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Part Name(s) : 30N6S2D FGB30N6S2D FGH30N6S2D FGP30N6S2D FGB30N6S2DT Fairchild
Fairchild Semiconductor
Description : 600V, SMPS II SERIES N-CHANNEL IGBT with ANTI-PARALLEL STEALTH™ Diode

General Description
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive.

Features
• 100kHz Operation at 390V, 14A
• 200kHZ Operation at 390V, 9A
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125°C
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss

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Part Name(s) : 20N6S2D FGB20N6S2 FGB20N6S2D FGB20N6S2DT FGH20N6S2 FGH20N6S2D FGP20N6S2 FGP20N6S2D Fairchild
Fairchild Semiconductor
Description : 600V, SMPS II SERIES N-CHANNEL ANTI-PARALLEL STEALTH

General Description
The FGH20N6S2D FGP20N6S2D, FGB20N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and high avalanche capability (UIS).
These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits

Features
• 100kHz Operation at 390V, 7A
• 200kHZ Operation at 390V, 5A
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 30nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ
• Low Conduction Loss
• Low Eon
• Soft Recovery Diode

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Part Name(s) : FGH40N6S2D Fairchild
Fairchild Semiconductor
Description : 600V, SMPS II SERIES N-CHANNEL IGBT with ANTI-PARALLEL STEALTHTM Diode

General Description
The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:

• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies
• Zero voltage and zero current switching circuits

Features
• 100kHz Operation at 390V, 24A
• 200kHZ Operation at 390V, 18A
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125℃
• Low Gate Charge . . . . . . . . . 35nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ
• Low Conduction Loss

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Part Name(s) : HGT5A40N60A4D 40N60A4D Intersil
Intersil
Description : 600V, SMPS SERIES N-CHANNEL IGBT with ANTI-PARALLEL Hyperfast Diode

The HGT5A40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49347. The diode used in ANTI-PARALLEL is the development type 49374.

Features
• 100kHz Operation at 390V, 40A
• 200kHz Operation at 390V, 20A
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at TJ = 125°
• Low Conduction Loss

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Part Name(s) : HGT4E30N60B3DS HGTG30N60B3D G30N60B3D G30N60B3D HGTG30N60B3D HGTG30N60B3D.. Fairchild
Fairchild Semiconductor
Description : 60A, 600V, UFS SERIES N-CHANNEL IGBT with ANTI-PARALLEL Hyperfast Diode

60A, 600V, UFS SERIES N-CHANNEL IGBT
with ANTI-PARALLEL Hyperfast Diode

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

Features
• 60A, 600V, TC= 25°C
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ= 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast ANTI-PARALLEL Diode

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Part Name(s) : 20N60A4D HGTG20N60A4D Fairchild
Fairchild Semiconductor
Description : 600V, SMPS SERIES N-CHANNEL IGBT with ANTI-PARALLEL Hyperfast Diode

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in ANTI-PARALLEL is the development type TA49372.

Features
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 55ns at TJ = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model

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Part Name(s) : HGTG20N60A4D 20N60A4D Intersil
Intersil
Description : 600V, SMPS SERIES N-CHANNEL IGBT with ANTI-PARALLEL Hyperfast Diode

The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in ANTI-PARALLEL is the development type TA49372.

Features
• >100kHz Operation At 390V, 20A
• 200kHz Operation At 390V, 12A
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.intersil.com

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Part Name(s) : G30N60A4D Fairchild
Fairchild Semiconductor
Description : 600V, SMPS SERIES N-CHANNEL IGBT with ANTI-PARALLEL Hyperfast Diode

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in ANTI-PARALLEL is the development type TA49373.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Features
• >100kHz Operation At 390V, 30A
• 200kHz Operation At 390V, 18A
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.fairchildsemi.com

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Part Name(s) : 30N60A4D HGTG30N60A4D Fairchild
Fairchild Semiconductor
Description : 600V, SMPS SERIES N-CHANNEL IGBT with ANTI-PARALLEL Hyperfast Diode

The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode
used in ANTI-PARALLEL is the development type TA49373.

Features
• >100kHz Operation At 390V, 30A
• 200kHz Operation At 390V, 18A
600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . .  60ns at TJ= 125°C
• Low Conduction Loss
• Temperature Compensating SABER™ Model www.fairchildsemi.com

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Part Name(s) : HGTG30N60B3D G30N60B3D Intersil
Intersil
Description : 60A, 600V, UFS SERIES N-CHANNEL IGBT with ANTI-PARALLEL Hyperfast Diode

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in ANTI-PARALLEL with the IGBT is the development type TA49053.

Features
• 60A, 600V, TC = 25°C
600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast ANTI-PARALLEL Diode

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