-220M-SQ pkg is well suited for adaptor power units,amplifiers,inverters and SMPS application.

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Part Name(s) : 50N06 GFP50N06
THINKISEMI
Thinki Semiconductor Co., Ltd.
Description : 50A,60V Heatsink Planar N-Channel Power MOSFET

General Description
This N-Channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced Planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high Rugged avalanche characteristics. The TO-220M-SQ pkg is well suited for adaptor power units,amplifiers,inverters and SMPS application.

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Part Name(s) : PHP50N06 PHP50N06T
THINKISEMI
Thinki Semiconductor Co., Ltd.
Description : 50A,60V Heatsink Planar N-Channel Power MOSFET

General Description
This N-Channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced Planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) and high Rugged avalanche characteristics. The TO-220M-SQ pkg is well suited for adaptor power units,amplifiers,inverters and SMPS application.

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Part Name(s) : FDB5686 FDP5686
Fairchild
Fairchild Semiconductor
Description : 60V N-Channel PowerTrench™ MOSFET

60V N-Channel PowerTrench™ MOSFET

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