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Part Name(s) : FDS5680 Fairchild
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench? MOSFET View

60V N-CHANNEL PowerTrench™ MOSFET

Part Name(s) : FDB5686 FDP5686 Fairchild
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench? MOSFET View

60V N-CHANNEL PowerTrench™ MOSFET

Part Name(s) : FDP5680 FDB5680 Fairchild
Fairchild Semiconductor
Description : 60V N-CHANNEL PowerTrench? MOSFET View

60V N-CHANNEL PowerTrench™ MOSFET

Part Name(s) : AO4611 SHENZHENFREESCALE
Unspecified
Description : 60V DUAL P + N-CHANNEL MOSFET View

General Description
The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Features
N-CHANNEL                   P-Channel
VDS(V) = 60V                -60V
ID= 6.3A (VGS=10V)        -4.9A
RDS(ON)
< 25mΩ(VGS=10V)         < 42mΩ(VGS= -10V)
< 30mΩ(VGS=4.5V)        < 52mΩ(VGS= -4.5V)


Part Name(s) : RF1K4915496 RF1K49154 Intersil
Intersil
Description : 2A, 60V, 0.130 Ohm, DUAL N-CHANNEL, LittleFET? Power MOSFET View

This DUAL N-CHANNEL power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. These devices can be operated directly from integrated circuits.

Features
• 2A, 60V
• rDS(ON) = 0.130Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Part Name(s) : RF1K49154 RF1K4915496 Fairchild
Fairchild Semiconductor
Description : 2A, 60V, 0.130 Ohm, DUAL N-CHANNEL, LittleFET? Power MOSFET View

This DUAL N-CHANNEL power MOSFET is manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. These devices can be operated directly from integrated circuits.

Features
• 2A, 60V
• rDS(ON) = 0.130Ω
• Temperature Compensating PSPICE® Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Part Name(s) : AO4611 AO4611_10 AOSMD
Alpha and Omega Semiconductor
Description : 60V DUAL P + N-CHANNEL MOSFET View

General Description
The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Product Summary
N-CHANNEL                P-Channel
VDS(V) = 60V             -60V
ID = 6.3A (VGS=10V)   -4.9A
RDS(ON)                  
< 25mΩ(VGS=10V)     < 42mΩ(VGS= -10V)
< 30mΩ(VGS=4.5V)     < 52mΩ(VGS= -4.5V)
100% UIS Tested         100% UIS Tested
100% Rg Tested          100% Rg Tested

Part Name(s) : RF1K49221 RF1K4922196 Intersil
Intersil
Description : 2.5A, 60V, 0.130 Ohm, ESD Rated, DUAL N-CHANNEL LittleFET? Power MOSFET View

The RF1K49221 DUAL N-CHANNEL power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from integrated circuits.

Features
• 2.5A, 60V
• rDS(ON) = 0.130Ω
• 2kV ESD Protected
• Temperature Compensating PSPICE® Model
• Thermal Impedance PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Part Name(s) : RF1K49221 RF1K4922196 RF1K49221 RF1K4922196 Fairchild
Fairchild Semiconductor
Description : 2.5A, 60V, 0.130 Ohm, ESD Rated, DUAL N-CHANNEL LittleFET? Power MOSFET View

The RF1K49221 DUAL N-CHANNEL power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from integrated circuits.

Features
• 2.5A, 60V
• rDS(ON) = 0.130Ω
• 2kV ESD Protected
• Temperature Compensating PSPICE® Model
• Thermal Impedance PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

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